Ordering number : ENN8397 EC4407KF

N-Channel Silicon MOSFET

EC4407KF General-Purpose Switching Device

Applications
Features
• Low ON-resistance.
• 1.8V drive.
• mounting height : 0.4mm.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID 1.3 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 4.8 A
Allowable Power Dissipation PD Mounted on a glass epoxy board 0.4 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 20 V
Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 10 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance yfs VDS=10V, ID=0.6A 0.96 1.6 S
RDS(on)1 ID=0.6A, VGS=4V 170 224 mΩ
Static Drain-to-Source On-State Resistance RDS(on)2 ID=0.3A, VGS=2.5V 240 333 mΩ
RDS(on)3 ID=0.1A, VGS=1.8V 335 475 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 100 pF
Output Capacitance Coss VDS=10V, f=1MHz 22 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 5.5 ns
Rise Time tr See specified Test Circuit. 9 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 19 ns
Fall Time tf See specified Test Circuit. 7.5 ns
Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71505PE MS IM TB-00001523 No.8397-1/4
 EC4407KF
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.3A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.3A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.3A 0.4 nC
Diode Forward Voltage VSD IS=1.3A, VGS=0V 0.89 1.2 V

Package Dimensions
unit : mm
7043-001

Top View
0.8

4 3
1.2

1 2

Polarity Discriminating Mark

0.4

0.5
0.2
0.3

1 2 1 : Gate
2 : Source
0.75

3 : Drain
3
4 : Drain
4

Bottom View SANYO : ECSP1208-4-F

Type No. Indication(Top view) Electrical Connection(Top view)

Polarity mark (Top)

KA Gate
Drain
Source
*Electrodes : on the bottom

Switching Time Test Circuit

VDD=10V

VIN
4V ID=0.6A
0V RL=16.7Ω

VIN D VOUT
PW=10µs
D.C.≤1%
G

P.G 50Ω
EC4407KF
S

No.8397-2/4
 EC4407KF
ID -- VDS ID -- VGS
1.3 2.0
VDS=10V

5.0V

°C
V
.5V

V
1.2

°C
2.5
=1

1.8

--25
1.8
V GS

25
6.0V
1.1

Ta=

°C
1.6

3.0V

75
1.0
Drain Current, ID -- A

Drain Current, ID -- A
0.9 8.0V 1.4

0.8

4 .0 V
1.2
0.7
1.0
0.6
0.5 0.8

C
0.4

75°
0.6

°C
Ta=
0.3

°C --25
0.4
0.2
0.2
0.1

25
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS -- V IT09818 Gate-to-Source Voltage, VGS -- V IT02984
RDS(on) -- VGS RDS(on) -- Ta
700 700
Ta=25°C
On-State Resistance, RDS(on) -- mΩ

On-State Resistance, RDS(on) -- mΩ

600 600

500 500
300mA
=1.8V
400 600mA 400 , V GS
Static Drain-to-Source

Static Drain-to-Source
00mA
I D=1
2.5V
300 ID=100mA 300 V S=
= 3 0 0mA, G
ID
=4.0V
mA, V GS
200 200 I D=600

100 100

0 0
0 1 2 3 4 5 6 7 8 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V IT09819 Ambient Temperature, Ta -- °C IT09820
yfs -- ID IS -- VSD
10 10
7 VDS=10V 7 VGS=0
Forward Transfer Admittance, yfs -- S

5 5
3 3
2 °C 2
25
Source Current, IS -- A

1.0 1.0
5°
C
7 7
--2
5°
5 = C 5
Ta
5°C

7
C

3 3
°C
7
25°
Ta=

2 2
--25

0.1 0.1
7 7
5 5
3 3
2 2

0.01 0.01
0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Drain Current, ID -- A IT02987 Diode Forward Voltage, VSD -- V IT02988
SW Time -- ID Ciss, Coss, Crss -- VDS
100 1000
VDD=10V f=1MHz
7 7
VGS=4V
5 5
Switching Time, SW Time -- ns

3
Ciss, Coss, Crss -- pF

3
tr

td(off)
2 2

Ciss
10 100
tf
7 td(on) 7
5 5

3 3
Coss
2 2
Crss

1.0 10
0.1 2 3 5 7 1.0 2 3 5 0 2 4 6 8 10 12 14 16 18 20
Drain Current, ID -- A IT02989 Drain-to-Source Voltage, VDS -- V IT02990

No.8397-3/4
 EC4407KF
VGS -- Qg ASO
10 10
VDS=10V 7 IDP=4.8A ≤10µs
9 ID=1.3A 5
Gate-to-Source Voltage, VGS -- V

3
8
2
ID=1.3A

1m
Drain Current, ID -- A
7 10

s
1.0 m
7 10 s
6
5 D 0m
C s
5
op
3 er
at
2 io
4 n
0.1 Operation in this
3
7 area is limited by RDS(on).
5
2
3 Ta=25°C
1 2 Single pulse
0.01
Mounted on a glass epoxy board
0
0 1 2 3 4 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Total Gate Charge, Qg -- nC IT09221 Drain-to-Source Voltage, VDS -- V IT09222
PD -- Ta
0.45
Allowable Power Dissipation, PD -- W

0.40

0.35
M
ou
0.30 nt
ed
on
0.25 ag
las
0.20
se
po
xy
0.15 bo
ar
d
0.10

0.05

0
0 20 40 60 80 100 120 140 160
Amibient Tamperature, Ta -- °C IT09223

Note on usage : Since the EC4407KF is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2005. Specifications and information herein are subject
to change without notice.

PS No.8397-4/4