Ordering number : ENN8332 2SK3615

N-Channel Silicon MOSFET

2SK3615 General-Purpose Switching Device

Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 12 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 48 A
1 W
Allowable Power Dissipation PD
Tc=25°C 20 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Gate-to-Source Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance yfs VDS=10V, ID=6A 4.8 8 S
RDS(on)1 ID=6A, VGS=10V 45 60 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=6A, VGS=4V 60 85 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 790 pF
Output Capacitance Coss VDS=20V, f=1MHz 115 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 88 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise Time tr See specified Test Circuit. 40 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 70 ns
Fall Time tf See specified Test Circuit. 60 ns
Marking : K3615 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62005PA MS IM TB-00001381 No.8332-1/4

 2SK3615
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Total Gate Charge Qg VDS=30V, VGS=10V, ID=12A 16 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=12A 4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=12A 3.4 nC
Diode Forward Voltage VSD IS=12A, VGS=0V 1.0 1.2 V

Package Dimensions Package Dimensions

unit : mm unit : mm
7518-004 7003-004

6.5 2.3 6.5 2.3

5.0 0.5 5.0 0.5
1.5

1.5
4 4
7.0

7.0
5.5

5.5

1.2
0.85 0.85 0.5
0.7

2.5
1.2

0.8
0.8
1.6

1 2 3
7.5

0.6 0.5 0.6 0 to 0.2

1 : Gate 1 : Gate
1.2
2 : Drain 2 : Drain
1 2 3
3 : Source 3 : Source
4 : Drain 4 : Drain
2.3 2.3

2.3 2.3 SANYO : TP SANYO : TP-FA

Switching Time Test Circuit

VDD=30V

VIN
10V ID=6A
0V RL=5Ω

VIN D VOUT
PW=10µs
D.C.≤1%
G

P.G 50Ω
2SK3615
S

ID -- VDS ID -- VGS
5.0 10
VDS=10V
V
3.5

4.5 9
.0V
10V 8.0V 6

4.0 8
4.0V

VGS=3.0V
Drain Current, ID -- A
Drain Current, ID -- A

3.5 7
V
5.0

3.0 6

2.5 5

2.0 4
5°C
--25°C

1.5 3
7
Ta=
C

1.0 2
25°

0.5 1

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain-to-Source Voltage, VDS -- V IT05210 Gate-to-Source Voltage, VGS -- V IT05211

No.8332-2/4
 2SK3615
RDS(on) -- VGS RDS(on) -- Ta
150 120
140 Ta=25°C
110
ID=6A
On-State Resistance, RDS(on) -- mΩ

On-State Resistance, RDS(on) -- mΩ

130
120 100

110 90
100
80 4V
90
V G S=
Static Drain-to-Source

Static Drain-to-Source
70 ,
80 6A V
70 I D= =10
60
, V GS
60 6A
50
50 I D=
40 40
30 30
20
20
10
0 10
0 2 4 6 8 10 12 14 16 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, VGS -- V IT09341 Ambient Temperature, Ta -- °C IT09342
yfs -- ID IS -- VSD
10 10
VDS=10V 7 VGS=0V
Forward Transfer Admittance, yfs -- S

7 5
5 3
2
3

Source Current, IS -- A
1.0
5°
2 C
7
--2

C
5°C

C
° C °C 5

--25°
25°
=
25 Ta 75

7
1.0

Ta=
3
7 2

5 0.1
7
3 5

2 3
2

0.1 0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.2 0.4 0.6 0.8 1.0 1.2
Drain Current, ID -- A IT05214 Diode Forward Voltage, VSD -- V IT05215
SW Time -- ID Ciss, Coss, Crss -- VDS
5 3
VDD=30V f=1MHz
3 2
VGS=10V
2
Switching Time, SW Time -- ns

1000 Ciss
100 td(off)
Ciss, Coss, Crss -- pF

7 7
tf
5
5
3
tr 3
2
td(on) 2
10 Coss
7 Crss
5 100

3 7
2 5

1.0 3
0.1 2 3 5 7 1.0 2 3 5 7 10 0 5 10 15 20 25 30
Drain Current, ID -- A IT05216 Drain-to-Source Voltage, VDS -- V IT05217
VGS -- Qg ASO
10 100
VDS=30V 7 IDP=48A
<1

9 ID=12A 5
0µ
Gate-to-Source Voltage, VGS -- V

10

3
8
0µ

2
s

ID=12A
Drain Current, ID -- A

1m s

7
10 0ms

10
s
m
10

6 7
DC

5
op

5 3
er
ati

2
o

4
n
(T

1.0
c=

3 Operation in this area

2

7
5°

is limited by RDS(on).
C)

5
2
3
1 2 Ta=25°C
Single pulse
0 0.1
0 2 4 6 8 10 12 14 16 18 20 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Total Gate Charge, Qg -- nC IT09343 Drain-to-Source Voltage, VDS -- V IT09344

No.8332-3/4
 2SK3615
PD -- Ta PD -- Tc
1.2 25

Allowable Power Dissipation, PD -- W

Allowable Power Dissipation, PD -- W

1.0
20

0.8
15

0.6

10
0.4

5
0.2

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT09345 Case Temperature, Tc -- °C IT09346

Note on usage : Since the 2SK3615 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.

PS No.8332-4/4