Silicon N-Channel Power MOSFET

○
R

CS840 A8H
General Description： VDSS 500 V
CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A
is obtained by the self-aligned planar Technology which reduce PD (T C=25℃) 110 W

the conduction loss, improve switching performance and R DS(ON)Typ 0.57 Ω

enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which accords
with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.75Ω)
l Low Gate Charge (Typical Data:28nC)

l Low Reverse transfer capacitances(Typical:18pF)

l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 500 V
Continuous Drain Current 8 A
ID
Continuous Drain Current T C = 100 °C 6.2 A
a1
IDM Pulsed Drain Current 32 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 620 mJ
a1
EAR Avalanche Energy ,Repetitive 60 mJ
a1
I AR Avalanche Current 3.5 A
a3
dv/dt Peak Diode Recovery dv/dt 5 V/ns
Power Dissipation 110 W
PD
Derating Factor above 25°C 0.88 W/℃
TJ ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 500 -- -- V
ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.74 -- V/℃
VDS = 500V, V GS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =400V, V GS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =4.0A -- 0.57 0.75 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance VDS=15V, ID =4.0A -- 10 -- S
C iss Input Capacitance -- 1253 --
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 130 -- pF
C rss Reverse Transfer Capacitance -- 18 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 18 --
tr Rise Time ID =8.0A VDD = 250V -- 32 --
VGS = 10V RG = 25Ω ns
td(OFF) Turn-Off Delay Time -- 80 --
tf Fall Time -- 38 --
Qg Total Gate Charge -- 28
ID =8.0A V DD =250V
Qgs Gate to Source Charge VGS = 10V -- 7 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 11 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 8 A
I SM Maximum Pulsed Current (Body Diode) -- -- 32 A
VSD Diode Forward Voltage IS =8.0A,V GS =0V -- -- 1.5 V
trr Reverse Recovery Time IS =8.0A,Tj = 25°C -- 206 ns
dIF /dt=100A/us,
Qrr Reverse Recovery Charge V GS=0V -- 1.1 uC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θJC Junction-to-Case 1.14 ℃/W
R θJA Junction-to-Ambient 62.5 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10.0mH, ID=11.1A, Start T J =25℃
a3
：ISD =8A,di/dt ≤100A/us,V DD≤BVDS, Start TJ =25℃

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Characteristics Curve：
100 120

110
Id,Drain Current,Amps

10 100

Pd , Power Dissipation ,Watts

100μs
90
1ms
1 80
DC 10ms 70
OPERATION IN THIS AREA
60
MAY BE LIMITED BY RDS(ON)
0.1 TJ=MAX RATED
50
TC=25℃ Single Pulse
40
0.01 30
1 10 100 1000 0 25 50 75 100 125 150
Vds,Drain Source Voltage,Volts Tc , Case Tem perature , C
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
9 16

VGS=10V
8
Id,Drain Source,Volts

12
Id , Drain Current ,Amps

7
VGS=8V
6 8

VGS=7V
5
4
4 VGS=6V

3 0
0 25 50 75 100 125 150 0 10 20 30 40 50
Tc , Case Temperature ,C Vds,Drain Source Voltage,Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics
1
Thermal impeddance,Normalized

50%

20%

10%
0.1 PDM
5% t1
t2
2%
NOTES：
1% DUTY FACTOR ：D=t1/ t2
Single pulse PEAK Tj=PDM*ZthJC*RthJC+TC

0.01
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration,seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case

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100
TRANSCONDUCTANCE MAY LIMIT
FOR TEMPERATURES
Idm , Peak Current , Amps

CURRENT IN THIS REGION

ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
 150 − TC 
I = I 25  
 125 
10

VGS=10V

1
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01
Pulse Width , Seconds
t
Figure 6 Maximun Peak Current Capability
16 3
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Id,Drain to source Current,Amps

2.5 Tc =25 ℃
Rds(on), Drain to Source ON

ID= 8A
12
ID= 4A
2
Resistance ,Ohms

VDS=25V
ID= 2A
8 1.5

1
4
0.5

0 0
0 2 4 6 8 10 4 6 8 10 12
Vgs,Gate to source Voltage,Volts Vgs , Gate to Source Voltage，Volts
Figure 7 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
1.2 2.5
Rds(on), Drain to Source ON

1 2 VGS=10V
Resistance,Normalized

ID=4.0A
VGS=10V

0.8 1.5

0.6 1

0.4 0.5

0.2 0
0 2 4 6 8 10 -100 -50 0 50 100 150 200
Id , Drain Current(A) Tj,Junction Temperature.C
Figure 9 Typical Drain to Source ON Resistance Figure 10 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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1.4

Bvdss,Drain to Source Breakdown Voltage,

1.13
VDS=VGS
1.2 ID=250μA
Vgs(th),Threshold Voltage

1.08
ID=1mA

Normalized
1 1.03

0.8 0.98

0.6 0.93

0.4 0.88
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Tj,Junction Temperature Tj, Junction temperature，C
Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature
1400 20

Vgs , Gate to Source Voltage ,Volts

1200 VGS=0V , f=1MHz
Ciss=Cgs+Cgd 16
Coss=Cds+Cgd
1000 Crss=Cgd
Capacitance , pF

VDS=400V
800 12
ID=8..0A

600 Ciss 8
400
Coss 4
200
Crss
0 0
0 10 20 30 40 50 60 0 5 10 15
Vds , Drain - Source Voltage , Volts Qg , Total Gate Charge , nC

Figure 13 Typical Capacitance vs Drain to Source Voltage Figure 14 Typical Gate Charge vs Gate to Source Voltage
12.5 100
Isd,Reverse Drain Current,Amps

Id , Drain Current , Amps

10 STARTING Tj = 25℃

10 STARTING Tj = 150℃
7.5

+150℃
5
+25℃
1
-55℃ If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)
2.5 If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit

0 0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
Vs,Source-Drain Voltage,Volts tav,Time in Avalanche,Seconds

Figure 15 Typical Body Diode Transfer Characteristics Figure 16 Unclamped Inductive Switching Capability

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Test Circuit and Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 10.00 10.60
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 3.30 3.80
L 12.7 14.7
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
TO-220AB Package
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The name and content of poisonous and harmful material in products

Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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