STN4402

STN440
N Channel Enhancement Mode MOSFET

12A

DESCRIPTION

STN4402 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.

PIN CONFIGURATION FEATURE

SOP-8
� 30V/12A, RDS(ON) = 13mΩ (Typ.)
@VGS = 10V
� 30V/10A, RDS(ON) = 18mΩ
@VGS = 4.5V
� Super high density cell design for
extremely low RDS(ON)
� Exceptional on-resistance and
maximum DC current capability
� SOP-8 package design

PART MARKING
SOP-8

STN4402
YA

Y：Year
Year Code A：Process
Process Code

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4402 2009. V1
 STN4402
STN440
N Channel Enhancement Mode MOSFET

12A

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter Symbol Typical Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

TA=25℃ ID 12
Continuous Drain Current (TJ=150℃) A
TA=70℃ 10

Pulsed Drain Current IDM 30 A

Continuous Source Current (Diode Conduction) IS 2.3 A

TA=25℃ 2.5
Power Dissipation PD W
TA=70℃ 1.6

Operation Junction Temperature TJ -55/150 ℃

Storgae Temperature Range TSTG -55/150 ℃

Thermal Resistance-Junction to Ambient RθJA 80 ℃/W

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4402 2009. V1
 STN4402
STN440
N Channel Enhancement Mode MOSFET

12A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter Symbol Condition Min Typ Max Unit

Static
Drain-Source
V(BR)DSS VGS=0V,ID=250uA 30 V
Breakdown Voltage
Gate Threshold
VGS(th) VDS=VGS,ID=250uA 1.0 3.0 V
Voltage
Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA
VDS=24V,VGS=0V 1
Zero Gate Voltage
IDSS VDS=24V,VGS=0V
Drain Current 5 uA
TJ=85℃
On-State Drain
ID(on) VDS≧5V,VGS=10V 25 A
Current
Drain-source On- VGS=10V,ID=12A 10 13
RDS(on) mΩ
Resistance VGS=4.5V,ID=10A 13 18
Forward
gfs VDS=15V,ID=6.2AV 13 S
Transconductance
Diode Forward Voltage VSD IS=2.3A,VGS=0V 0.8 1.2 V

Dynamic

Total Gate Charge Qg 16 24

VDS=15V,VGS=10V
Gate-Source Charge Qgs 4.2
ID≡2A nC
Gate-Drain Charge Qgd 2.5
Input Capacitance Ciss 1350
Output Capacitance Coss VDS ==15V,VGS=0V 258 pF
F=1MHz
Reverse
Crss 150
TransferCapacitance
td(on) 15 20
Turn-On Time
tr VDD=15V,RL=15Ω 6 16
nS
ID=5.0A,VGEN=-10V
td(off) 20 40
Turn-Off Time RG=1Ω
tf 12 20

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4402 2009. V1
 STN4402
STN440
N Channel Enhancement Mode MOSFET

12A

TYPICAL CHARACTERICTICS

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4402 2009. V1
 STN4402
STN440
N Channel Enhancement Mode MOSFET

12A

TYPICAL CHARACTERICTICS

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4402 2009. V1
 STN4402
STN440
N Channel Enhancement Mode MOSFET

12A

PACKAGE OUTLINE SOP-8P

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4402 2009. V1