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FACULTY OF TECHNOLOGY
MID-TERM EXAMINATION
APPLIED ELECTRONICS AND INSTRUMENTATION (EE 351)
FULL MARKS: 30 TIME ALLOWED: 45 MIN
All questions are compulsory
ii) If the voltage of the potential barrier is V0. A voltage V is applied to the input, at what moment will the barrier disappear?
a) V< V0
b) V= V0
c) V> V0
d) V<< V0
iii) During the reverse biased of the diode, the back resistance decrease with the increase of the temperature. Is it true or false?
a) True
b) False
iv) What will be the output of the following circuit? (Assume 0.7V drop across the diode)
a) 12V
b) 12.7V
c) 11.3V
d) 0V
v) In a P-N junction the potential barrier is due to the charges on either side of the junction, these charges are
a) Majority carriers
b) Minority carriers
c) Both (a) and (b)
d) Fixed donor and acceptor ions
vi) For a P-N junction diode, the current in reverse bias may be
a) Few mili-amperes
b) Between 0.2 A and 15 A
c) Few amperes
d) Few micro or nano amperes
x) A simple diode rectifier has ‘ripples’ in the output wave which makes it unsuitable as a DC source. To overcome this one can
use
a) A capacitor in series with a the load resistance
b) A capacitor in parallel to the load resistance
c) Both of the mentioned situations will work
d) None of the mentioned situations will work
a) Clipper
b) Clamper
c) Rectifier
d) None of the mentioned
xiv) Which of the following is true for a pnp transistor in active region?
a) CB junction is reversed bias and the EB junction is forward bias
b) CB junction is forward bias and the EB junction is forward bias
c) CB junction is forward bias and the EB junction is reverse bias
d) CB junction is reversed bias and the EB junction is reverse bias
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