1.

Generation of electron hole pairs due to thermal energy is called……… [ ]

(a). Thermal generation (b). Thermal effect ( c). Energy band (d). piezo effect

2. Zener diode is usually operated in [ ]

(a) Forward bias mode (b) reverse bias mode

(c) Near cut in voltage (d) forward linear region

3. Which of the following diode is used as voltage stabilization? [ ]

(a) PN- junction (b).Tunnel (c) Zener (d) varactor

4. The depletion region in a PN diode is due to [ ]

(a) Reverse biasing (b). Forward biasing

c) An area created by crystal doping (d).an area void of current biased

5. A rectifier is used to [ ]

(a) Convert a.c voltage to d.c voltage (b) convert d.c voltage to a.c voltage

(c) both a and b (d) convert voltage to current

6. The efficiency of a half wave rectifier is [ ]

(a) 40.6% (b) 81.2% (c) 1.12% (d) 48.2%

7. The bridge rectifier requires [ ]

(a) 2 diodes (b) 3 diodes (c) 4 diodes (d) 8 diodes

8. An FET has a [ ]

(a). very high input resistance (b) very low input resistance

(c). High connection emitter junction (d). Forward based PN junction

9. A depletion MOSFET differs from a JFET in the sense that it has no [ ]

(a) Channel (b) gate (c) PN-junction (d) substrate

10. For the operation of enhancement of a N-channel MOSFET , the gate voltage
 will be [ ]

(a) High positive (b) High negative (c) low positive (d) zero

11. A pnp transistor is made of [ ]

(a) silicon (b) germanium (c) either silicon or germanium (d) none

12. In a transistor, the region is very lightly doped and very thin is the [ ]

(a) Emitter (b) base (c) collector (d) none

13. An oscillator uses [ ]

(a) positive feedback (b) negative feedback (c ) both (d) none

14. For a stable oscillator, Barkhausen criterion is [ ]

a) Aß=0 b) Aß=1 c) -Aß=1 d) none

15. A phase shift oscillator circuit consists of [ ]

a) R and C components b) R and L components

c) Land C components d) R , L and C components

16. The phase shift of each R C network of an RC phase shift oscillator is [ ]

a) 60 o b) 90o c) 180 o d) 360o

17. An oscillator using LC tuned circuit has L=58.6µH and C=300pF.The frequency of

Oscillations will be nearly [ ]

a) 12KHZ (b) 120 KHZ (c) 1200KHZ (d) 12 MHZ

18. In a full wave rectifier the diodes conduct for [ ]

(a) One half cycle (b) full cycle (c ) alternate half cycle (d ) none

19. The primary function of a rectifier filter is to [ ]

(a) Suppress old harmonics (b) remove ripples (c) stabilize the output d.c level

(d) Minimize the input a.c variations

20. The peak inverse voltage of a full wave rectifier is [ ]

(a) Vm (b) 2Vm (c )Vm/2 (d) 3Vm

21. IGBT has tree terminals called

(a) Collector, emitter and base

(b) Drain, source and gate

(c) drain, source and gate

(d) Collector, emitter and gates

22. In “p” type material, minority carriers would be

(a) slower (b) holes (c ) electrons (d) dopants

23. A commonly used pentavalent material is:

A) arsenic B) boron C) gallium D) neon

24. Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how
many volts?

A) 0.2 B) 0.3 C) 0.7 D) 0.8

25. Ionization within a P-N junction causes a layer on each side of the barrier called the:

A) Junction B) depletion region C) barrier voltage D) forward voltage

26. When an electron jumps from the valence shell to the conduction band, it leaves a gap. What
is this gap called?

A) energy gap B) hole C) electron-hole pairD) Recombination

27. A differential amplifier amplifies the ---------- between two input signals.

a) addition b) subtraction c) multiplication (d) none

28. When a differential amplifier is operated single-ended, …………

(a)the output is grounded (b)one input is grounded and signal is applied to the other
(c )both inputs are connected together (d)the output is not inverted
29. The Op-amp can amplify
(a)a.c. signals only
(a) d.c. signals only
(b) both a.c. and d.c. signals
(c) neither d.c. nor a.c. signals
30. Current cannot flow to ground through …….
(d) a mechanical ground
(e) an a.c. ground
(f) a virtual ground
(g) an ordinary ground
31. A JFET is also called …………… transistor
(a)unipolar
(b)bipolar
(c ) unijunction
(d)none of the above
32 A JFET is a ………… driven device
(a)current
(b)voltage
(c )both current and voltage
(d)none of the above
33.In a p-channel JFET, the charge carriers are …………..
(a)electrons
(b) holes
(c) both electrons and holes
(d) none of the above
34 A MOSFET has …………… terminals
(a) two
(b) five
(c )four
(d)three
35. A MOSFET can be operated with ……………..
(a) Negative gate voltage only
(b) Positive gate voltage only
(c ) positive as well as negative gate voltage
(d) None of the above
36. In a FET, there are ……….. pn junctions at the sides
(a)three
(b)four
(c) five
(d) Two

37. A MOSFET differs from a JFET mainly because ………………

(a)of power rating
(b)the MOSFET has two gates
(c)the JFET has a pn junction
(d)none of the above
38. In a common-source JFET amplifier, the output voltage is …………………
(a)180o out of phase with the input
(b)in phase with the input
(c) )90o out of phase with the input
(d)taken at the sum
39. Which of the following devices has the highest input impedance?
(a)JFET
(b)MOSFET
(c )Crystal diode
(d)ordinary transisor

40.In an LC transistor oscillator, the active device is ……………

(a)LC tank circuit
(b)Biasing circuit
(c ) Transistor
(d)None of the above