Ch-8 Analog MCQ and MSQ

ANALOG MCQ AND MSQ |1
Chapter-8 Analog MCQ and MSQ

8
MULTIPLE CHOICE TYPE QUESTION
8.1.1. The three terminals of a FET are
(a) Emitter, base, collector (b) Source, drain, gate
(c) Source, base, drain (d) Cathode, drain, gate
Ans: (b)
8.1.2. JFET is a
(a) Current controlled device (b) Voltage controlled device
(c) Temperature controlled device (d) None of this
Ans: (b)
8.1.3. The input impedance of a JFET is
(a) Same as BJT (b) More than BJT, less than MOSFET
(c) Less than BJT, More than MOSFET (d) Less than BTT and MOSFET
Ans: (b)
8.1.4. Which of these is a unipolar device?
(a) BJT (b) FET (c) Zener diode (d) NOT
Ans: (b)
8.1.5. A FET is mainly used as
(a) Current amplifier (b) Voltage amplifier (c) Power amplifier (d) Switch
Ans: (b)
8.1.6. FET is less noisy than BJT be cause of
(a) High input impedance (b) Low output impedance
(c) Voltae controlled current (d) Current only due to majority carriers
Ans: (d)
8.1.8. MOSFET can operate in
(c) Both depletion and enhancement mode for -channel only.

(a) Deplition mode (b) Enhancement mode
(d) Both deplition and enhancement mode for -channel and -channel.
An ideal voltage-controlled voltage source has the value of and tend to.
Ans: (d)
(a) 0, 0 (b) ∞, 0 (c) 0, ∞ (d) ∞, ∞

8.1.9.
Ans: (b)
8.1.10. Which of the following is not true for JFET?
(a) It is a current-controlled device (b) It is a majority carrier device
(c) Drain and source are inter changeable in JFET (d) It can be used as a voltage-variable resistor.
Ans: (a)
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8.1.11. When the gate-to-source voltage

of -channel JFET is made more negative, then the
drain current.
(a) Increases (b) Decreases (c) Remains constant (d) May decrease or increase
Ans: (b)
8.1.12. MOSFET is a
(a) Current controlled device (b) Voltage controlled device
(c) Temperature controlled device (d) None of these
In a -channel MOSFET the drain current is due to flow of

Ans: (b)
8.1.13.
(a) Electrons (b) Holes
(c) Negatively charged ions (d) Positively charged ions
Ans: (b)
8.1.14. Above pinch-off voltage in a JFET
(a) Drain current increased sharply (b) Drain current decreases
(c) Drain current remains almost constant (d) Drain current becomes zero
Ans: (c)
(a) - junction

8.1.15. The drain current in a JFET is controlled by the electric field of the
(b) Capacitor (c) Drain bias (d) Gate bias.
Ans: (a)
(c) - junction

8.1.16. The drain current in a MOSFET is controlled by the electric field of
(a) Capacitor (b) Drain bias (d) Gate bias
Ans: (a)
(a) with constant (b) with constant

8.1.17. The transfer characteristics of a JFET are the plots of
(c) with different (d) with different

Ans: (b)
(a) > 1 (b) < 1 (c) < 10

8.1.18. Input impedance of a JFET is
(d) 3 to 100k
8.1.19. The gate voltage of an enhancement mode -channel MOSFET is

Ans: (a)
Ans: Positive (b) Negative

(c) Zero with respect to drain (d) Zero with respect to source
The threshold voltages of -channel MOSFET is

Ans: (b)
8.1.20.
(a) Positive (b) Negative (c) Zero (d) None of these
For small values of , JFET behaves like

Ans: (a)
8.1.21.
(a) Resistor (b) Constant current source
(c) Constant voltage source (d) diode
Ans: (a)
8.1.22. The gate source diode of a JFET should be

(a) Forward biased (b) Reversed biased
(c) Either forward or Reverse (d) None of these
Ans: (b)
8.1.23. The depletion mode MOSFET acts mostly as a
(a) JFET (b) Current source
(c) Resistor (d) Enhancement mode MOSFET
Ans: (a)
8.1.24. When a JFET is cut off, the depletion layers are
(a) Far apart (b) Close together
(c) Touching each other (d) Conducting
Ans: (b)
(b) - junction

8.1.25. The channel current in a JFET is controlled by the electric field of the
(a) Capacitor (c) Drain bias (d) Gate bias
Ans: (b)
(a) - junction

8.1.26. Depletion MOSFET and JFET have the similarity that both have
(b) Channel (c) Capacitance (d) Insulator
A forward biased - junction has a resistance about

Ans: (b)
(a) 10 − 20 (b) 10 − 20 (c) 10 − 20

8.1.27.
(d) None of these
The depletion region of a - junction consists

Ans: (a)
8.1.28.
(a) Acceptor ions (b) Holes and electrons (c) Donor ions (d) Both (a) and (c)
The barrier height at a - junction of germenium is about

Ans: (d)
(a) 3 (b) 3.5 (c) 0 (d) 0.3

8.1.29.
With the forward bias to a junction the width of the depletion region.
Ans: (d)
8.1.30.
(a) Increases (b) Decreases (c) Remains same (d) Can not say
A small reverse bias junction has –

Ans: (b)
8.1.31.
(a) a large current flow (b) Very low resistance
(c) Almost negligible current (d) Very narrow depletion layer
8.1.32. A - junction acts as a

Ans: (c)
(a) Unidirectional switch (b) Bidirectional switch

(c) Controlled switch (d) None of these
Ans: (a)
8.1.33. Which of the following parameters depends on doping concentration to a semiconductor?
(a) Electron affinity (b) Work function (c) Energy band gap (d) None of these
Ans: (b)
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8.1.34. The leakage current across - junction is due to ____________

(a) Minority carrier (b) Majority carriers
(c) Junction capacitance (d) None of these
Resistance in a reverse biased - junction is about _______________

Ans: (a)
(a) 10 − 20 (b) 10 − 20 (c) 10 − 20

8.1.35.
(d) None of these
The leakage current in a real - junction is in order of _______________

Ans: (c)
(b) Few %& (c) Few &

8.1.36.
(a) Few Amϕ (d) None of these
Ans: (c)
(a) One - junction (b) Two - junction (c) 3 - junctions
8.1.37. A crystal diode has _____________.
(d) None of these
Ans: (a)
(a) 2.4 (b) 3 (c) 3.1 (d) 0.7

8.1.38. The built in potential of a silicon diode is about
A - junction diode is
Ans: (d)
8.1.39.
(a) An oscillator (b) An amplifier (c) A rectifier (d) A regulator (Voltage)
An ideal - junction diode when forward biased be haves as a perfect.

Ans: (c)
8.1.40.
(a) Conductor (b) Insulator (c) Resistance (d) None of these
Ans: (a)
8.1.41. If the temperature of a crystal diode increases then the leakage current ___________ .
(a) Decreases (b) Increases (c) Becomes zero (d) Remains the same
Ans: (b)
8.1.42. The doping level of crystal diode is approximately equal to __________ .
(a) Remains the same (b) Is decreased (c) Is increased (d) None of these
Ans: (b)
8.1.43. The knee voltage of a crystal diode is approximately equal to.
(a) Applied voltage (b) Barrier potential (c) Forward voltage (d) Breakdown voltage
A - Junction diode is __________ type of device.

Ans: (b)
8.1.44.
(a) Non-linear (b) Linear (c) Bilateral (d) None of these
Ans: (a)
8.1.45. If the doping level in a crystal diode is increased the width of depletion layer is
(a) Constant (b) Increased (c) Decreased (d) None of these
A zener diode has __________ - junction.

Ans: (c)
8.1.46.
(a) One (b) Two (c) Three (d) None of these
Ans: (a)
8.1.47. Zener diode is used as

(a) Oscillator (b) Voltage regulator (c) Amplifier (d) Rectifier
Ans: (b)
8.1.48. A zener diode is always ____________ biased.
(a) Reverse (b) Forward (c) Either forward or reverse (d) None of these
Ans: (a)
8.1.49. The doping level in a zener diode is
(a) High (b) Low (c) Moderate (d) Either High or Low
Ans: (a)
8.1.50. In the breakdown region, a zener behaves like a ____________ .
(a) Constant voltage source (b) Constant current source
(c) Current resistance (d) Variable resistance
Ans: (a)
8.1.51. A zener diode is ________ device.
(a) Non-linear (b) Linear (c) Amplifying (d) Rectifying
Ans: (a)
8.1.52. The breakdown voltage of zener depends on
(a) Applied voltage (b) Diode material (c) Temperature (d) None of these
The depletion layer width of a - diode is about

Ans: (b)
(a) 0.5)% (b) 0.5%% (c) 0.5% (d) 0.5%

8.1.53.
Ans: (c)
8.1.54. Which type of carriers is responsible for reverse saturation current in diode.
(a) Minority carriers (b) Majority carriers (c) Both majority and minority (d) None of these
Ans: (a)
8.1.55. If the load resistance decreases in a zener regulator, the series current __________
(a) Decreases (b) Stays the same (c) Increase
(d) Equal to the voltage divided by the series resistance
Ans: (b)
8.1.56. Switching time is less in Schottky diode because of __________.
(a) Less majority carriers (b) More minority carriers
(c) Less storage charge (d) Low doping concentration
Ans: (c)
8.1.57. For frequency generation (oscillator) ________ device is used
(a) Solar cell (b) Tunnel diode (c) LED (d) Schottky diode
Ans: (b)
(c) Ordinary - diode(d) Photo diode

8.1.58. For power generation ____________ is used.
(a) Solar cell (b) Varactor diode
Ans: (a)
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8.1.59. At high frequency for rectification ___________ is used.

