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IRLB3034PbF
HEXFET Power MOSFET
Applications
l DC Motor Drive D VDSS 40V
l High Efficiency Synchronous Rectification in SMPS
RDS(on) typ. 1.4m:
1.7m:
l Uninterruptible Power Supply
max.
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
ID (Silicon Limited) 343A c
S ID (Package Limited) 195A
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
TO-220AB
SOA
IRLB3034PbF
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G D S
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 343 c
ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 243 c A
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 195
IDM Pulsed Drain Current d 1372
PD @TC = 25C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/C
VGS Gate-to-Source Voltage 20 V
dv/dt Peak Diode Recovery f 4.6 V/ns
TJ Operating Junction and
-55 to + 175
TSTG Storage Temperature Range
C
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw x x
10lbf in (1.1N m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e 255 mJ
IAR Avalanche Current d A
EAR Repetitive Avalanche Energy d See Fig. 14, 15, 22a, 22b,
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case j 0.4
RCS Case-to-Sink, Flat, Greased Surface 0.5 C/W
RJA Junction-to-Ambient 62
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IRLB3034PbF
Static @ TJ = 25C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, ID = 5mA d
1.4 1.7 VGS = 10V, ID = 195A g
RDS(on) Static Drain-to-Source On-Resistance
1.6 2.0
m
VGS = 4.5V, ID = 172A g
VGS(th) Gate Threshold Voltage 1.0 2.5 V VDS = VGS, ID = 250A
IDSS Drain-to-Source Leakage Current 20 VDS = 40V, VGS = 0V
A
250 VDS = 40V, VGS = 0V, TJ = 125C
IGSS Gate-to-Source Forward Leakage 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
RG(int) Internal Gate Resistance 2.1
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 286 S VDS = 10V, ID = 195A
Qg Total Gate Charge 108 162 ID = 185A
Qgs Gate-to-Source Charge 29 VDS = 20V
Qgd Gate-to-Drain ("Miller") Charge 54
nC
VGS = 4.5V g
Qsync Total Gate Charge Sync. (Qg - Qgd) 54 ID = 185A, VDS =0V, VGS = 4.5V
td(on) Turn-On Delay Time 65 VDD = 26V
tr Rise Time 827 ID = 195A
ns
td(off) Turn-Off Delay Time 97 RG = 2.1
tf Fall Time 355 VGS = 4.5V g
Ciss Input Capacitance 10315 VGS = 0V
Coss Output Capacitance 1980 VDS = 25V
Crss Reverse Transfer Capacitance 935 pF = 1.0MHz
Coss eff. (ER) Effective Output Capacitance (Energy Related) i 2378 VGS = 0V, VDS = 0V to 32V i
Coss eff. (TR) Effective Output Capacitance (Time Related) h 2986 VGS = 0V, VDS = 0V to 32V h
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current
c MOSFET symbol D
343
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
Notes:
Calcuted continuous current based on maximum allowable junction Pulse width 400s; duty cycle 2%.
temperature Bond wire current limit is 195A. Note that current Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitation arising from heating of the device leds may occur with as Coss while VDS is rising from 0 to 80% VDSS .
some lead mounting arrangements. Coss eff. (ER) is a fixed capacitance that gives the same energy as
Repetitive rating; pulse width limited by max. junction Coss while VDS is rising from 0 to 80% VDSS.
temperature. R is measured at TJ approximately 90C
Limited by TJmax, starting TJ = 25C, L = 0.013mH
RG = 25, IAS = 195A, VGS =10V. Part not recommended for use
above this value .
ISD 195A, di/dt 841A/s, VDD V(BR)DSS, TJ 175C.
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IRLB3034PbF
100000 100000
VGS VGS
TOP 15V 60s PULSE WIDTH TOP 15V 60s PULSE WIDTH
10V 10V Tj = 175C
8.0V Tj = 25C 8.0V
10000
ID, Drain-to-Source Current (A)
1000
100
100
10
2.5V 2.5V
1 10
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)
1000
T J = 175C 1.5
T J = 25C
100
(Normalized)
10
1.0
1
VDS = 25V
60s PULSE WIDTH
0.1 0.5
1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
100000 5.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED ID= 185A VDS= 32V
4.5
C rss = C gd VDS= 20V
VGS, Gate-to-Source Voltage (V)
C oss = C ds + C gd 4.0
Ciss 3.5
C, Capacitance (pF)
10000
Coss 3.0
2.5
Crss
2.0
1000
1.5
1.0
0.5
100 0.0
1 10 100 0 20 40 60 80 100 120 140
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRLB3034PbF
10000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100sec
100 1msec
T J = 175C
100 LIMITED BY PACKAGE
10msec
10
TJ = 25C
DC
10
1 Tc = 25C
Tj = 175C
VGS = 0V Single Pulse
1.0 0.1
0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage
46
200
150
44
100
42
50
0 40
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (C) T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.5 1200
EAS , Single Pulse Avalanche Energy (mJ)
ID
600
1.0
400
0.5
200
0.0 0
0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRLB3034PbF
1
Thermal Response ( Z thJC ) C/W
D = 0.50
0.1 0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (C/W) i (sec)
J C 0.02477 0.000025
0.02 J
1 0.08004 0.000077
0.01 2 3 4
0.01 1 2 3 4 0.19057 0.001656
Ci= i/Ri 0.10481 0.008408
Ci i/Ri
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
1000
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150C and
Tstart =25C (Single Pulse)
Avalanche Current (A)
100 0.01
0.05
0.10
10
2.5 12 V R = 34V
TJ = 25C
10 TJ = 125C
2.0
IRRM (A)
8
1.5
6
ID = 250A
1.0
ID = 1.0mA
4
ID = 1.0A
0.5
2
0.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500
T J , Temperature ( C ) diF /dt (A/s)
Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt
14 400
IF = 117A IF = 78A
12 V R = 34V V R = 34V
TJ = 25C TJ = 25C
300
10 TJ = 125C TJ = 125C
IRRM (A)
8
QRR (A)
200
6
4
100
0 0
0 100 200 300 400 500 0 100 200 300 400 500
diF /dt (A/s) diF /dt (A/s)
Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt
400
IF = 117A
V R = 34V
300 TJ = 25C
TJ = 125C
QRR (A)
200
100
0
0 100 200 300 400 500
diF /dt (A/s)
VGS=10V *
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple 5% ISD
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
RD
VDS VDS
VGS
90%
D.U.T.
RG
+
- VDD
V10V
GS 10%
Pulse Width 1 s VGS
Duty Factor 0.1 %
td(on) tr t d(off) tf
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Current Regulator Id
Same Type as D.U.T. Vds
Vgs
50K
12V .2F
.3F
+
V
D.U.T. - DS
Vgs(th)
VGS
3mA
IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
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IRLB3034PbF
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