QM3004D

N-Ch 30V Fast Switching MOSFETs

General Description Product Summery

The QM3004D is the highest performance trench

N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID
which provide excellent RDSON and gate charge
30V 8.5mΩ 55A
for most of the synchronous buck converter
applications .
Applications
The QM3004D meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full z High Frequency Point-of-Load Synchronous
function reliability approved. Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features z Load Switch

z Advanced high cell density Trench technology TO252 Pin Configuration

z Super Low Gate Charge D
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Absolute Maximum Ratings S

G
Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 55 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 40 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 13.6 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 11.4 A
2
IDM Pulsed Drain Current 110 A
3
EAS Single Pulse Avalanche Energy 130 mJ
IAS Avalanche Current 34 A
PD@TC=25℃ Total Power Dissipation4 41 W
PD@TA=25℃ Total Power Dissipation4 2.42 W
TSTG Storage Temperature Range -55 to 175 ℃
TJ Operating Junction Temperature Range -55 to 175 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-ambient (Steady State) --- 62 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 3.6 ℃/W

Rev A.02 D051311

1
 QM3004D
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.027 --- V/℃
VGS=10V , ID=30A --- 7.5 8.5
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=4.5V , ID=15A --- 11 14
VGS(th) Gate Threshold Voltage 1.0 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5.8 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 38 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 3.5 Ω
Qg Total Gate Charge (4.5V) --- 12.6 17.6
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 4.2 5.9 nC
Qgd Gate-Drain Charge --- 5.1 7.1
Td(on) Turn-On Delay Time --- 4.6 9.2
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 12.2 22
ns
Td(off) Turn-Off Delay Time ID=15A --- 26.6 53
Tf Fall Time --- 8 16
Ciss Input Capacitance --- 1317 1843
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 163 228 pF
Crss Reverse Transfer Capacitance --- 131 183

Guaranteed Avalanche Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A 45 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 55 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2,6 --- --- 110 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time --- 9.2 --- nS
Qrr Reverse Recovery Charge IF=30A , dI/dt=100A/µs , TJ=25℃ --- 2 --- nC

Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A
4.The power dissipation is limited by 175℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

2
 QM3004D
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
100

75
ID Drain Current (A)

VGS=10V
VGS=7V
VGS=5V
50
VGS=4.5V

VGS=3V
25

0
0 0.5 1 1.5 2 2.5 3
VDS , Drain-to-Source Voltage (V)

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

12 10
ID =15A

TJ=150℃ TJ=25℃
8
VGS , Gate to Source Voltage (V)

6 VDS=15V
IS(A)

6 VDS=24V

0
0 0.3 0.6 0.9 1.2 0
VSD , Source-to-Drain Voltage (V) 0 6 12 18 24 30
QG , Total Gate Charge (nC)

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

1.8 1.8
Normalized On Resistance

1.4 1.4
Normalized VGS(th)

1 1.0

0.6 0.6

0.2 0.2
-50 25 100 175 -50 -5 40 85 130 175
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

3
 QM3004D
N-Ch 30V Fast Switching MOSFETs
10000 1000.00
F=1.0MHz

100.00 10us
Ciss
100us
Capacitance (pF)

1000
1ms
10.00
10ms

ID (A)
Coss 100ms
1.00
DC
100
Crss
0.10
TC=25℃
Single Pulse
10 0.01
1 5 9 13 17 21 25 0.1 1 10 100
VDS , Drain to Source Voltage (V) VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.3

0.1 0.1
0.05
PDM
0.02 TON
0.01 T
D = TON/T
SINGLE PULSE TJpeak = TC + PDM x RθJC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform