SAMWIN SW3205

N-channel MOSFET

Features TO-220 BVDSS : 55V

■ High ruggedness ID : 110A
■ RDS(ON) (Max 0.008 Ω)@VGS=10V RDS(ON) : 0.008 ohm
■ Gate Charge (Typ 146nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested 2
1
2
3
1
1. Gate 2. Drain 3. Source
General Description 3
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize RDS(ON), low gate charge and high rugged
avalanche characteristics.

Order Codes
Item Sales Type Marking Package Packaging
1 SW P 3205 SW3205 TO-220 TUBE

Absolute maximum ratings

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 55 V
Continuous Drain Current (@TC=25oC) 110 A
ID
Continuous Drain Current (@TC=100oC) 75 A
IDM Drain current pulsed (note 1) 390 A
VGS Gate to Source Voltage ± 20 V
EAS Single pulsed Avalanche Energy (note 2) 1270 mJ
EAR Repetitive Avalanche Energy (note 1) 20 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
Total power dissipation (@TC=25oC) 200 W
PD
Derating Factor above 25oC 1.3 W/oC
TSTG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC

Maximum Lead Temperature for soldering oC

TL 300
purpose, 1/8 from Case for 5 seconds.

Thermal characteristics
Value
Symbol Parameter Unit
Min. Typ. Max.
Rthjc Thermal resistance, Junction to case 0.75 oC/W

Rthcs Thermal resistance, Case to Sink 0.5 oC/W

Rthja Thermal resistance, Junction to ambient 62.5 oC/W

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SAMWIN SW3205
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol Parameter Test conditions Min. Typ. Max. Unit
Off characteristics
BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 55 - - V

ΔBVDSS Breakdown voltage temperature

ID=250uA, referenced to 25oC - 0.057 - V/oC
/ ΔTJ coefficient

VDS=55V, VGS=0V - - 1 uA
IDSS Drain to source leakage current
VDS=48V, TC=125oC - - 100 uA
Gate to source leakage current, forward VGS=20V, VDS=0V - - 100 nA
IGSS
Gate to source leakage current, reverse VGS=-20V, VDS=0V - - -100 nA
On characteristics
VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.0 - 4.0 V
RDS(ON) Drain to source on state resistance VGS=10V, ID = 59A 0.008 Ω
Dynamic characteristics
Ciss Input capacitance 3240 4250
Coss Output capacitance VGS=0V, VDS=25V, f=1MHz 780 1650 pF
Crss Reverse transfer capacitance 210 340
td(on) Turn on delay time 60
tr Rising time 70
VDS=28V, ID=59A, RG=25Ω ns
td(off) Turn off delay time 195
tf Fall time 120
Qg Total gate charge 100 125
Qgs Gate-source charge VDS=48V, VGS=10V, ID=110A 23 - nC
Qgd Gate-drain charge 36 -

Source to drain diode ratings characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
IS Continuous source current Integral reverse p-n Junction - - 110 A
ISM Pulsed source current diode in the MOSFET - - 390 A
VSD Diode forward voltage drop. IS=110A, VGS=0V - - 1.3 V
Trr Reverse recovery time IS=110A, VGS=0V, - 92 - ns
Qrr Breakdown voltage temperature dIF/dt=100A/us - 160 - nC
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 200uH, IAS = 110A, VDD = 25V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 110A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.

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 SAMWIN SW3205
Fig. 1. On-state characteristics Fig. 2. Transfer characteristics

VGS
Top : 15.0 V
10.0 V
2 8.0 V 2
10 10
7.0 V
6.0 V
5.5 V
ID, Drain Current [A]

ID, Drain Current [A]

5.0 V
Bottom : 4.5 V

o
175 C
1 1
10 10
o
25 C
o
،‫ ط‬Notes :
-55 C ،‫ ط‬Notes :
1. 250¥‫ى‬s Pulse Test 1. VDS = 25V
2. TC = 25،‫ة‬ 2. 250¥‫ى‬s Pulse Test
0 0
10 10
-1 0 1
10 10 10 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Fig. 3. On-resistance variation vs. Fig. 4. On state current vs.