(a) Tunnel diode (b) Photo diode (c) Solar cell (d) Schottky diode
- junction diode is used as photo detector when it is under ______________ .

Ans: (d)
8.1.60.
(a) Reverse bias (b) Forward bias (c) Nobias (d) None of these
In reverse biased condition junction capacitance of step graded - junction diode varies
Ans: (a)
8.1.61.
proportionally.
(a) *, (b) *- (c) *. (d) */
+ + + +
Ans: (a)
8.1.62. Compared to avalanche diode, zener diode has
(a) Less doping concentration (b) Less barrier field intensity
(c) Higher barrier field ntensity (d) Higher depletion width
Ans: (c)
8.1.63. Which one is used as a reference voltage source?
(a) Junction diode (b) Zener diode (c) Transistor (d) Op-amp.
Ans: (b)
8.1.64. Avalanche breakdown is primarily depends on the phenomenon of ______________ .
(a) Particle collission (b) Impurity doping
(c) Ionization (d) Direct rapture of covalent bond
Ans: (a)
8.1.65. Compared to avalanche diode zener diode has __________________ .
(a) Less doping concentration (b) Less barrier field intensity
(c) Higher barrier field intensity (d) Higher depletion width
When the reverse voltage across - junction is gradually decreased, the depletion region
Ans: (c)
8.1.66.
inside the diode –
(a) Does not change in width
(b) Initially increases upto certain width then decreases
(c) Continuously increases in width
(d) Continuously decreases in width.
Ans: (d)
8.1.67. When a crystal diode is used as a rectifier the most important consideration is ____________ .
(a) Doping level (b) Forward characteristics
(c) Reverse characteristics (d) PIV rating
Mains 01 power is converted into 21 power for ___________ .

Ans: (a)
8.1.68.
(a) Lighting purpose (b) Heaters
(c) Using in electronic equipment (d) None of these
Ans: (c)
8.1.69. The disadvantage of a half-wave rectifier is that the _____________ .

(a) Components are expensive (b) Diode must have a higher power rating
(c) Using in electronic equipment (d) None of these
Ans: (c)
If the 01 input to a half wave rectifier has an rms of
3
√3
8.1.70. volts, then diode PIV rating is
(b) 200 (c) 200 × √2 .

566 566√5
√5 8
(a) (d)
Ans: (b)
8.1.71. The ripple factor of a half wave rectifier is
(a) 2 (b) 1.21 (c) 2.5 (d) 0.48
Ans: (b)
8.1.72. Ripple factor of a bridge rectifier is
(a) 2 (b)1.21 (c) 2.5 (d) 0.48
Ans: (d)
8.1.73. The PIV rating of each diode in a bridge rectifier, compare to the equivalent centre tap
rectifier is ______________ .
(a) One half (b) Same (c) Twice (d) Four times
Ans: (a)
8.1.74. If the PIV rating of a diode is exceeded
(a) The diode conducts poorly (b) The diode is destroyed
(c) The diode behaves as zener diode (d) None of these
Ans: (a)
8.1.75. Filter circuit is used in a rectifier
(a) To increase efficiency (b) To increase ripple factor
(c) To decrease ripple factor (d) None of these
Ans: (c)
8.1.76. The maximum efficiency of a half-wave rectifier is _____________ .
(a) 40.6% (b) 56.5% (c) 81.2% (d) 50%
Ans: (a)
(a) Pure 9) (c) Pure :) (c) :) + 9)

8.1.77. The output of a filter circuit consist of
(d) None of these
Ans: (c)
8.1.78. Crystal diode usually operates at
(a) Low frequency (b) High frequency
(c) Micro wae frequency (d) Can not say
Ans: (a)
(a) To eliminate 9) component (b) To reduce :) component

8.1.79. The filter circuit in a rectifier is used for
(c) To increase efficiency (d) To maintaint he frequency constant

Ans: (b)
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8.1.80. The application of zener diode is in the

(a) Half-wave rectifier (b) Voltage regulator (c) Bridge rectifier (d) Centre-tap wave rectifier
Ans: (b)
cycle is < . The PIV at each diode is

8.1.81. In a centre tapped full wave rectifier, the transformer secondary peak voltage across each half
(a) = (b) 2= (d) 4=

>?
5
(c)
Ans: (b)
8.1.82. For full-wave rectifier.
(a) One centre-tapped transformer is required. (b) Two centre-tapped transformers are required
(c) More than two centre-tapped transformers are required
(d) Centre tapped transformer is not required.
If the filtered load current is @<A, which of the following has a diode current of @<A?
Ans: (a)
8.1.83.
(a) Full wave rectifier (b) Bridge rectifier
(c) Half wave rectifier (d) Impossible to say
Ans: (c)
8.1.84. A full-wave rectifier has twice the efficiency of a half-wave rectifier because __________ .
(a) It makes use of a transformer (b) Its ripple factor is much less
(c) It utilises both half-cycles of the input
(d) Its output frequency is double the line frequency
Ans: (c)
8.1.85. The ripple factor of a full wave rectifier is.
(a) 0.406 (b) 1.21 (c) 0.482 (d) 0.812
A circuit and the signal applied at its input terminals ( ) are shown in figure below. Which
Ans: (c)
one of the options correctly describes the output wave form ( ). [Assume all the derives used
8.1.86.
are ideal]. [JAM-PH-'05]

(a) (b)
(c) (d)
Ans: (c)
voltage is −2, the diode will get forward

Hints: Let us begin with 2nd half cycle, the input
biased and capacitor will get charged to 2
cycle, the input voltage will be +2 and the

and output voltage will zero. In the next half
diode will be reversed biased and the

capacitor will hold the charge.
6 = E2 + 2) = 4
So the output voltage will be
8.1.87. A sine wave of F amplitude is applied at

the input of the circuit shown in the figure. Which of the following waveforms represents the
output most closely?
(a) (b)
10 | ELECTRONICS
(c) (d)
In a - junction diode the current

Ans: (d)
8.1.88. [JAM-GP-'05]
(a) Gets saturated for small forward bias voltage (b) Never gets saturated for forward bias votlage
(c) Is strictly zero for any forward bias voltage (d) Is strictly zero for any reverse biased voltage
Ans: (b)
8.1.89. If a semiconductor is doped with donor atoms then the impurity levels created in the
semiconductor are close to the [JAM-GP-'06]
(a) Bottom of the conduction band (b) Top of the valence band
(c) Bottom of the valance band (d) Top of the conduction band
In a reverse biased ideal - junction diode, with increase in the bias voltage the current will
Ans: (a)
8.1.90.
[JAM-GP-'07]
(a) Depend on temperature and saturate (b) Depend on temperature and increase linearly
(c) Be independent of temperature and saturate
(d) Be independent of temperature and increase linearly
Ans: (a)
voltage G = @F and power rating of 0.5W. If = H ,

8.1.91. The zener diode, as shown in figure below, has zener
the minimum value of in I that prevents the zener diode

from being destroyed is [JAM-GP-'12]
(a) 750 (b) 1050
(c) 540 (d) 250
Ans: (a)
J 0.5 1
Hints: Maximum zener current
J = = = &%.
J 15 30
Now minimum value of K
− J
= K
J
40 − 15
= K
1
30
K = 750
voltage is applied as the input . Which of the four wave forms shown below describes the
8.1.92. An ideal diode and a resistor are connected as shown in the diagram below. A sinusoidal
output? [T is the time period of the input waveform, and R is the series resistance]. [IISC-'06]
Input Voltage waveforem
(a) (b)
(c) (d)
Ans: (c)
Hints: Int he positive half cycle of input voltage, the diode is reversed biased, So, diode will behave like
open circuit and current through the circuit is zero hence output will follow the input. In negative
half cycle, with the diode will behave forward biased and will behave like short circuit and hence
the output voltage is zero.
Hence Option (c) diagram will given the correct result.
8.1.93. Which one of the following figures is the correct representation of a full-wave rectifier circuit
consisting of two diodes, a load resistor and a centre-tapped transformer?
(a) (b)
(c) (d)
Ans: (b)
12 | ELECTRONICS
A − junction was formed with heavily doped E@L 1<*M ) -region and lightly doped
(@@H 1<*M ) -region which of the following statement(s) is/are true?
8.1.94.
(a) The width of te depletion layer will be more in the -side of junction.
[JAM-PH-'16]
(b) The width of the depletion layer will be more in the -side of the junction.
(d) If the junction is reverse biased, the width of the depletion region increases.
(c) The width of depletion layer will be same on both the sides of junction.
In a junction dopart concentration on the -side is higher than that of -side. Which of the
Ans: (a, d).
8.1.95.
(a) The width of depletion layers is larger on the -side.

following statement(s) is/are true, when the junction is unbiased? [JAM-PH-'18]
(b) At thermal equilibrium the Fermi energy is higher on the -side.

(c) In the depletion region, number of negative change per unit area on the -side is equal to
number of positive charges per unit area on the -side.
(d) The value of the built in potential barrier depends on the depart concentration.
Ans: (a, c, d)
8.1.96. As the doping in a pure semiconductor increases, the bulk resistance of the semiconductor.
(a) Remains the same (b) Increases (c) Decreases (d) None of the above
Ans: (c)
8.1.97. A hole and electron is close proximity would tend to.
(a) Repel each other (b) Attract each other
(c) Have no effect on each other (d) None of the above
Ans: (b)
8.1.98. A piece of semiconducting material is introduced into a circuit. If the temperature of the
material is raised the circuit current will
(a) Increase (b) Decrease (c) Remain the same (d) Cease to flow
8.1.99. A zener diode is used as voltage regulator across an un regulated 21 source. Overreading will
Ans: (a)
(a) 9) source only

damage
(b) zener diode only (c) both (a) and (b) (d) Neither (a) nor (b)
Ans: (b)
8.1.100. An avalanche effect is observed in a diode when
(a) The forward voltage is less than the breakdown voltage.
(b) The forward voltage exceeds the breakdown voltage.
(c) The reverse voltage exceeds the breakdown voltage.
(d) The diode is heavily doped and forward biased.
Ans: (c)
with a forward resistance of FI and with infinite

8.1.101. The circuit shown in the figure contains two diodes each
backward resistance. If the battery voltage is N . The

current through @I is (in ampere).
(a) Zero (b) 0.02
(c) 0.03 (d) 0.036
Ans: (b)
8.1.102. Which of the following statement is not true?
(b) Doping pure OP with trivalent impurities given -type semiconductors.

