Ordering number : ENN7712 2SJ655

P-Channel Silicon MOSFET

2SJ655 General-Purpose Switching Device

Applications
Features
• Low ON-resistance.
• 4V drive.
• Ultrahigh-speed switching.
• Motor drive, DC / DC converter.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID --12 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --48 A
2.0 W
Allowable Power Dissipation PD
Tc=25°C 25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --100 V
Zero-Gate Voltage Drain Current IDSS VDS=--100V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance yfs VDS=--10V, ID=--6A 9 13 S
RDS(on)1 ID=--6A, VGS=--10V 100 136 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--6A, VGS=--4V 136 190 mΩ
Input Capacitance Ciss VDS=--20V, f=1MHz 2090 pF
Output Capacitance Coss VDS=--20V, f=1MHz 155 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 108 pF
Marking : J655 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

61504QB TS IM TA-3854 No.7712-1/4

 2SJ655
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns
Rise Time tr See specified Test Circuit. 95 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 187 ns
Fall Time tf See specified Test Circuit. 95 ns
Total Gate Charge Qg VDS=--50V, VGS=--10V, ID=--12A 41 nC
Gate-to-Source Charge Qgs VDS=--50V, VGS=--10V, ID=--12A 7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--50V, VGS=--10V, ID=--12A 9 nC
Diode Forward Voltage VSD IS=--12A, VGS=0 --0.88 --1.2 V

Package Dimensions Switching Time Test Circuit

unit : mm
2063A
VIN VDD= --50V
0V
4.5 --10V
10.0 2.8 ID= --6A
3.2 VIN
3.5

RL=8.33Ω
7.2

D VOUT
16.0

PW=10µs
D.C.≤1%
18.1

2.4
5.6

1.6
2SJ655
1.2 P.G 50Ω S
14.0

0.7
0.75

1 2 3
1 : Gate
2.55 2.55 2 : Drain
2.4

3 : Source

2.55 2.55 SANYO : TO-220ML

ID -- VDS ID -- VGS
--25 --25
Tc=25°C VDS= --10V
5°C

C
0V

V
75°
V

--4
2
--1

--6
V

Tc= --
--8

--20 --20
25°C
Drain Current, ID -- A

Drain Current, ID -- A

--15 --15

--10 --10
5°C

VGS=--3V
7
Tc=

--5 --5
°C
C
25°

--25

0 0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT05374 Gate-to-Source Voltage, VGS -- V IT05375

No.7712-2/4
 2SJ655
RDS(on) -- VGS RDS(on) -- Tc
300 250
ID= --6V
On-State Resistance, RDS(on) -- mΩ

On-State Resistance, RDS(on) -- mΩ

250
200
V
--4
200 V G S=
, V
-6 A --10
150
=- S=
Static Drain-to-Source

Static Drain-to-Source
ID , V G
150 Tc=75°C --6A
I D=
100
25°C
100
--25°C
50
50

0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT05376 Case Temperature, Tc -- °C IT05377
yfs -- ID IF -- VSD
100 --100
VDS= --10V 7 VGS=0
7 5
Forward Transfer Admittance, yfs -- S

3
5 2

Forward Drain Current, IF -- A

--10
3 7
5
2 3
2

°C
°C

°C

°C
--1.0
--25

75
10 7

25
25°

--25
C
Tc= 5

=
Tc
7 3
75°
C 2
5
--0.1
7
3 5
3
2 2
--0.01
7
1.0 5
3
7 2
5 --0.001
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 --0.3 --0.6 --0.9 --1.2
Drain Current, ID -- A IT05378 Diode Forward Voltage, VSD -- V IT05379
SW Time -- ID Ciss, Coss, Crss -- VDS
1000 5
VDD= --50V f=1MHz
7
VGS= --10V 3
5 Ciss
Switching Time, SW Time -- ns

2
3
Ciss, Coss, Crss -- pF

td(off)
2
1000

7
100 tf
5
7
tr
5 3

3 2 Coss

2 td(on) Crss
100
10 7
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 0 --5 --10 --15 --20 --25 --30
Drain Current, ID -- A IT05380 Drain-to-Source Voltage, VDS -- V IT05381
VGS -- Qg ASO
--10 --100
VDS= --50V 7 IDP= --48A <10µs
--9 ID= --12A 5
10
Gate-to-Source Voltage, VGS -- V

3 ID= --12A 10 µs
--8 0µ
2 s
Drain Current, ID -- A

--7 1m
--10 s
--6 7 10
5 ms
10
--5 3 DC 0 ms
2 op
--4 Operation in this area era
tio
--1.0 is limited by RDS(on). n
--3 7
5
--2
3
--1 2 Tc=25°C
0 --0.1
Single pulse
0 5 10 15 20 25 30 35 40 45 --1.0 2 3 5 7 --10 2 3 5 7 --100 2
Total Gate Charge, Qg -- nC IT05382 Drain-to-Source Voltage, VDS -- V IT05383

No.7712-3/4
 2SJ655
PD -- Ta PD -- Tc
Allowable Power Dissipation, PD -- W 2.5 35

Allowable Power Dissipation, PD -- W

30
2.0

25

1.5
20

15
1.0

10

0.5
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT05384 Case Temperature, Tc -- °C IT05385

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
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or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2004. Specifications and information herein are subject
to change without notice.

PS No.7712-4/4
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