FW 201

N- Channel Silicon MOS FET

Very High-Speed Switching Applications

Features and Applications

TENTATIVE
• High density mounting is possible because of the complex type which holds two chips of a low on-resistance,
Very-high speed switching and 2.5-volt-drive, N channel MOSFET in one package.
• The two chips have near characteristics

Absoulute Maximum Ratings / Ta=25°C unit

Drain to Source Voltage VDSS 20 V
Gate to Source Voltage VGSS ±12 V
Drain Current(D.C) ID 5 A
Drain Current(Pulse) IDP PW≤10µS, dutycycle≤1% 48 A
Allowable power Dissipation PD Mounted on ceramic board 1.7 W
(1000mm 2 ×0.8mm)
All Dissipation PT Mounted on ceramic board 2.0 W
(1000mm 2 ×0.8mm)
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics / Ta=25°C min typ max unit

Drain to Source Breakdown Voltage V(BR)DSS ID=1mA , VGS=0 20 V
Zero Gate Voltage Drain Current IDSS VDS=20V , VGS=0 100 µA
Gate to Source Leakage Current IGSS VGS=±10V , VDS=0 ±10 µA
Cutoff Voltage VGS(OFF) VDS=10V , ID=1mA 0.4 1.4 V
Forward Transfer Admittance  yfs VDS=10V , ID=5A 6 10 S
Static Drain to Source on State Resistance RDS(On)1 ID=5A , VGS=4V 38 50 mΩ
RDS(On)2 ID=1A , VGS=2.5V 54 78 mΩ
Input Capacitance Ciss VDS=10V , f=1MHz 650 pF
Output Capacitance Coss VDS=10V , f=1MHz 400 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 140 pF
Turn-ON Delay Time td(On) 20 ns
Rise Time tr See Specified Test 200 ns
Turn-oFF Delay Time td(Off) Circuit . 160 ns
Fall Time tf 180 ns
Diode Forward Voltage VSD IS =5A , VGS= 0 1.0 1.2 V
Marking : W201

Switching Time Test Circuit Electrical Connection Case Outline

(Top View) SOP8(unit:mm)
VDD=10V
0.43

VIN
4V 1 8
D1 D1 D2 D2
0V ID=5A
2 7
5.0

VIN RL=2Ω
3 6
1.27

PW=10µS D VOUT
D.C.≤1% 4 5

1.5 0.1
4.4
G 1.8max

1:Source1
0.15

FW201 2:Gate1
P.G 50Ω 3:Source2
S1 G1 S2 G2 0.3
S 4:Gate2
6.0
5:Drain2
6:Drain2
7:Drain1
8:Drain1
Specifications and information herein are subject to change without notice.

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