drain current and gate voltage diode forward voltage

18

16
Drain-Source On-Resistance [m¥‫]ط‬

2
VGS = 20V 10
IDR, Reverse Drain Current [A]

14

12 VGS = 10V

10
RDS(ON),

8 1
10
6
175،‫ة‬
4 25،‫ة‬
،‫ ط‬Notes :
1. VGS = 0V
2
،‫ ط‬Note : TJ = 25،‫ة‬ 2. 250¥‫ى‬s Pulse Test
0
0 10
0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Fig. 5. Capacitance characteristics Fig. 6. Gate charge characteristics

(Non-Repetitive)

5500 12
Ciss=Cgs+Cgd(Cds=shorted) VDS = 30V
5000 Coss=Cds+Cgd
Crss=Cgd 10
4500 VDS = 48V
VGS, Gate-Source Voltage [V]

4000
8
،‫ ط‬Notes :
Capacitance [pF]

3500
1. VGS = 0V
3000 2. f=1MHz
Ciss 6
2500

2000
4
1500 Coss
1000 2
500 ،‫ ط‬Note : ID = 110 A
Crss
0 0
0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 70 80 90 100
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

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 SAMWIN SW3205
Fig 7. Breakdown Voltage Variation Fig. 8. On resistance variation
vs. Junction Temperature vs. junction temperature

3.0
1.2
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
BVDSS, (Normalized)

1.1

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ،‫ ط‬Notes :
1. VGS = 0 V
0.5 ،‫ ط‬Notes :
2. ID = 250 ¥‫ى‬A 1. VGS = 10 V
2. ID = 55 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig. 9. Maximum drain current vs. Fig. 10. Maximum safe operating area (TO-220)
case temperature.
3
10
120
Operation in This Area
is Limited by R DS(on)

100
100 s
ID, Drain Current [A]

2
10
ID' Drain Current [A]

80 1 ms
10 ms
60
DC

1
40 10
،‫ ط‬Notes :
o
1. TC = 25 C
20 o
2. TJ = 175 C
3. Single Pulse

0
0 10
25 50 75 100 125 150 175 -1
10 10
0
10
1
10
2

o
TC' Case Temperature [ C] VDS, Drain-Source Voltage [V]

Fig. 11. Transient thermal response curve

0
10
Z¥èJC(t), Thermal Response

D=0.5
،‫ ط‬Notes :
o
1. Z¥èJC(t) = 0.75 C/W Max.
0.2 2. Duty Factor, D=t1/t2
-1
10 0.1 3. TJM - TC = PDM * Z¥èJC(t)

0.05

0.02
0.01
single pulse
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1, Square Wave Pulse Duration [sec]

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SAMWIN SW3205

Fig. 12. Gate charge test circuit & waveform

Same type VGS

as DUT
QG

VDS
QGS QGD

DUT
VGS

1mA
Charge

Fig. 13. Switching time test circuit & waveform

VDS 90%
RL

RG VDS

VDD
VIN 10% 10%

10VIN DUT td(on) tr td(off) tf

tON tOFF

Fig. 14. Unclamped Inductive switching test circuit & waveform

1 BVDSS
EAS = L X IAS2 X
L 2 BVDSS - VDD
BVDSS
IAS
IAS
VDS
RG VDD
ID(t)
DUT
10VIN VDS(t)

tp time

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SAMWIN SW3205

Fig. 15. Peak diode recovery dv/dt test circuit & waveform

DUT + V VGS (DRIVER) 10V

DS

-
IS L di/dt
IS (DUT)

VDS IRM

RG VDD Diode reverse current

Diode recovery dv/dt

10VGS Same type
as DUT
VDS (DUT) VF VDD

*. dv/dt controlled by RG
*. Is controlled by pulse period Body diode forward voltage drop

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SAMWIN SW3205
REVISION HISTORY

Revision No. Changed Characteristics Responsible Date Issuer

REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ

REV 2.0 Updated the format of datasheet and added Alice Nie 2011.03.24 XZQ
Order Codes.

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