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Rating
Symbol Parameter 10s Steady State Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 60 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 38 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 20 12.7 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 16 10.2 A
2
IDM Pulsed Drain Current 180 A
3
EAS Single Pulse Avalanche Energy 252 mJ
IAS Avalanche Current 48 A
4
PD@TC=25℃ Total Power Dissipation 37 W
4
PD@TA=25℃ Total Power Dissipation 4.2 1.67 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
1
QM3006M3
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
2
QM3006M3
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
180
150
ID Drain Current (A)
120 VGS=10V
VGS=7V
90 VGS=5V
VGS=4.5V
VGS=3V
60
30
0
0 0.5 1 1.5 2 2.5 3
VDS , Drain-to-Source Voltage (V)
TJ=150℃ TJ=25℃ 8
VGS , Gate to Source Voltage (V)
6 VDS=15V
IS(A)
6 VDS=24V
3
2
0
0
0 0.3 0.6 0.9 1.2
0 6 12 18 24 30 36 42
VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC)
1.8 1.8
Normalized On Resistance
1.4 1.4
Normalized VGS(th)
1 1.0
0.6 0.6
0.2 0.2
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)
3
QM3006M3
N-Ch 30V Fast Switching MOSFETs
10000 1000.00
F=1.0MHz
100.00 10us
Ciss
Capacitance (pF)
1000 100us
10.00
ID (A)
Coss 1ms
10ms
1.00 100ms
100 Crss
DC
0.10
TC=25℃
Single Pulse
10 0.01
1 5 9 13 17 21 25 0.1 1 10 100
VDS , Drain to Source Voltage (V) VDS (V)
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 SINGLE PULSE PDM
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)