Silicon N-Channel Power MOSFET ○

CS150N03 A8

General Description： VDSS 30 V

CS150N03 A8, the silicon N-channel Enhanced ID （ Silicon limited current） 150 A
VDMOSFETs, is obtained by the high density Trench ID （ Package limited ） 90 A

technology which reduce the conduction loss, improve switching PD 120.1 W

RDS(ON)Typ 2.4 mΩ
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-220AB, which accords with the RoHS
standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤3.5 mΩ)
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.

Absolute（TC= 25℃ unless otherwise specified）

Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 30 V
Continuous Drain Current 150 A
ID
Continuous Drain Current T C = 100 °C 104 A
a1
IDM Pulsed Drain Current 600 A
VGS Gate-to-Source Voltage ±20 V
a2
EAS Avalanche Energy 328 mJ
Power Dissipation 120.1 W
PD
Derating Factor above 25°C 0.96 W/℃
TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL MaximumTemperature for Soldering 300 ℃

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Electrical Characteristics（T C= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 30 -- -- V
VDS =30V, V GS= 0V,
Tc = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =24V, V GS= 0V, µA
TC = 125℃ -- -- 100
IGSS(F) Gate to Source Forward Leakage VGS=20V -- -- 100 nA
IGSS(R) Gate to Source Reverse Leakage VGS =-20V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VGS=10V,ID =50A -- 2.4 3.5 mΩ
R DS(ON) Drain-to-Source On-Resistance
VGS=4.5V,ID =40A -- 5.0 6.5 mΩ
VGS(TH) Gate Threshold Voltage VDS = V GS, ID = 250µA 1.0 1.7 3.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz -- 0.95 -- Ω
C iss Input Capacitance -- 7901 --
VGS = 0V V DS =15V
C oss Output Capacitance f = 1.0MHz -- 940 -- pF
C rss Reverse Transfer Capacitance -- 817 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 30.4 --
tr Rise Time VGS =10V，RG=6Ω -- 30.9 --
VDD =15V，ID =50A
ns
td(OFF) Turn-Off Delay Time -- 121 --
tf Fall Time -- 56 --
Qg Total Gate Charge -- 145.8 --
ID =50A VDD =15V
Qgs Gate to Source Charge VGS = 10V -- 25.3 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 34.6 --

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Source-Drain Diode Characteristics

Test Rating
Symbol Parameter Units
Conditions Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 150 A
ISM Maximum Pulsed Current (Body Diode) -- -- 600 A
VSD Diode Forward Voltage IS=50A,VGS =0V -- -- 1.2 V
trr Reverse Recovery Time di/dt=100A/us -- 37 -- ns
Qrr Reverse Recovery Charge IF=50A -- 35 -- nC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Max. Units

R θ JC Junction-to-Csae 1.04 ℃/W
R θ JA Junction-to-Ambient 62.5 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=0.1mH,Ias=81A Start T J=25℃

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Characteristics Curve：
1000 140

10μs 120

100

PD ,Power Dissipation,W
100
I D ,Drain Current,A

100μs
80

60
Operation in This 1ms
Area
10
is Limited by RDS(on)
10ms 40

DC
SINGLE PULSE 20
TC =25℃
TJ =150℃
1 0
0.1 1 10 100 0 25 50 75 100 125 150

V DS,Dra in-to-Source Voltage ,V T C,Case Te mpe rature,℃

Figure 1 . Maximum Safe Operating Area Figure 2. Maximum Power Dissipation vs

Case Temperature
Vgs=5.5V
200
160
Vgs=6.0V~10V
180
140 This Area
is Limited by Package Vgs=5.0V
160
120
140
I D ,Drain Current,A

Vgs=4.5V
ID,Drain Current[A]

100
120

80 100

60 80

40 60

40
20 Note:
20 1.250us Pulse Test
0 2.Tc=25℃
25 50 75 100 125 150 0
0 0.5 1 1.5 2
TC ,Ca se Te mpera ture ,℃

VDS,Drain-to-Source Voltage[V]

Figure 3. Maximum Continuous Drain Current

Figure 4. Typical output Characteristics
vs Case Temperature
1
D=1

0.5
ZθJA,Thermal Response[℃/W]

0.2
0.1 0.1

0.05

0.02

0.01
0.01

Single Pulse

0.001
0.0 000 01 0.0000 1 0.0001 0.001 0.0 1 0.1 1 10
T , Rectangular Pulse Duration [sec]

Figure 5 Maximum Effective Thermal Impedance , Junction to Case

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1000
100
Note:
1.VDS=10V
2.250us Pul se Tes t
100

Is,Source Current[A]
Tj=150℃ 10
ID ,Drain Current[A]

10 Tj=150℃

1 Tj=25℃ 1 Tj=25℃

0.1

0.1
0 0.2 0.4 0.6 0.8 1 1.2
0.01
2 2.5 3 3.5 4 4.5
V SD ，Source-to-Drain Voltage[V]
VGS,Gate-to-Source Voltage[V]

Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer

Characteristics

2.50 2
PULSED TEST
PULSED TEST
RDS(on),Drain-to-Source On Resistance,mΩ

VGS = 10V
Tj = 25℃ 1.8 ID = 50A
2.45
Drain-to-Source On Resistance

1.6
VGS = 10V
RDS(on),(Normalized)

2.40
1.4

2.35 1.2

1
2.30
0.8

2.25
0.6

2.20 0.4
0 5 10 15 20 25 30 35 40 45 50 -50 0 50 100 150
I D,Drain Current,A TJ,Junction Temperature(℃ )

Figure 8. Drain-to-Source On Resistance vs Figure 9. Normalized On Resistance vs

Drain Current Junction Temperature

1.3 1.051.2
VGS = VDS
ID = 250μA 1.04
1.2
Breakdown Voltage
Drain-to-Source Breakdown Voltage

1.15
1.1 1.03

1.02
VGS(th),(Normalized)

1 1.1
BVDSS,(Normalized)
BVDSS,(Normalized)
Threshold Voltage

1.01
0.9
1.05
1
0.8
Drain-to-Source

0.99
0.7 1
0.98

0.6 0.97
0.95
0.5 0.96

0.4 0.950.9
-50 0 50 100 150 -50
-100 -50 0 0 50
50 100 100 150 200
150

TJ,Junction Temperature(℃ ) TT J,JunctionTemperature(℃

J,Junction
Temperature(℃))

Figure10. Normalized Threshold Voltage vs Figure 11. Normalized Breakdown Voltage vs

Junction Temperature Junction Temperature

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100000 10

Ciss
10000
Capacitance,pF

Coss 4
1000 VDS=15V
f = 1MHz Crss I D=50A
Ciss = Cgs +Cgd 2
Coss = Cds+Cgd
Crss = Cgd
100 0
0 10 20 30 0 50 100 150

VDS,Drain-to-Source Voltage,V Qg,Gate Charge[nC]

Figure 12. Capacitance Characteristics Figure 13 Typical Gate Charge vs Gate to

Source Voltage

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Test Circuit and Waveform

Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms

Figure 16. Resistive Switching Test Circuit Figure 17. Resistive Switching Waveforms

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Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveform

Figure20.Unclamped Inductive Switching Test Circuit Figure21.Unclamped Inductive Switching Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 9.60 10.6
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 2.70 3.80
L* 12.6 14.8
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
*adjustable
TO-220AB Package

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The name and content of poisonous and harmful material in products

Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP

Limit ≤
≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1% ≤0.1%
0.01%

Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○
○：Means the hazardous material is under the criterion of 2011/65/EU.
×：Means the hazardous material exceeds the criterion of 2011/65/EU.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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