(a) The resistance of intrinsic semiconductors decreases with increase of temperature.
(c) The majority carriers in -type semiconductor are holes.

(d) A - junction can act as a semiconductor diode.
8.1.103. In a - junction diode not connected to any circuit.

Ans: (c)
(b) The -type side is at higher potential than the -type side.
(a) The potential is same at every where.
(c) There is an electric field at junction directed from the -side to the -side.
(d) there is an electric field at the junction directed from the -type side to the -type side.
8.1.104. In a - junction with oepn ends.

Ans: (c)
(b) Holes and conduction electrons systematically go from -side to the -side and from -side to
(a) There is no systematic motion of charge carriers.
the -side and from -side to the -side respectively.

(c) There is no net charge transfer between the two sides.
(d) There is a constant electric field near the junction.
8.1.105. In a junction diode.

Ans: (b, c, d).
(a) New holes and conduction electrons are produced continuously throughout the material.
(b) New holes and conduction electrons are produced continuously throughout the material except
in the depletion region.
(c) Holes and conduction electrons recombine continuously throughout the material except in the
depletion region.
Ans: (a, d).
8.1.106. A semiconducting device is connected in a series circuit with a battery and a resistance. A
current is found to pass through the circuit. If the polarity of the battery is reversed, the
(b) A -type semiconductor

current drops to almost zero. The device may be
(c) An -type semiconductor (d) A - junction

(a) An intrinsic semiconductor
Ans: (a, b, c, d)
8.1.107. A semiconductor is doped with donor impurities.
(a) The hole concentration increases (b) The hole concentration decreases
(c) The electron concentration increases 9d) The electron concentration decreases
8.1.108. Pure silicon is simultaneously doped with boron to a concentration of @3 atomsper 11 and
Ans: (d)
phosphorus to a concentration of Q × @@R atoms per 11. The number of holes per unit
(a) 1056 (b) 17 × 10ST (c) 7 × 10ST (d) 3 × 10ST

volume of silicon will be approximaterly.
Ans: (a)
14 | ELECTRONICS
S5 = U ℎW
Hints: We know that intrinsic concentration is given by
U → Number of holes/unit volume

ℎW → Number of electrons/unit volume
W = 7 × 10ST
U = 1056
∴ Z5 = 7 × 10ST × 1056
Z = 8.5 × 10ST ≃ 1056
8.1.109. Two identical zener diodes having specification @3 , ] are connected in series. If the
@
H
breakdown voltage at each diode is F . then what is the breakdown voltage in the series
combination of the diodes?
(a) 2.5V (b) 5V (c) 10V (d) 12V
Ans: (c)
(a) Barrier potential of - junction is independent of temperature.

8.1.110. Consider the following statements and which is/are correct(s)?
(b) Barrier potential depends on differences between Fermi levels on two sides of junction.
(d) Barriier potential depends on impurity concentration in and -type semiconductors.

(c) Barrier potential depends on forbidden energy-gap on two types of semiconductors.
Ans: (b, c, d).
voltage across ^ is
8.1.111. In the circuit given below having an ideal diode, the rms
(a) 100V (b) 140V

(c) 70V (d) 50V
8.1.112. The voltage across a diode in a full wave rectifier having input voltage of peak value < ,
Ans: (a)
(b) −= (c) −2= (d) −4=

during its non conducting period is
(a) Zero
Ans: (c)
8.1.113. The circuit given below has two oppositely
connected ideal diodes in parallel. What is the
current flowing in the circuit?
(a) 1.33A (b) 1.71A
(c) 2.00A (d) 2.31A
Ans: (c)
Hints: Here the equivalent circuit will be
12
Thus current will be
&
4 + 12
12
= = 2&.
6&
8.1.114. What is the current through @I

resistance in the circuit?
(a) 0.01A (b) 0.024A
(c) 0.04A (d) 0.06A
Here in the given circuit from `5

Ans: (b)
Hints:
No current will pass through.
6 = E150 + 100)
Hence we get Applying KVL
6
Or = = 0.024&
250
8.1.115. When tow identical zener doides are connected in series, what happens to the breakdown
voltage of the combination?
(a) It is halved (b) It is doubled (c) It remains same (d) It becomes zero
Ans: (b)
with resistive laod c , which is far greater

8.1.116. The below figure shows a half-wave rectifier
of the capacitor d is considerably large, then

then the diode forward resistance. If the value
the d voltage across c will be

(a) 10V (b) about 5V
(c) about 14V (d) 28V
Ans: (b)
e = EVoltage across load)

Hints: We know that
6 10
= = = 5
2 2
8.1.117. What is the value of the diode current in the
using
p diode, shown below?
circuit
(a) 0%& (b) 0.5%&

(c) 1%& (d) 1.5%&
Ans: (a)
Hints: Here the diode will be in a conducting state when
forward biased voltage is applied to it and in non-
single battery of E10 − 9) = 1. Which will make the diode reverse biased and diode goes to
conducting stae, when reverse biased voltage is applied to it, the two batteries may be replaced by a
8.1.118. Three zener diodes of identical specification having @], @ , @<A are connected in
non-conducting state and hence the current will become zero.
series to a HF d power supply. What is the series resistance required to obtain M
(a) 45 (b) 30 (c) 15 (d) 5

regulated output?
Ans: (c)
16 | ELECTRONICS
Potential 10
Current = 1000%&
Hints:
10
Resistance in each zener diode
K= = = 10
1&
KWr = KS + K5 + Ks = 30
Thus, equivalent resistance in the circuit
45
Now = 1000%& =
v + 30
Where v is the internal resistance.
45
∴1= w1& = 1000%&x
v + 30
Or v + 30 = 45
Or v = 15
Hence the internal resistance is 15.
8.1.119. A half-wave rectifier employs a transformer with turn ratio @ ∶ 3 = @3 ∶ @. Its primary coil
is connected to the power mains 33 , Fz{, if the diode resistance in forward bias is
negligible, what is the PIV of the diode?
(a) 3.73V (b) 12.98V (c) 25.9V (d) 311V
Ans: (c)
mains 220, the potential of secondary coil is = S5 . Now the peak inverse voltage for the half
556
Hints: Here the turn ratio of the transformer is 12 : 1, so, if the primary coil is connected to the power
× √2 = 25.9.
556
S5
wave rectifier will be
8.1.120. What is the value of the form factor of a half wave rectifier?
(d) |
8 8 8
(a) 5
√5 √5
(b) (c)
Ans: (b)
Hints: The ratio of rms value to the average value is called the form factor
∴ Form factor =

6
For half wave rectifier
= =
√2
6
> =
|
6
|
∴ Form factor = √2 =
6 √2
|
8.1.121. The number of - junctions in a BJT is
(a) 1 (b) 2 (c) 3 (d) 4
Ans: (b)
8.1.122. The base of BJT is doped

(a) Heavily (b) LIghtly (c) Moderately (d) None of these
8.1.123. In an transistor, the current is carried by

Ans: (b)
(a) Acceptor ions (b) Donor ions (c) Holes (d) Free electrons
Ans: (d)
8.1.124. A transistor is ________ controlled device.
(a) Voltage (b) Current (c) Both (a) and (b) (d) None of these
8.1.125. In the transistors the majority carriers are

Ans: (b)
(a) Electrons (b) Holes (c) Donor ions (d) Acceptor ions
Ans: (b)
8.1.126. The base emitter junction of BJT offers
(a) a wide depletion layer (b) Low resistance
(c) Large barrier height (d) None of these
Ans: (b)
8.1.127. The output impedance of transistor
(a) High (b) Low (c) Very low (d) Zero
Ans: (a)
8.1.128. The input impedance of transistor
(a) High (b) Low (c) Very high (d) Zero
Ans: (b)
8.1.129. Most of the majority carriers from the emitter perform the operation _______
(a) Recombine in the base (b) Recombine in the emitter
(c) Pass through the base region to the collector (d) None of the above
Ans: (c)
(a) = + (b) = + (c) = + (d) = −

8.1.130. In a transistor, base, emitter and collector current obeys the relation –
8.1.131. d = ^ + ______________

Ans: (c)
(a) (b) (c) (d)
8.1.132. In a transistor d = 3N<A and ^ = 3@. F<A the value of .

Ans: (b)
(a) 100 (b) 50 (c) 400 (d) About 1
8.1.133. Relation between and is.

Ans: (b)
(a) = S* (b) = 1 − (c) = S* (d) = S

S S S
Ans: (c)
18 | ELECTRONICS
8.1.134. The value of for a transistor is.

