QM2710D

N-Ch 20V Fast Switching MOSFETs

General Description Product Summery

The QM2710D is the highest performance trench

N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID
which provide excellent RDSON and gate charge
20V 28mΩ 22A
for most of the small power switching and load
switch applications.
Applications
The QM2710D meet the RoHS and Green Product
requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features z Load Switch

z Advanced high cell density Trench technology TO-252 Pin Configuration

z Super Low Gate Charge D
z Excellent Cdv/dt effect decline
z Green Device Available

Absolute Maximum Ratings S

G
Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±16 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 4.5V 22 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 4.5V 14 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V 7 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V 5.5 A
2
IDM Pulsed Drain Current 60 A
3
PD@TC=25℃ Total Power Dissipation 21 W
3
PD@TA=25℃ Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-ambient --- 62 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 6 ℃/W

Rev A.02 D052311

1
 QM2710D
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.019 --- V/℃
VGS=4.5V , ID=15A --- 22 28
RDS(ON) Static Drain-Source On-Resistance2 mΩ
VGS=2.5V , ID=10A --- 30 38
VGS(th) Gate Threshold Voltage 0.5 0.7 1.2 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -2.9 --- mV/℃
VDS=16V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=16V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±16V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=15A --- 24.2 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.6 Ω
Qg Total Gate Charge (4.5V) --- 8.5 11.9
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 1.64 2.3 nC
Qgd Gate-Drain Charge --- 3.1 4.3
Td(on) Turn-On Delay Time --- 4.8 9.6
Tr Rise Time VDD=10V , VGS=10V , RG=3.3Ω --- 28.6 51
ns
Td(off) Turn-Off Delay Time ID=15A --- 19.6 39
Tf Fall Time --- 8.8 17.6
Ciss Input Capacitance --- 574 804
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 68.7 96 pF
Crss Reverse Transfer Capacitance --- 61 85

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,4
IS Continuous Source Current --- --- 22 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2,4 --- --- 60 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V
trr Reverse Recovery Time --- 4.8 --- nS
Qrr Reverse Recovery Charge IF=15A , dI/dt=100A/µs , TJ=25℃ --- 0.78 --- nC

Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

2
 QM2710D
N-Ch 20V Fast Switching MOSFETs
Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

12
IS Source Current(A)

TJ=150℃ TJ=25℃
4

0
0 0.3 0.6 0.9 1.2
VSD , Source-to-Drain Voltage (V)

Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics

1.8 1.8
Normalized On Resistance

1.4 1.4
Normalized VGS(th)

1 1.0

0.6 0.6

0.2 0.2
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃)

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

3
 QM2710D
N-Ch 20V Fast Switching MOSFETs

1000

Ciss
Capacitance (pF)

100
Coss
Crss

F=1.0MHz
10
1 4 7 10 13 16 19 22
VDS , Drain to Source Voltage (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.2

0.1
0.1

0.05 P DM T ON

T
0.02
D = TON/T
0.01
TJpeak = TC+P DMXRθJC
SINGLE
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform