PD - 95956

AUTOMOTIVE MOSFET
IRLR3705ZPbF
Features
IRLU3705ZPbF
l Logic Level
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance D
l 175°C Operating Temperature VDSS = 55V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
RDS(on) = 8.0mΩ
l Lead-Free G
Description
Specifically designed for Automotive applications, ID = 42A
S
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications. D-Pak I-Pak
IRLR3705Z IRLU3705Z
Absolute Maximum Ratings
Parameter Max. Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Silicon Limited) 89
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 63 A
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V (Package Limited) 42
I DM Pulsed Drain Current c 360
P D @T C = 25°C Power Dissipation 130 W
Linear Derating Factor 0.88 W/°C
V GS Gate-to-Source Voltage ± 16 V
E AS (Thermally limited) Single Pulse Avalanche Energyd 110 mJ
E AS (Tested ) Single Pulse Avalanche Energy Tested Value h 190
I AR Avalanche Current c See Fig.12a, 12b, 15, 16 A
E AR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
T STG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw y
10 lbf in (1.1N m)y
Thermal Resistance
Parameter Typ. Max. Units
R θJC Junction-to-Case j ––– 1.14
R θJA Junction-to-Ambient (PCB mount) ij ––– 40 °C/W
R θJA Junction-to-Ambient j ––– 110
HEXFET® is a registered trademark of International Rectifier.
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IRLR/U3705ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 6.5 8.0 mΩ VGS = 10V, ID = 42A e
––– ––– 11 VGS = 5.0V, ID = 34A e
––– ––– 12 VGS = 4.5V, ID = 21A e
VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 89 ––– ––– S VDS = 25V, ID = 42A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -16V
Qg Total Gate Charge ––– 44 66 ID = 42A
Qgs Gate-to-Source Charge ––– 13 ––– nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 22 ––– VGS = 5.0V e
td(on) Turn-On Delay Time ––– 17 ––– VDD = 28V
tr Rise Time ––– 150 ––– ID = 42A
td(off) Turn-Off Delay Time ––– 33 ––– ns RG = 4.2 Ω
tf Fall Time ––– 70 ––– VGS = 5.0V e
LD Internal Drain Inductance ––– 4.5 ––– Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance ––– 7.5 ––– from package
S
and center of die contact
Ciss Input Capacitance ––– 2900 ––– VGS = 0V
Coss Output Capacitance ––– 420 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 230 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1550 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 320 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 500 ––– VGS = 0V, VDS = 0V to 44V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 42 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 360 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 42A, VGS = 0V e
trr Reverse Recovery Time ––– 21 42 ns TJ = 25°C, IF = 42A, VDD = 28V
Qrr Reverse Recovery Charge ––– 14 28 nC di/dt = 100A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRLR/U3705ZPbF

1000 1000
VGS VGS
TOP 12V TOP 12V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
5.0V 5.0V
4.5V 4.5V
3.5V 3.5V
100 3.0V 100 3.0V
BOTTOM 2.8V BOTTOM 2.8V

2.8V
10 10
2.8V

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 100

TJ = 25°C TJ = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current(Α)

80
TJ = 175°C
100.0

60
TJ = 175°C

40
10.0

VDS = 15V 20
VDS = 8.0V
≤ 60µs PULSE WIDTH
1.0 380µs PULSE WIDTH
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0
0 10 20 30 40 50 60 70 80
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

vs. Drain Current
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5000 12
VGS = 0V, f = 1 MHZ ID= 42A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 44V

VGS, Gate-to-Source Voltage (V)

Crss = Cgd 10
4000 VDS= 28V
Coss = Cds + Cgd
VDS= 11V
C, Capacitance (pF)

8
3000 Ciss

2000
4

1000 2
Coss
Crss
0
0
1 10 100 0 20 40 60 80 100
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)

1000
100.0
TJ = 175°C

100
100µsec
10.0

10 1msec
TJ = 25°C
1.0 10msec
1 Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse
DC
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100

VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRLR/U3705ZPbF

100 2.5
ID = 42A

RDS(on) , Drain-to-Source On Resistance

LIMITED BY PACKAGE
VGS = 10V
80
2.0
ID , Drain Current (A)