(a) Greater than 1 (b) Less than 1 (c) Equal to 1 (d) About 1000
Ans: (b)
8.1.135. The input impedance be highest of the transistor when operated in configuration.
(a) CE (b) CB (c) CC (d) None
Ans: (c)
(a) 180°
8.1.136. The phase difference between the input and output voltae in CB configurationis ______.
(b) 90° (c) 270° (d) 0°
8.1.137. The value of is 0.99, the vlaue of will be –

Ans: (d)
(a) 0.9 (b) 0.09 (c) 90 (d) 99

Ans: (d)
8.1.138. In a transistor, signal is transferred from a ________
(a) High resistance to low resistance circuit. (b) Low resistance to high resistance circuit
(c) High resistance to high resistance circuit (d) Low resistance to low resistance circuit
Ans: (b)
8.1.139. With both junciton reverse biased the transistor operates in _____________
(a) Active region (b) Cut-off region (c) Saturation region (d) Inverted region
Ans: (b)
8.1.140. For an emitter follower circuit the voltage gain is ____________
(a) Unity (b) Greater than unity (c) Less than unity (d) None of these
8.1.141. d depends stongly on temperature, approximately doubles for every ___________ .
Ans: (a)
(a) 5°C (b) 7°C (c) 10 (d) 15°C
8.1.142. In a − − transistor biased in active region the dominant current flow is by the corriers
Ans: (c)
E) and the mechanism is () _________________

(a) Holes, drift (b) Electrons, drift (c) Holes, diffusion (d) Electrons, diffusion
8.1.143. Minority carrier injection in an transistor is biased in the active region means
Ans: (c)
predominantly _______________
(a) Holes injected into base region (b) Electrons injected into emitter region
(c) Electrons injected into the base reigon (d) Holes injected into the emitter region
Ans: (c)
(b) Changes in which increases with temperature

8.1.144. Thermal runaway in a transistor biased in the active region is due to ____________ .
(a) Heating of the transistor
(c) Base emitter voltage which decreases with rise in temperature.
(d) Change in reverse collector saturation current due to rise in temperature.
Ans: (d)
8.1.145. In cut-off region the voltage d^ of a common emitter amplifier is __________ .

(a) OV (b) Minimum (c) Maximum (d) Equal to
Ans: (d)
8.1.146. In active mode of operation of BJE _______________ .
(a) Emitter-base junction is forward biased and collector-bae junction is reverse biased.
(b) Emitter-base junction is forward biased and collector base junction is reverse biased.
(c) Emitter-base junction is reverse-biased, and collector junction is forward biased.
(d) Emitter-base junction is reverse biased and collector-bae junction is reverse-biased.
Ans: (a)
(b) Proper alternating current and 9) voltage.

8.1.147. Biasing in transistor is required to keep ______ in the circuit.
(a) Proper direct current and voltage.
(c) Collector reverse saturation current small. (d) Small base current
Ans: (a)
(a) Values of and when :) signal is applied.

8.1.148. Operating points represent ______.
(b) Values of and .
(d) Values of and before the application of :) signal.

(c) Magnitude of external signal
Ans: (d)
8.1.149. Without biasing the amplifier circuit results in
(a) Decrease in base current (b) Excessive collector current
(c) Unfaithful amplification (d) Larger gain
Ans: (c)
8.1.150. In a transistor circuit, biasing is provided by
(a) Biasing circuit (b) Bias battery (c) Diode (d) External resistance
Ans: (a)
8.1.151. For proper operation of transistor, the collector should have ________.
(a) Proper forward bias(b) Proper reverse bias (c) Very small size (d) Very large reverse bias
Ans: (b
8.1.152. The circuit that provides the best stabilization of operating point is ___________ .
(a) Base resistor bias (b) Collector feedback resistor
(c) Voltage divider bias (d) None of these
Ans: (c)
(b) Is sensitive to changes in

8.1.153. The disadvantage of base resistor biasing method of transistor biasing is that it ________ .
(a) Is complicated to design
(c) Provides high stability (d) None of these
Ans: (b)
8.1.154. Thermal run way occurs when
(a) Collector is reverse biased (b) Transistor is not properly biased
(c) Emitter is forward biased (d) Junction capacitance becomes large
Ans: (b)
20 | ELECTRONICS
(a) Change in (b) Change in

8.1.155. When the temperature changes, the operating point shifted due to _______ .
(c) Change in the values of circuit resonance (d) None of these
8.1.156. In practical biasing circuit the value of ^ is about

Ans: (a)
(a) 10 (b) 100 (c) 1 (d) 1
8.1.157. The capacitance d^ is used across the emitter resistance ^ , for the purpose _________ .
Ans: (c)
(a) To bypass the :) component across K to ground

(b) To bypass the :) component across collector resistance
(c) To block the 9 ) part away from emitter (d) None of the above
8.1.158. The -parameter model of BJT is applicable at

Ans: (a)
(a) Low frequency (b) High frequency

(c) Very low frequency (d) Both high and low frequency
8.1.159. To draw the 01 equivalent circuit of a transistor all the 21 power supplies are
Ans: (a)
(a) Replaced by their internal impedance (b) Replaced by open circuit

(c) Present in circuit (d) None of these
8.1.160. p has the dimension of

Ans: (a)
(a) Ohm (b) Farad (c) Siemen (d) Henry
8.1.161. p and p are dimension less because

Ans: (a)
(a) Does not depend on frequency (b) Strongly depends on frequency

(c) Are the ratios of identical parameters (d) Strongly depend on temperature
8.1.162. With the variation of d the base width modulation occurs. The phenomenon is
Ans: (c)
(a) Punch through (b) Early effect (c) Thermal runaway (d) None of these
Ans: (b)
(a) Large reverse bias of the ¡ junction (b) Large forward bias of ¡ junction
8.1.163. Punch through occurs for
(c) Large forward bias of ¢¡ junction (d) Large reverse bias of ¢¡ junction
8.1.164. If d and c represents the collector resistance and load resistance respectively in a d^
Ans: (a)
amplifier, then Ad load is

(a) Ke + KW (b) Ke ||K (c) Ke − K (d) K
Ans: (b)
8.1.165. For highest power gain, which configuration of BJT should be used?
(a) CC (b) CB (c) CE (d) Either accor CE
Ans: (c)
8.1.166. If the load resistance of an amplifier is low then voltage gain will be
(a) High (b) Very high (c) Low (d) About zero
8.1.167. The capacitance dp is connected in parallel to ^ to.

Ans: (c)
(d) To increase the effect of K

(a) Avoid volage gain drop (b) Forward bias emitter
(c) Reduce noise in the amplifier
8.1.168. × has a very high current, voltage and power gain, × is

Ans: (a)
(a) CE amplifier (b) CB amplifier (c) CC amplifier (d) None of these
8.1.169. The effect of introducing the p in the d^ amplifier is to ____________ .

Ans: (a)
(a) Increase the voltage gain (b) Decrease the voltage gain
(c) Increase the current gain (d) Decrease the current gain
Ans: (b)
8.1.170. In voltage amplifier.
(a) Input is voltage, output is current (b) Input is voltage, output is voltage
(c) Input is current, output is voltage (d) Input is current, output is current
8.1.171. A signal of @< is input an amplifier circuit consisting of a transistor in d^ mode. What is
Ans: (b)
the voltage gain if the collector current changes by @<A and the load resistance is equal to
@¤I?
(c) 10
[JAM-GP-'06]
¥
(a) 10 (b) 100 (c) 1000
Output voltage = 1 × 1%& = 1

Ans: (c)
Input voltage = 1%.

Hints:
6 1
∴ = *s = 10s = 1000.
Z 10
8.1.172. In an -transistor, 95% of emitted electrons reach the collector. If the collector current is
@R<A, the base current will be
(a) 0.5%& (b) 1.0%& (c) 1.5%& (d) 2.0%&
[JAM-GP-'09]
Ans: (b)
9 = ¦§
¦
©
Hints:
¨
Or = here © = 0.95
1−©
∴ = 6.6¬ = 19
6.T«
19
= = %& = 1 %&.
19
(a) Values of and when signal is applied (b) The magnitude of signal
8.1.173. Operating point represents.
(c) Zero signal values of and (d) None of the above
Ans: (c)
22 | ELECTRONICS
8.1.174. For faithful amplificaiton by a transistor circuit, the value of d^ should _________ for Si
transistor.
(a) Not fall below IV (b) Be zero (c) Be 0.2V (d) None of the above
8.1.175. If the maximum collector current due to a signal alone is M<A, then zero signal collector
Ans: (a)
(a) 6%& (b) 2%& (c) 3%& (d) 1%&

current should be at least.
Ans: (c)
8.1.176. The leakage current in a si transistor is about _____________ the leakage current in Ge
transistor.
(a) One hundredth (b) One tenth (c) One thousandth (d) One millionth
Ans: (c)
8.1.177. A BJT with one junction forward biased and either collector or emitter open, operates in
(a) Cut-off region (b) Saturation region (c) Pinch-off region (d) Active region
Ans: (b)
d^ when =
8.1.178. For a transistor circuit.
(a) 10V (b) 0V

(c) 5V (d) 2.5V
8.1.179. In previous question maximum when = F E = 3)w®¯°®±²E d^ )0³ x

Ans: (a)
(a) 86 (b) 68 (c) 50 (d) 86
Hints: If = 200, Z´ = 5

Ans: (a)
∴ 5 = K +
Or 4.3 = K
Now gain = K +
10
∴ = = 10%&
1
10%&
∴ = = 50 × 10*« & = 50&
200
4.3
∴ K = = 86
50 × 10*«
H. F¤I and the dynamic resistance of the emitter junction is FI, then what is the voltage
8.1.180. A BJT having current amplification factor 0.99 is used in a CB mode. If the load resistance is
gain?
(a) 89.1 (b) 79.1 (c) 69.1 (d) 59.1
8.1.181. IN a transistor, the change in base current from @·A to @3F·A causes change in collector
Ans: (a)
current from F<A to Q. F<A. Keeping collector to emitter voltage constant at @ . What is
the current gain of transistor?
(a) 200 (b) 100 (c) 50 (d) 25
Ans: (b)
= . RR, if the emitter current is changed by @<A, then the change in will be
8.1.182. A transistor operating in a common base configuration has a forward current gain factor,
(a) 100& (b) 0.01%& (c) 0.99%& (d) 99%&

