Ordering number : ENA0440 SCH2811

SANYO Semiconductors
DATA SHEET
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
SCH2811 General-Purpose Switching Device
Applications
Features
• Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package
facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.
• [SBD]
• Short reverse recovery time.

• Low forward voltage.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID --1.0 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --4.0 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V
Average Output Current IO 0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 3 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Marking : QL

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82306 / 61506PE MS IM TB-00002321 No. A0440-1/6

 SCH2811

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
[MOSFET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance yfs VDS=--10V, ID=--0.5A 0.57 0.95 S
RDS(on)1 ID=--0.5A, VGS=--10V 320 420 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--0.3A, VGS=--4V 590 830 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 104 pF
Output Capacitance Coss VDS=--10V, f=1MHz 22 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 17 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12.5 ns
Rise Time tr See specified Test Circuit. 24 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 12 ns
Fall Time tf See specified Test Circuit. 12.2 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.0A 3.3 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.0A 0.48 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.0A 0.45 nC
Diode Forward Voltage VSD IS=--1.0A, VGS=0V --0.91 --1.5 V
[SBD]
Reverse Voltage VR IR=0.5mA 30 V
Forward Voltage VF IF=0.5A 0.42 0.48 V
Reverse Current IR VR=15V 120 µA
Interterminal Capacitance C VR=10V, f=1MHz 13 pF
Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns

Package Dimensions Electrical Connection

unit : mm
7028-003
6 5 4 1 : Gate
2 : Source
1.6
3 : Anode
0.2
0.05

0.2 4 : Cathode
6 5 4
5 : Drain
6 : Drain
1.6
1.5

1 2 3 Top view
1 2 3
0.05

0.5
0.56

1 : Gate
2 : Source
3 : Anode
4 : Cathode
0.25

5 : Drain
6 : Drain

SANYO : SCH6

No. A0440-2/6
 SCH2811

Switching Time Test Circuit trr Test Circuit

[MOSFET] [SBD]

VIN VDD= --15V Duty≤10%

0V

100mA

10mA
--10V
ID= --0.6A
VIN RL=25Ω 50Ω 100Ω 10Ω

100mA
D VOUT
PW=10µs 10µs
D.C.≤1%
--5V
G
trr

SCH2811
P.G 50Ω S

ID -- VDS [MOSFET] ID -- VGS [MOSFET]

--1.2 --2.0

°C
VDS= --10V

C
.0V

.0V

--25

25°
C
.0V

--1.8

75°
0

--6

--4
--1

--1.0

Ta=
--1.6
Drain Current, ID -- A

Drain Current, ID -- A

--1.4
--0.8

--3.0V --1.2

--0.6 --1.0

--0.8
--0.4
VGS= --2.5V --0.6
°C
25

--0.4
°C
75°

--0.2
=
Ta

--25

--0.2

0 0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5
Drain-to-Source Voltage, VDS -- V IT07278 Gate-to-Source Voltage, VGS -- V IT07280
RDS(on) -- VGS [MOSFET] RDS(on) -- Ta [MOSFET]
1200 1200
Ta=25°C
On-State Resistance, RDS(on) -- mΩ
On-State Resistance, RDS(on) -- mΩ

1000 1000

800 800
= --4V
mA , VGS
Static Drain-to-Source
Static Drain-to-Source

I D= --300
600 --500mA 600

ID= --300mA
= --10V
400 400 mA, V GS
I D= --500

200 200

0 0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V IT11174 Ambient Temperature, Ta -- °C IT11175

No. A0440-3/6
 SCH2811
yfs -- ID [MOSFET] IS -- VSD [MOSFET]
5 3
VDS= --10V VGS=0V
2
Forward Transfer Admittance, yfs -- S

3
--1.0
2 7

Source Current, IS -- A
5
°C
1.0 25 3

5 °C
5°C
2
7

C
-2

C
7
=-

--25°
Ta=

25 °
Ta
75°
5 C --0.1
7
3 5

2 3
2

0.1 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
Drain Current, ID -- A IT07286 Diode Forward Voltage, VSD -- V IT07288
SW Time -- ID [MOSFET] Ciss, Coss, Crss -- VDS [MOSFET]
3 3
VDD= --15V f=1MHz
2
VGS= --10V 2
Switching Time, SW Time -- ns

100

Ciss, Coss, Crss -- pF

7 Ciss
100
5
7
3
tf

2 5
td(off)
td(on)
10 3
7 tr
Coss
2
5
Crss
3
2 10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --5 --10 --15 --20 --25 --30
Drain Current, ID -- A IT07290 Drain-to-Source Voltage, VDS -- V IT07292
VGS -- Qg [MOSFET] ASO [MOSFET]
--10 7
VDS= --10V 5 IDP= --4A ≤10µs
--9 ID= --1.0A 3

10
Gate-to-Source Voltage, VGS -- V

0µ s
2

s
1m
--8
ID= --1A
Drain Current, ID -- A

--7 --1.0 10
m
7 s
DC

10

--6 5
0m
op

s
er

3
ati

--5
on

2
(T

--4
a=

--0.1
25
°C

--3 7 Operation in this

)

5 area is limited by RDS(on).

--2
3
Ta=25°C
--1 2 Single pulse
--0.01
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Total Gate Charge, Qg -- nC IT11176 Drain-to-Source Voltage, VDS -- V IT11177
PD -- Ta [MOSFET]
0.8
Allowable Power Dissipation, PD -- W

0.6 M
ou
nte
do
na
ce
ram
0.4
ic
bo
ard
(9
00
mm
2
0.2 ✕0
.8m
m)
1u
nit
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT11178

No. A0440-4/6
 SCH2811
IF -- VF [SBD] IR -- VR [SBD]
1.0 100000
7
7 5
3
5 2
5 °C
10000
7 Ta=12

Reverse Current, IR -- µA
Forward Current, IF -- A

3 5
3 100°C
2 2
1000
7 75°C
5
0.1 3
2 50°C
7
100
7
5 5
3 25°C
°C

2
°C

3
125

75°C

10
50 ° C
100

7
25 ° C

2 5
Ta=

3
2
0.01 1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30
Forward Voltage, VF -- V IT07927 Reverse Voltage, VR -- V IT07928
PF(AV) -- IO [SBD] C -- VR [SBD]
Average Forward Power Dissipation, PF(AV) -- W

0.35 100
Rectangular wave f=1MHz
7
0.30 (1) (2) (4) (3)

Interterminal Capacitance, C -- pF
θ 5
360°
0.25
Sine wave 3

0.20
2
180°
0.15 360°

10
0.10
(1) Rectangular wave θ=60° 7

0.05
(2) Rectangular wave θ=120° 5
(3) Rectangular wave θ=180°
0
(4) Sine wave θ=180° 3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
Average Output Current, IO -- A IT08187 Reverse Voltage, VR -- V IT07891
IFSM -- t [SBD]
3.5
Current waveform 50Hz sine wave
Surge Forward Current, IFSM(Peak) -- A

3.0
IS

2.5 20ms
t
2.0

1.5

1.0

0.5

0
7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s ID00338

No. A0440-5/6
 SCH2811

Note on usage : Since the SCH2811 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.

This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.

PS No. A0440-6/6