60

(Normalized)
1.5
40

1.0
20

0
0.5
25 50 75 100 125 150 175
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TC , Case Temperature (°C)
TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Fig 10. Normalized On-Resistance

Case Temperature vs. Temperature

10
Thermal Response ( Z thJC )

1
D = 0.50

0.20
R1 R2
0.1
0.10 R1 R2 Ri (°C/W) τi (sec)
τJ τC
0.05 τJ τ 0.6984 0.000465
τ1 τ2
0.02 τ1 τ2 0.4415 0.004358
0.01 Ci= τi/Ri
0.01 Ci i/Ri

Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLR/U3705ZPbF

500
15V

EAS, Single Pulse Avalanche Energy (mJ)

ID
TOP 5.3A
DRIVER
400 7.0A
VDS L
BOTTOM 42A

RG D.U.T + 300
V
- DD
IAS A
VGS
20V
tp 0.01Ω 200

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS 100
tp

0
25 50 75 100 125 150 175

Starting TJ, Junction Temperature (°C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
QG

10 V
QGS QGD 2.5
ID = 250µA
VGS(th) Gate threshold Voltage (V)

VG ID = 150µA
2.0
ID = 50µA

Charge 1.5

Fig 13a. Basic Gate Charge Waveform

1.0

0.5
L
VCC
DUT
0 0.0
1K -75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature
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 IRLR/U3705ZPbF

1000

Duty Cycle = Single Pulse

100
Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

0.01
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
10 0.05 case should Tj be allowed to
0.10 exceed Tjmax

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

120 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
100 ID = 42A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

temperature far in excess of Tjmax. This is validated for

every part type.
80
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
60
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
40 avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
20 6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
vs. Temperature EAS (AR) = PD (ave)·tav
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IRLR/U3705ZPbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD
VDS

VGS
D.U.T.
RG
+
-VDD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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D-Pak (TO-252AA) Package Outline

D-Pak (TO-252AA) Part Marking Information

EXAMPLE: T HIS IS AN IRFR120
PART NUMBER
WIT H AS S EMBLY INT ERNATIONAL
LOT CODE 1234 RECT IFIER IRFU120 DAT E CODE
AS S EMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999
IN THE AS S EMBLY LINE "A" 12 34 WEEK 16
LINE A
Note: "P" in ass embly line position AS S EMBLY
indicates "Lead-Free" LOT CODE

OR
PART NUMBER
INT ERNATIONAL
RECT IFIER IRFU120 DAT E CODE
LOGO P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
12 34
YEAR 9 = 1999
AS S EMBLY WEEK 16
LOT CODE
A = AS S EMBLY S IT E CODE

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IRLR/U3705ZPbF

I-Pak (TO-251AA) Package Outline

I-Pak (TO-251AA) Part Marking Information

E XAMPL E : T HIS IS AN IR F U 120 PAR T NU MB E R
INT E R NAT IONAL
WIT H AS S E MB L Y
R E CT IF IE R IR F U 120 DAT E CODE
L OT CODE 5678
L OGO 919A YE AR 9 = 1999
AS S E MB L E D ON WW 19, 1999
56 78 WE E K 19
IN T H E AS S E MB L Y L INE "A"
L INE A
AS S E MB L Y
Note: "P" in as s embly line
L OT CODE
pos ition indicates "L ead-F ree"

OR
PAR T NU MB E R
INT E R NAT IONAL
R E CT IF IE R IRF U120 DAT E CODE
L OGO P = DE S IGNAT E S L E AD-F R E E
56 78 PR ODU CT (OPT IONAL )
YE AR 9 = 1999
AS S E MB L Y WE E K 19
L OT CODE A = AS S E MB L Y S IT E CODE

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 IRLR/U3705ZPbF

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters
TR TRR TRL

16.3 ( .641 ) 16.3 ( .641 )

15.7 ( .619 ) 15.7 ( .619 )

12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 )

FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25Ω, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
ˆ Rθ is measured at TJ approximately 90°C

Data and specifications subject to change without notice.

This product has been designed for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
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