Ans: (b)
8.1.183. In the voltage series feedback amplifier the output impedance due to feedback.
(a) Increases (b) Decreases
(c) Does not change (d) Either increase or decrease
Ans: (b)
8.1.184. The gain stability depends on
(a) Input voltage (b) Output voltage (c) Feedback factor (d) None of these
Ans: (c)
8.1.185. In negative feedback amplifier the bandwidth
(a) Increases (b) Decreases
(c) Remains constant (d) Does not depend on feedback
Ans: (a)
8.1.186. The dimension (unit) of feedback ratio is
(a) Voltage (b) Current (c)Impedance (d) Dimensionless
Ans: (d)
8.1.187. Inpresence of positive feedback
(a) Stability increases (b) Bandwidth reduces (c) Gain increases (d) No effect will arise
Ans: (b, c)
(a) 0° or 360° (b) 0° or 90° (c) 90° or 180° (d) 0° or 180°

8.1.188. Form oscillator circuit the total phase shift should be
Ans: (a)
8.1.189. Barkhansen criteria is associated with
(a) Negative feedback (b) Amplifier
(c) Dagenerative feedback (d) Regenerative feedback
Ans: (a)
(a) |&| = 1 (b) & = 1 (c) & > 1 (d) & < 1
8.1.190. Barkhausen criteria is
Ans: (b)
8.1.191. In an emitter follower circuit the feedback type is
(a) Positive (b) Negative (c) (a) to (b) (d) None of these
Ans: (b)
8.1.192. In transconductance amplifier
(a) Input is voltage and output is current (b) Input is voltage, output is voltage
(c) Input is current and output is voltage (d) Input is power and output is voltage
Ans: (a)
8.1.193. In a oscillator.
(c) :) input signal is applied

(a) Negative feedback is used (b) Positive feedback is used
(d) Amplification occurs
Ans: (b)
24 | ELECTRONICS
8.1.194. In a current shunt feedback amplifier

(a) Input resistance increases but output resistance decrease
(b) Input resistance decreases but output resistance increases
(c) Both input and output resistance increase
(d) Both input and output resistance decrease
Ans: (b)
8.1.195. A-transconductance amplifier has the feedback toplogy of
(a) Voltage series (b) Voltage shunt (c) Current series (d) Current shunt
Ans: (c)
8.1.196. In a current amplifier
(a) Input is voltage, output is current (b) Input is voltage, output is voltage
(c) Input is current, output is voltage (d) Input is current, output is current
8.1.197. The term E@ + 0) is known as

Ans: (d)
(a) Gain factor (b) Loop gain (c) Feedback ratio (d) Return difference
8.1.198. |A| is known as

Ans: (d)
(a) Gain factor (b) Feedback factor (c) Power factor (d) None of these
Ans: (b)
8.1.199. For negative feedback stability of the noise level.
(a) Decreases (b) Increases (c) Either (a) or (b) (d) None of these
Ans: (a)
8.1.200. The amplifier gain with feedback is called.
(a) Closed loop gain (b) Open loop gain (c) Voltage gain (d) Current gain
Ans: (a)
8.1.201. The instability of the feedback amplifier circuit increases in presence of
(a) Negative feedback (b) Positive feedback
(c) In presence of any type feedback (d) None of these
Ans: (b)
8.1.202. Crystal oscillator is preferred because
(a) It has a high output voltage (b) Its frequency of oscillations is quite constant
(c) It does not make use of any active device (d) It requires very low power
8.1.203. ____________ is an ¸ oscillator.

Ans: (b)
(c) K phase shift oscillator

(a) Wein bridge oscillator (b) Colpits oscillator
(d) None of these
8.1.204. The d phase shift oscillator will not produce any oscillation untill voltage gain of internal
Ans: (b)
amplifier is
(a) More than 29 (b) Less than 56 (c) More than 3 (d) Equal to 1
Ans: (a)
8.1.205. Which one is most suitable for generating @¹z{ frequency?

(a) Colpitts oscillator (b) Crystal oscillator
(c) Weinbridge oscillator (d) Phase shift oscillator
Ans: (a)
8.1.206. Which is used in audio frequency oscillator
(a) Wein bridge oscillator (b) Hartly oscillator
(c) Crystal oscillator (d) Colpitts oscillator
Ans: (a)
8.1.207. Weinbridge oscillator generates oscillation only if the gain of the two stage amplifier is
(a) More than 3 (b) Less than 56 (c) Equal to 1 (d) None of these
Ans: (a)
8.1.208. The equivalent electrical circuit of a vibrating crystal is as shown below.
The expression for the resonance frequency of the circuits is
(c) 58 » e ?
S S S S
(a) 58√e
58ºeE? ) 58º¼E? )
(b)
?
(d)
Ans: (b)
8.1.209. For a square wave response, the rise-tie of a transistor is defined as the duration in which its
response varies from
(a) 10% to 50% (b) 0% to 50% (c) 10% to 90% (d) 25% to 75%
Ans: (c)
8.1.210. Which of the following are true in case of negative feedback amplifier?
(a) Stability of the amplifier decreases (b) Distortion of the amplifier decreases
(c) Noise in the amplifier increases (d) Bandwidth of amplifier decreases
Ans: (b, c, d)
8.1.211. An electric oscillator gives a sustained oscillation, when the feedback is
(a) Negative and out of phase with input (b) Negative and in phase with input
(c) Positive and out of phase with input (d) Positive and in phase with input
8.1.212. If a transistor amplifier has a gain of 32 then the ratio of output to input powr is
Ans: (b)
(a) 100 (b) 10 (c) 20 (d) 200

Ans: (a)
8.1.213. Which of the following are essential for maintaining oscillator in an oscillator?
(a) Positive feedback (d) Design of load (c) Non linear biasing circuit(d) High gain amplifier
Ans: (a, b, c, d)
26 | ELECTRONICS
8.1.214. The frequency response cure of a d coupled
(a) ½s − ½5 (b) ½¥ − ½S
amplifier is shown the band width of the amplifies is
(d) ½s − ½S
¾. *¾,
5
(c)
Ans: (b)
8.1.215. Which of the following factors do not affect the frequency stability of an oscillator?
(a) Output load (b) Inter-element capacitances and stray capacitances
(c) Temperature variation (d) Coil size
Ans: (a)
8.1.216. Consider the following statements and mark the correct one(s). An oscillator
(a) Consists of positive feedback amplifier (b) Has noise at the initial signal
(c) Consist of frequency selecting network (d) Consist of noise rejecting network
Ans: (a, b, c,).
8.1.217. The overall gain of a two stage amplifier is 80dB. If the voltage gain of the first stage is 100,
then the voltage gain of second stage is
(a) 20 (b) 100 (c) 180 (d) 8000
8.1.218. The main function of coupling capacitor in an d coupled common emitter amplifier is to
Ans: (c)
(a) Increase the input impedance (b) Increase the output impedance
(c) Increase the gain of the amplifier (d) DC isolation
Ans: (d)
8.1.219. A crystal oscillator provides a very stable frequency because of
(a) High stability of crystal (b) The rigid crystal structure
¿À
¼
(b) Low ratio in crystal (d) High Q value of the crystal.
Ans: (d)
8.1.220. An ideal OPAMP has
(a) Infinite input and output impedance
(b) Infinite input impedance and zero output impedance
(c) Zero input and output impedance
(d) Zero input impedance and infinite output impedance.
Ans: (b)
8.1.221. Input differential stae of OPAMP 741 is biased at about @<A current such low current of
the input stage gives
(a) High CMRR (b) High differential gain (c) Low CMRR (d) High input impedance
Ans: (d)
8.1.222. In 2 scale CMRR is defined as
(a) 20 logS6 >, (b) 20 logS6 ÁÂ (c) 10 logS6 ÁÂ
> Á Á Á
(d) ÁÂ
+ § § §
Ans: (b)
8.1.223. For an ideal OPAMP, common mode voltage gain is

(a) Infinite (b) Zero (c) Greater than 1 (d) Less than 1
Ans: (b)
8.1.224. The following circuit is known as
(a) Inverting amplifier
(b) Non inverting amplifier
(c) Voltage follower
(d) Integrator
Ans: (c)
8.1.225. An ideal voltage follower provides.
(a) Zero input impedance and zero output impedance
(b) Infinite input impedance and infinite output impedance
(c) Infinite input impedance and zero output impedance
(d) Zero input impedance and zero output impedance.
Ans: (c)
8.1.226. An OPAMP in verting amplifier has
(a) Infinite input resistance and zero output resistance
(b) Finite input resistance and low output resistance
(c) Small input resistance and large output resistance
(d) None of those
Ans: (b)
(a) 10³ (b) 10¬ (c) 10²

