Silicon N-Channel Power MOSFET

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R

CS3205 A8

General Description ： VDSS 60 V

CS3205 A8, the silicon N-channel Enhanced VDMOSFETs, ID（ Silicon limited current ） 120 A
P D (TC=25℃) 230 W
is obtained by the self-aligned planar Technology which reduce
RDS(ON)Typ 7 mΩ
the conduction loss, improve switching performance and
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
Features：
 Fast Switching
 Low ON Resistance(Rdson≤8mΩ)
 Low Gate Charge (Typical Data:75nC)

 Low Reverse transfer capacitances(Typical:75pF)

 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 60 V
a1
Continuous Drain Current 120 A
ID
Continuous Drain Current TC = 100 °C 84 A
a2
IDM Pulsed Drain Current 480 A
VGS Gate-to-Source Voltage ±20 V
a3
EAS Single Pulse Avalanche Energy 1300 mJ
a4
dv/dt Peak Diode Recovery dv/dt 3 V/ns
Power Dissipation 230 W
PD
Derating Factor above 25°C 1.4 W/℃
TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 60 -- -- V

ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.08 V/℃

VDS =60V, VGS= 0V,
Ta = 25℃ -- 1
IDSS Drain to Source Leakage Current VDS =48V, VGS= 0V, µA
Ta = 125℃ -- 125

IGSS(F) Gate to Source Forward Leakage VGS =+20V -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- 100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=50A -- 7 8 mΩ
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
gfs Forward Trans conductance VDS=15V, ID =50.0A -- 80 -- S
Ciss Input Capacitance -- 4000 --
VGS = 0V VDS = 25V
Coss Output Capacitance f = 1.0MHz -- 750 -- pF
Crss Reverse Transfer Capacitance -- 75 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 17 --
tr Rise Time ID =50.0A VDD = 30V -- 82 --
VGS = 10V R G = 3.6Ω ns
td(OFF) Turn-Off Delay Time -- 58 --
tf Fall Time -- 30 --
Qg Total Gate Charge -- 75
ID =50.0A VDD =30V
Qgs Gate to Source Charge VGS = 10V -- 18 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 26 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 120 A
ISM Maximum Pulsed Current (Body Diode) -- -- 480 A
VSD Diode Forward Voltage IS=50.0A,VGS=0V -- -- 1.5 V
trr Reverse Recovery Time IS=50.0A,Tj = 25°C -- 135 -- ns
dIF/dt=100A/us,
Qrr Reverse Recovery Charge VGS=0V -- 360 -- nC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Max. Units

Rθ JC Junction-to-Case 0.65 ℃/W
Rθ JA Junction-to-Ambient 62.5 ℃/W

a1
：Drain Current limited by Maximum Package Current Rating, 75 Amps
a2
：Repetitive rating; pulse width limited by maximum junction temperature
a3
：L=260uH, ID=101.5A, Start TJ =25℃
a4
：ISD =50A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃

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Characteristics Curve：

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Test Circuit and Waveform

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Package Information

Values(mm)
Items
MIN MAX
A 9.60 10.6

B 15.0 16.0

B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 2.70 3.80
L* 12.6 14.8
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
*adjustable
TO-220AB Package
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The name and content of poisonous and harmful material in products

Hazardous Substance
Part’s Name
Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP

Limit ≤ ≤ ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.1% 0.1% 0.01%

Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Compound
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：Means the hazardous material is under the criterion of 2011/65/EU.
×：Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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