8.1.227. A practical OPAMP has voltage gain of the order of
(d) Unity
Ans: (b)
8.1.228. High input impedance of an OPAMP leads to
(a) Negligible input current to OPAMP (b) Low output impedance
(c) High offset voltage (d) High input current
Ans: (a)
8.1.229. If equal voltages are applied to the input terminals of an OPAMP the output voltage will be
(a) Zero (b) Infinite
(c) Depends on internal voltages (d) None of these
Ans: (a)
8.1.230. Common mode voltage is applied to
(a) Inverting inputs (b) Non inverting inputs (c) Both inputs (d) At supply terminals
Ans: (c)
8.1.231. With non inverting voltage feedback, the circuit approximates an ideal
(a) Voltage amplifier (b) Current to voltage converter
(c) Voltage to current converter (d) Current amplifier
Ans: (c)
28 | ELECTRONICS
(b) An :) ground
8.1.232. Current can not flow through
(a) A mechanical ground
(c) A vertual ground (d) An ordinary ground
Ans: (c)
8.1.233. In a current to voltage convertor the input current flows through
(a) The input impedance of OPAMP (b) The feedback resistor
(c) To ground (d) The load resistor
Ans: (b)
8.1.234. The odder is an OPAMP circuit
(a) Adds to input voltae to get the output (b) Mixes two audio signal
(c) Uses in transistor (d) None of these
Ans: (a)
8.1.235. In a non linear OPAMP circuit
(a) OPAMP never saturates (b) Feedback loop is never opened
(c) Output shape is the same as input shape (d) OPAMP may saturate
Ans: (d)
8.1.236. The output voltage of a schmitt trigger is
(a) A low voltage (b) A high voltage
(c) Either a low or a high voltage (d) A sine wave
Ans: (c)
8.1.237. A comparator with a trip point of zero is sometimes called a
(a) Threshold detector (b) A high voltage
(c) Positive limit detector (d) Half wave rectifier
Ans: (b)
8.1.238. When a large sine wave drives a schmitt trigger, the output is
(a) Rectangular wave (b) Triangular wave
(c) Rectified sine wave (d) Series of ramp
Ans: (a)
8.1.239. If the input is a rectangular pulse, the output of an integrator
(a) Sine wave (b) Square wave (c) Ramp (d) Rectangular pulse
Ans: (c)
8.1.240. A schmitt trigger uses
(a) Positive feedback (b) Negative feedback
(c) Compensating capacitors (d) Pullup resistors
Ans: (a)
8.1.241. A schmitt trigger circuit
(a) Is a zero crossing detector (b) Has two trip points
(c) Produces triangular output wave (d) Is designed to trigger on noise voltage
Ans: (b)
8.1.241. A schmitt trigger circuit

(a) Is a zero crossing detector (b) Has two trip points
(c) Produces triangular output wave (d) Is designed to trigger on noise voltage
Ans: (b)
8.1.242. The circuit shown in figure can be used as
(a) High pass filter or a differentiator
(b) Low pass filter or a differentiator
(c) High pass filter or an integrator
(d) Low pass filter or an integrator
Ans: (d)
voltage ±F is shown in the diagram. The

8.1.243. Abistable multivibrator with a saturation
positive and the negative thresholds at the

inverting terminal for which the
multivibrator will switch to the other state
are
(a) ± SS (b) ± SS
¬ S6
(c) ±5 (d) ±11

Ans: (a)
Z´
Hints: Here the threshold voltage
Æ =
6
K¬ 2 × 10«
6 = ± Ç1 + È = ± É1 + Ê = ±w1 + 10x = ±11
K 200 × 10s
Z´ 5
∴ Æ = =±
6 11
8.1.244. Figure shows a practical integrator with =
M·I, ¸ = 3·I and d¸ = . @·¸. If a step
Ed) voltage of +M ia applied as input for
≤ +≤ H (in sec) the output voltage is.
(a) A ramp function of −6
(b) A step function of −12
(c) A ramp function of −15
(d) A ramp Function of −4
Ans: (d)
Hints: Here
Ï
1
= − Í EÎ)9Î
Ì K
6
− Î −3 × 4
= = = −4
Ì K 30 × 10« × 0.1 × 10*«
30 | ELECTRONICS
8.1.245. The CMRR of a differential amplifier using an OMPAMP is @2. The output voltage for
the differential input of 3· is 3 , the common mode gain is
(a) 109¡ (b) 0.19¡ (c) 309¡ (d) 1009¡
Ans: (b)
ÐKK = ÁÂ
Á
Hints:
§
2
&Ñ = = = 10¥
S − 5 200 × 10*«
10¥
Now we know that
Ò = 20 logS6 Ó Ô
&
1009¡ 10¥ 10¥ 10¥
= logS6 Ó Ô Or 5 = logS6 Ó Ô Or 10 =
¬
Or & = 0.19¡.
20 & & &
8.1.246. The low pass active filter shown
3Õz{ and a pass band gain of @. F.

below has a cut-off frequency of
(a) KS = 10, K5 = 1.3

The vlaues of the resistors are.
(b) KS = 30, K5 = 1.3

(c) KS = 10, K5 = 1.7
(d) KS = 30, K5 = 1.7
Ans: (d)
×
Hints: The voltage at non-inverting terminal
− Ø) Z´
Ö = Z´ =
× 1 + ×ØK
K5 − Ø)
K¾ K¾ Z´
The output voltage
6 = Ù1 + Ú ´ = Ù1 + Ú
KS KS 1 + ×ØK5
K¾
6 1+
KS
∴ =&=
Z 1 + ×ØK5
K¾
Now &=Û = 1 +
KS
1
We know at cut-off frequency
&=
√2
1 &=Û
∴ &=Û =
√2 1 + ×Ø²K5
Or √2 = √1 + Ø²K55 ²
Or 2 = 1 + ω5 K55 5
Or ØK5 = 1
1
Ø=
K5
1
½=
2|K5
Now &=Û = 1.5
K¾ 15
∴ 1.5 = 1 + =1+
KS KS
15
KS = = 30
0.5
Now at ½ = 2ÝÞß, = 0.047à
1
∴ 2 × 10s =
2| × K5 × 0.047 × 10*«
1
Or K5 = = 1.69 =≃ 1.7.
2| × 10 × 2 × 0.047 × 10*«
s
8.1.247. The transformer is used in the output of a power amplifier

(a) To increase output power (b) To increase the voltae gain
(c) To match the load resistance with the O/P resistance of a transistor
(d) To fix-Q-point
Ans: (a)
8.1.248. The efficiency of a direct coupled class A amplifier
(a) 25% (b) 50% (c) 78.5% (d) 37.5%
Ans: (a)
8.1.249. The output of a class B push-pull amplifier
(a) Is distortion free (b) Consist of positive half cycle
(c) Is similar to the output of a full wave rectifier
(d) Contains less harmonic distortion
Ans: (d)
8.1.250. Cross over distortion occurs in ______ amplifiers
(a) Push-pull (b) Class A (c) Class B (d) Class AB
Ans: (a)
8.1.251. Class AB operaiton is often used in power amplifiers in order to __________ .
(a) Get maximum efficiency (b) Remove even harmonic
(c) Overcome cross over distortion (d) Reduce oscillator dissipation
Ans: (a)
8.1.252. The output power of a power amplifier is several times input power. It is possible because
________ .
(a) The power amplifier introduces negative resistance
(c) The power amplifier converts a part of the 9) supply.

(b) The amplifier introduces 180° phase shift
(d) Step up transformer is used at the output.

Ans: (c)
32 | ELECTRONICS
8.1.253. Cross over distortion arises in push-pull amplifier due to

(a) Non linear characteristics of transistor
(b) Non linear dependance of collector current on the base current
(c) Mismatch of two transistor (d) None of these
Ans: (a)
8.1.254. Amplitude distortion arises because ___________ .
(a) The collector current does not increase equally with equal increment of the base current.
(b) Non linearity of output characteristics
(c) Mismatch of transistors (d) None of these
8.1.255. In a class d amplifier, the collector current flows for

Ans: (a)
(a) Less than half of the cycle (b) Half the cycle
(c) Greater than half cycle (d) The entire cycle
8.1.156. In class d amplifier _____________ is

Ans: (a)
(a) Turned circuit (b) Only resistance (c) Only capacitance (d) None of these
Ans: (a)
8.1.257. Efficiency is highest in power amplifier operated as
(a) Class A (b) Class B (c) Class AB (d) None of these
Ans: (c)
8.1.258. Which one of the following is not an input or output of the timer?
(a) Threshold (b) Control voltage (c) Clock (d) Trigger
Ans: (c)
8.1.259. The estable multi vibrator is
(a) An oscillator (b) An amplifier
(c) Characterised by having no stable (b) A time delay circuit
Ans: (a, c)
8.1.260. The output frequency of a 555 timer connected as an oscillator is determined by
(a) The supply voltage (b) The frequency of the trigger
(c) The external RC time constant (d) The intenal RC time constant
Ans: (c)
8.1.261. The monostable multivibrator has
(a) No stable state (b) One stable state (c) Two stable state (d) None of these
8.1.262. A timer 555 is connected in monostable. Operation with external resistance = 3¤I and
Ans: (b)
capacitance @·¸. The output pulse has a width.

(a) 1.1 %Oá) (b) 2.2 %Oá) (c) 2Oá) (d) 1Oá)
Ans: (b)
8.1.263. An astable multivibrator is used to generate.
(a) Fixed frequency of sine wave (b) Clock pulse
(c) Only one pulse (d) None of these

Ans: (b)
8.1.264. Which one is a function generator IC.
(a) IC 566 (b) IC 555 (c) IC 565 (d) IC 741
Ans: (a)
8.1.265. APLL maintains lock by comparing
(a) The pulse of two signals (b) The frequency of two signals
(c) The amplitude of two signals (d) None of these
Ans: (b).
MULTIPLE SELECTIVE TYPE QUESTION

8.1.7. Compared to BJT, FET has
(a) Has a large gain-bandwidth product (b) Is less noisy
(c) Has less output resistance (d) Has only majority carrier flow
Here the correct statement(s) is/are?
Ans: (b), (d)
MCQ-DIGITAL
1. A gate with only one input and one output is
(a) OR gate (b) NOT gate (c) NANO gae (d) AND gate
Ans: (b)
2. The binary number 110000111101 corresponds to a hexadecimal number.
(a) CFD (b) D3C (c) DBF (d) C3D
The function G for the following truth table.

Ans: (d)
3.
A B C Z
0 0 0 1
0 0 1 1
0 1 0 1
0 1 1 1
1 0 0 0
1 1 0 0
(a) â = & + ¡ (b) â = &̅ + ¡ä (c) â = &̅ + ¡ (d) â = &̅ + ¡ä

1 1 1 1
The output from the logic gate circuit is

Ans: (c)
4.
34 | ELECTRONICS
(a) &̅ + ¡ä (b) &¡ ääää

(c) &¡ ääääääää
(d) & +¡
The Boolean expression of the output interms of the inputs A and for the circuit shown in
Ans: (a, c)
5.
the following figure.
(a) å = E& + ¡ä)E&̅ + ¡) (b) å = E&̅ + ¡ä )

(c) å = &¡ä + &̅¡ ääää + &¡
(d) å = &¡
In Boolean Algebra Eäääääääääääää

æ+ æ ). d will be equal to.
Ans: (c)
A
(a) E&̅. ¡ ) + ̅ (b) E&. ¡ä) + (c) E&¡ ) + (d) & + ¡ä +
6.
Ans: (c)
ääääääääääääääääää
æ + A is equivalent to
7. The Boolean expression
A + A
(a) & (b) &̅ (c) 1 (d) Zero
In the given circuit, if the inputs A = = then what are the logic states of d and
Ans: (d)
8.
respectively?
(a) 0, 1, or 1, 0 (b) 0,0 (c) 1, 1, (d) None of these

Ans: (b)
9. The logic circuit shown in the following figure yields the given truth table.
Truth table
A B y
1 1 1
0 1 1
1 0 1
0 0 0
Then X in the diagram will be
(a) NAND (b) X OR (c) AND (d) NOR

Ans: (a)
10. X and Y in figure I and II represents two sets (Shaded area)
The output represented by the set F, in figurfe III is realized by the

logic gate
(a) OR (b) NOT
(c) NOR (d) AND
Inputs given to a logic gae are A and B and its output X. If A = @ and = then ç = @,
Ans: (d)
11.
What type of gae this could be.
(a) AND or NOR (b) OR or NAND (c) NOT or NOR (d) AND
Ans: (b)
12. In the circuit given below, the output will be
(a) &¡ä + ¡ ̅ + &̅ (b) ¡& + & (c) &¡ ääää + &
ääää + ¡ ääää (d) None
Ans: (b)
13. Truth table.
A B C Y
0 0 0 1
0 0 1 0
0 1 0 1
0 1 1 0
1 0 0 0
1 0 1 0
1 1 0 1
Which one of the following gives the simplified Boolean expression for of the M-variable
1 1 1 1
(a) & ̅ + &¡ ääää + &¡ ̅ + &¡

(b) &
truth table given above?
ääääää &̅¡ ̅ + &¡

(c) &¡ ääääää + &̅¡ ̅ + &¡ ̅ + &¡
(d) &¡
Ans: (a)
36 | ELECTRONICS
14. What must be input in the above circuit to get output one?
(a) 110 (b) 101 (c) 100 (d) 010

Ans: (b)
15.
(a) &̅¡ä + &̅ + ¡ä ääää̅ + ¡

ääää + & ääää̅
Which one of the following gives the output F for the logic diagram above?
(b) &¡
(c) ääääääää
&+¡+& ääääääää
+ + ääääääää
+& (d) A+B+ ̅
Ans: (a)
16. The number of bits that a digital computer can process in parallel at a time is called.
(a) Byte (b) Binary digit (c) World Length (d) PACE
If the memory chip size is 3FN × @ bits, what is the number of chip required to make up 1
Ans: (c)
17.
kbyte of memory?
(a) 32 chips (b) 64 chips (c) 128 chips (d) 256 chips
æ
Which one of the sets of values given below does not satisfy the boolean relation = è
Ans: (a)
(a) P= 1, é = 1, K = 0 (b) = 1, é = 1, K = 1
18.
(c) = 0, é = 0, K = 0 (d) = 0, é = 0, K = 1
Ans: (b, d)
19. RAM and ROM are
(a) Charge coupled devices used in computer (b) Computer memories
(c) Logic gaes (d) Binary counters used in computers
Ans: (b)
20. In a ê-type ëÕ − ¹ flipflop shown along with the clock and input wave forms. The è
output of flip-flep was zero initially. Identify the correct output waveform.
(a) (b)
(c) (d)
In the circuit shown below, the ports è@ and è3 are in states è@ = @, è3 = . The circuit is
Ans: (b)
21.
now subjected to two complete clock pulses. The state of the ports, now become
(a) é5 = 1, éS = 0 (b) é5 = 0, éS = 1 (c) é5 = 1, éS = 1 (d) é5 = 0, éS = 0

Ans: (c)
éS = 1, ì = 1, Ý = 1, íÝ = 1 éS = 1
Hints: For JK Flipflop
é5 = 1, ì = 1, Ý = 1, íÝ = 1 é5 = 1
The registors è , èd , è , èA shown in the figure are initially in the state 1010 respectively.
An input sequence = @@ applied. After two clock pulses, the state of the shift register.
22.
(a) 1001 (b) 0100 (c) 0110 (d) 1010
Here é é é éÁ = 1010
Ans: (d)
O = 0101
Hints:
For 1st clock pulse and 2nd clock pulse

38 | ELECTRONICS
è èd è èA
îïïïïïðïïïïïñ
State
Input
¦´ZÏZò
1 0 1 0
0 0 1 0 1
1 1 0 1 0
0 Final result
1
23. Ultraviolet light is used for erasing which memory in a computer?
(a) RAM (b) EEPROM (c) EPROM (d) ROM
A pulse is applied to each input of a 2 input NAND gate, one pulse goes high at ³ = and goes
Ans: (c)
back low at ³ = @ <ó. The other pulse goes HIGH at ³ = . L<ó and goes back low at
24.
³ = M<ó. Output pulse can be described as follows.

(a) It goes High at Î = 0 and low at Î = 3 % (b) It goes High at Î = 0.8 and low at Î = 3 %
(c) It goes High at Î = 0.8 and low at Î = 1 % (d) It goes High at Î = 0.8 and low at Î = 1 %
Ans: (c)
Hints: Since the gate is NAND gate
A pulse is applied to each of an EX-OR gate. One pulse goes high at ³ = and goes back low
at ³ = @. The other pulse goes high at ³ = . L and goes low at ³ = M. The output pulse can be
25.
(a) It goes high at Î = 0 and low at Î = 3% (b) It goes high at Î = 0 and low at Î = 0.8 %
described as follows.
(c) It goes high at Î = 1 and low at Î = 3% (d) None of these

Ans: (b, c).
26. K-MAP is used to
(a) Prepair the layout of a complicated circuit
(b) Faciliate addition and multiplication in a computer circuit
(c) Construct truth table (d) Reduce a digital logic circuit
Ans: (d)
27. The device used to convert a binary number to a Q-segment display format is
(a) Multiplexer (b) Encoder (c) Decoder (d) Register
Ans: (c)
28. The purpose of clock input to a flip-flop is to
(a) Clear the device (b) Set the device
(c) Always cause the output to change state
(d) Cause the output assume a state dependent on the controling (S-R, J-K or D).
Ans: (d)
29. For an edge-triggering D FF
(a) Change in the state of the FF can occur only at a clock pulse edge.
(b) The state that the FF goes depends and D input
(c) The output follows the input at each clock pulse
(d) None of those
Ans: (a, b, c)
30. A feature that distinguisches the J-K FF from the S-R FF
(a) Toggle condition (b) Present input (c) Type of clock (d) Clear input
A JKFF with ë = @ and Õ = @ has a @Õz{ clock input. The output is

Ans: (a)
31.
(c) A 10ÝÞß square wave (d) a 5 ÝÞß square wave

(a) Constantly HIGH (b) Constantly low
Ans: (a)
32. Teh number of FF needed to divide the input frequency by 32 bit.
(a) 2 (b) 4 (c) 5 (d) 8
A 4-bit tripple counter consists of FFs that each have a propagation delay from clock to è
Ans: (c)
(output) of @3<ó. For the counter to recycle from @@@@ to , it takes total time of
33.
(a) 12 (b) 24 (c) 38 (d) 36
A @ Õz{ clock frequency is applied cascaded counter consisting of a mod-5 counter, a mod-
Ans: (c)
34.
8 counter and two mod-10 counters. The lowest output frequency is possible.
(a) 10 KHz (b) 2.5 KHz (c) 5 KHz (d) 25 KHz
The overall modulus configuraiton for cascaded counter is 5 × 8 × 10 × 10 = 4000

Ans: (b)
Hints:
10ÐÞß 10 × 10*«
The lowest output frequency possible
= = 2.5ÝÞß.
4000 4 × 10s
With a @ Õz{ clock frequency, eight bits can be serially outered into a shift register in
(a) 80 (b) 8 (c) 80 (d) 10
35.
Ans: (a)
Pulse frequency = S66 × 10*s = 80.
ô
Hints:
40 | ELECTRONICS
36. When an 8-bit serial in/serial out register is used for a 3H·ó time delay, the clock frequency
(a) 41.76 ÝÞß (b) 333ÝÞß (c) 125ÝÞß (d) 8 ÐÞß

must be
Ans: (b)
Time delay for 1 bit = = 3
5¥
ô
Hints:
Clock frequency Æ = Þß = 333ÝÞß

S S«ö
õ s
37. The logic circuit given below converts a binary code @ 3 M
(a) Excess-3 code (b) Gray Code (c) BCD code (d) Hamming code
Ans: (b)
38. The maximumized expression for K-map is.
(a) ̅ ¡ä + ¡` + ` (b) &¡ + ¡ä + ¡ ̅ (c) ¡ä + & + & ̅ (d) ¡ ̅ + ` + ¡ä
Ans: (d)
39. The shift registor shown in thegiven figure is initially
loaded with the bit pattern 1010. Subsequenly the shift
register is clocked, and with each clock pulse the
pattern gets shifted by one bit position to the right. With
most position E·). After how many clock pulses will

each shift, the bit at the serial input is pushed to the left
the content of the shift register become 1010 again.

(a) 3 (b) 7
(c) 11 (d) 15
Ans: (b)
és é5 éS é6 åS å5
Hints:
1 0 1 0 1 1
1 1 0 1 0 1û
0 1 1 0 0 1ù ù
÷0 0 1 1 0 0 7 cycles
1 0 0 0 0 0ú
0 0 0 0 0 0ù ù
1 0 1 0 ø
d from the starting state of è3 è@ è = @@. The frequency of the output è3 è@ è will be.
40. A three stage Johnson counter is shown in teh figure below is clocked at a constant frequency
¾§ ¾§ ¾§ ¾§
ô « s 5
(a) (b) (c) (d)
ì5 Ý5 ìS ÝS ì6 Ý6 é5 éS é6

Ans: (d)
Hints:
1 0 1
0 1 1 0 0 1 0 1 0
1 0 0 1 1 0 1 0 1
0 1 1 0 0 1 0 1 0
1 0 0 1 1 0 1 0 1
¾§
5
It repeats after every two cycles so the frequency will be
41. Teh 8 bit shift register and − ¸¸ shown in teh figure is synonised with same clock. The
EFF is initially cleared. The circuit acts as
(a) Binary to 2′ complement convertor

(c) Binary to 1′ complement convertor (d) Binary to excess −3 convertor
(b) Binary to gray code convertor
Ans: (b)
Hints: The output of XOR gate is
42 | ELECTRONICS
ýZS ⊕ ýZ
After first clock å = ý଻ ⊕ ýZ 0 = ý଻
After 2nd clock å = ý଻ ⊕ ý«
After 3rd clock å = ý« ⊕ ý« ⊕ ý¬
Ater 4th clock å = ý¬ ⊕ ý¥
Hence it is a gray code converter.
42. The combination logic circuit shown in the figure has an output Q Which is
(a) &¡ (b) & + ¡ + (c) & ⊕ ¡ ⊕ (d) & ⊙ ¡ ⊙

Ans: (b)
43. The digital MUX is basically a combination at logic circuit to performance operatition
(a) AND-AND (b) OR-OR (c) AND-OR (d) OR-AND
Ans: (c)
44. The logic realized by the circuit shown in figure below is
(a) à = & (b) à = & ⊕ (c) à = ¡ (d) à = ¡ ⊕

Ans: (b)
à = OS̅ O6̅ 6 + OS̅ O6 S + OS O6̅ 5 + OS O6 s

Hints: We know that
Here 6 = S = OS = &
5 = s = ̅ O6 = ¡
à = &̅¡ä ̅ + &̅¡ + &¡ ̅ + &¡ä ̅
= &̅E¡ä + ¡ ) + &E¡ + ¡ä)
= &̅ + & ̅
=&⊕
45. The output the MUX
(a) & ⊕ ¡ (b) ääääääää

&⊕¡ (c) & ⊕ ¡ ⊕ (d) None of these
Ans: (d).

Ch-8 Analog MCQ and MSQ

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ANALOG MCQ AND MSQ |1

Chapter-8 Analog MCQ and MSQ

(c) Both depletion and enhancement mode for -channel only.

(a) 0, 0 (b) ∞, 0 (c) 0, ∞ (d) ∞, ∞

8.1.11. When the gate-to-source voltage

In a -channel MOSFET the drain current is due to flow of

(a) - junction

(c) - junction

(a)     with constant   (b)     with constant  

(c)     with different   (d)     with different  

(a) > 1 (b) < 1 (c) < 10

8.1.19. The gate voltage of an enhancement mode -channel MOSFET is

Ans: Positive (b) Negative

The threshold voltages of -channel MOSFET is

For small values of  , JFET behaves like

8.1.22. The gate source diode of a JFET should be

(b) - junction

(a) - junction

A forward biased - junction has a resistance about

(a) 10 − 20 (b) 10 − 20 (c) 10 − 20

The depletion region of a - junction consists

The barrier height at a - junction of germenium is about

(a) 3 (b) 3.5 (c) 0 (d) 0.3

A small reverse bias  junction has –

8.1.32. A - junction acts as a

(a) Unidirectional switch (b) Bidirectional switch

8.1.34. The leakage current across - junction is due to ____________

Resistance in a reverse biased - junction is about _______________

(a) 10 − 20 (b) 10 − 20 (c) 10 − 20

The leakage current in a real - junction is in order of _______________

(b) Few %& (c) Few &

(a) 2.4 (b) 3 (c) 3.1 (d) 0.7

An ideal - junction diode when forward biased be haves as a perfect.

A - Junction diode is __________ type of device.

A zener diode has __________ - junction.

8.1.47. Zener diode is used as

The depletion layer width of a - diode is about

(a) 0.5)% (b) 0.5%% (c) 0.5% (d) 0.5%

(c) Ordinary - diode(d) Photo diode

8.1.59. At high frequency for rectification ___________ is used.

- junction diode is used as photo detector when it is under ______________ .

Mains 01 power is converted into 21 power for ___________ .

8.1.69. The disadvantage of a half-wave rectifier is that the _____________ .

 (b) 200 (c) 200 × √2 .

(a) Pure 9) (c) Pure :) (c) :) + 9)

(a) To eliminate 9) component (b) To reduce :) component

(c) To increase efficiency (d) To maintaint he frequency constant

8.1.80. The application of zener diode is in the

cycle is < . The PIV at each diode is

(a) = (b) 2= (d) 4=

are ideal]. [JAM-PH-'05]

voltage is −2, the diode will get forward

biased and capacitor will get charged to 2

cycle, the input voltage will be +2 and the

diode will be reversed biased and the

8.1.87. A sine wave of F amplitude is applied at

In a - junction diode the current

voltage G = @F and power rating of 0.5W. If = H ,

the minimum value of in I that prevents the zener diode

(a) The width of depletion layers is larger on the -side.

(b) At thermal equilibrium the Fermi energy is higher on the -side.

(a) 9) source only

with a forward resistance of FI and with infinite

backward resistance. If the battery voltage is N . The

(a) - junction

(c) - junction

(a) with constant (b) with constant

(c) with different (d) with different

(a) > 1 (b) < 1 (c) < 10

8.1.19. The gate voltage of an enhancement mode -channel MOSFET is

For small values of , JFET behaves like

(b) - junction

(a) - junction

A forward biased - junction has a resistance about

(a) 10 − 20 (b) 10 − 20 (c) 10 − 20

The depletion region of a - junction consists

The barrier height at a - junction of germenium is about

(a) 3 (b) 3.5 (c) 0 (d) 0.3

A small reverse bias junction has –

8.1.32. A - junction acts as a

8.1.34. The leakage current across - junction is due to ____________

Resistance in a reverse biased - junction is about _______________

(a) 10 − 20 (b) 10 − 20 (c) 10 − 20

The leakage current in a real - junction is in order of _______________

(b) Few %& (c) Few &

(a) 2.4 (b) 3 (c) 3.1 (d) 0.7

An ideal - junction diode when forward biased be haves as a perfect.

A - Junction diode is __________ type of device.

A zener diode has __________ - junction.

The depletion layer width of a - diode is about

(a) 0.5)% (b) 0.5%% (c) 0.5% (d) 0.5%

(c) Ordinary - diode(d) Photo diode

- junction diode is used as photo detector when it is under ______________ .

(b) 200 (c) 200 × √2 .

(a) = (b) 2= (d) 4=

voltage is −2, the diode will get forward

biased and capacitor will get charged to 2

cycle, the input voltage will be +2 and the

In a - junction diode the current

voltage G = @F and power rating of 0.5W. If = H ,

(b) At thermal equilibrium the Fermi energy is higher on the -side.

with a forward resistance of FI and with infinite

(b) Doping pure OP with trivalent impurities given -type semiconductors.

8.1.103. In a - junction diode not connected to any circuit.

8.1.104. In a - junction with oepn ends.

the -side and from -side to the -side respectively.

8.1.105. In a junction diode.

(b) A -type semiconductor

(c) An -type semiconductor (d) A - junction

(a) Barrier potential of - junction is independent of temperature.

(d) Barriier potential depends on impurity concentration in and -type semiconductors.

(b) −= (c) −2= (d) −4=

8.1.114. What is the current through @I

the d voltage across c will be

e = EVoltage across load)

series to a HF d power supply. What is the series resistance required to obtain M

(a) 45 (b) 30 (c) 15 (d) 5

8.1.123. In an transistor, the current is carried by

8.1.125. In the transistors the majority carriers are

(a) = + (b) = + (c) = + (d) = −

8.1.131. d = ^ + ______________

(a) (b) (c) (d)

8.1.132. In a transistor d = 3N<A and ^ = 3@. F<A the value of .

8.1.133. Relation between and is.

(a) = S (b) = 1 − (c) = S (d) = S

8.1.134. The value of for a transistor is.

8.1.137. The value of is 0.99, the vlaue of will be –

E) and the mechanism is () _________________

(b) Changes in which increases with temperature

(a) Values of and when :) signal is applied.

(b) Values of and .

(d) Values of and before the application of :) signal.

(b) Is sensitive to changes in

(a) Change in (b) Change in

(a) 10 (b) 100 (c) 1 (d) 1

(a) To bypass the :) component across K to ground

8.1.158. The -parameter model of BJT is applicable at

8.1.160. p has the dimension of

8.1.161. p and p are dimension less because

(d) To increase the effect of K

Output voltage = 1 × 1%& = 1

Input voltage = 1%.

8.1.179. In previous question maximum when = F E = 3)w®¯°®±²E d^ )0³ x