PD - 94653B

AUTOMOTIVE MOSFET IRF3205Z

IRF3205ZS
IRF3205ZL
Features HEXFET® Power MOSFET
● Advanced Process Technology
● Ultra Low On-Resistance D
● 175°C Operating Temperature VDSS = 55V
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5mΩ
G
Description
Specifically designed for Automotive applications, ID = 75A
S
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications. TO-220AB D2Pak TO-262
IRF3205Z IRF3205ZS IRF3205ZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 78 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current c 440
PD @TC = 25°C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS (Thermally limited) Single Pulse Avalanche Energy d 180 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value h 250
IAR Avalanche Current c See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw i y
10 lbf in (1.1N m) y
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.90 °C/W
RθCS Case-to-Sink, Flat Greased Surface i 0.50 –––
RθJA Junction-to-Ambient i ––– 62
RθJA Junction-to-Ambient (PCB Mount) j ––– 40

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 4.9 6.5 mΩ VGS = 10V, ID = 66A e
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 71 ––– ––– S VDS = 25V, ID = 66A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Qg Total Gate Charge ––– 76 110 ID = 66A
Qgs Gate-to-Source Charge ––– 21 ––– nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 30 ––– VGS = 10V e
td(on) Turn-On Delay Time ––– 18 ––– VDD = 28V
tr Rise Time ––– 95 ––– ID = 66A
td(off) Turn-Off Delay Time ––– 45 ––– ns RG = 6.8 Ω
tf Fall Time ––– 67 ––– VGS = 10V e
LD Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 3450 ––– VGS = 0V
Coss Output Capacitance ––– 550 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 310 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 430 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 640 ––– VGS = 0V, VDS = 0V to 44V f
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 75 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 440 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 66A, VGS = 0V e
trr Reverse Recovery Time ––– 28 42 ns TJ = 25°C, IF = 66A, VDD = 25V
Qrr Reverse Recovery Charge ––– 25 38 nC di/dt = 100A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100

10

4.5V 20µs PULSE WIDTH 4.5V 20µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 10
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 120
T J = 175°C
T J = 25°C
Gfs, Forward Transconductance (S)

100
ID, Drain-to-Source Current ( A)

T J = 175°C
100 80

60 T J = 25°C

10 40

20 VDS = 10V
VDS = 25V
20µs PULSE WIDTH
20µs PULSE WIDTH
1 0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 20 40 60 80 100
VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

Vs. Drain Current
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IRF3205ZS/L

6000 20
VGS = 0V, f = 1 MHZ ID= 66A
C iss = C gs + C gd, C ds SHORTED
VDS= 44V

VGS, Gate-to-Source Voltage (V)

5000 C rss = C gd
16 VDS= 28V
C oss = C ds + C gd
VDS= 11V
C, Capacitance (pF)

4000
Ciss 12

3000

8
2000

4
1000 Coss
Crss
0
0
1 10 100
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

1000
100.0 T J = 175°C

100

10.0 100µsec

T J = 25°C 10

1.0 1msec
1
Tc = 25°C 10msec
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF3205ZS/L

120 2.5

RDS(on) , Drain-to-Source On Resistance

LIMITED BY PACKAGE ID = 66A
100 VGS = 10V

2.0
ID , Drain Current (A)

80

(Normalized)
60 1.5

40

1.0
20

0
0.5
25 50 75 100 125 150 175
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

D = 0.50
Thermal Response ( Z thJC )

0.20

0.1 0.10

0.05

0.02
0.01
0.01

SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF3205ZS/L

350
15V
ID

EAS, Single Pulse Avalanche Energy (mJ)

TOP 27A
300 47A
BOTTOM 66A
L DRIVER
VDS
250

RG D.U.T +
V
200
- DD
IAS A
VGS
20V
tp 0.01Ω 150

100
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
50
tp

0
25 50 75 100 125 150 175

Starting T J, Junction Temperature (°C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 4.0
VGS(th) Gate threshold Voltage (V)

VG
ID = 250µA
3.0
Charge
Fig 13a. Basic Gate Charge Waveform

2.0

L
VCC
DUT
0 1.0
1K -75 -50 -25 0 25 50 75 100 125 150 175

T J , Temperature ( °C )

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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 IRF3205ZS/L

1000
Duty Cycle = Single Pulse

Allowed avalanche Current vs

100 avalanche pulsewidth, tav
0.01 assuming ∆ Tj = 25°C due to
Avalanche Current (A)

avalanche losses. Note: In no

case should Tj be allowed to
0.05 exceed Tjmax
10 0.10

0.1
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

200 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:
ID = 66A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

160
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
120
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
80 4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
40
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0
tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting T J , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·tav
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IRF3205ZS/L

Driver Gate Drive

D.U.T Period D=
P.W.
Period
+ P.W.

ƒ
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
‚ Reverse

-
„ +
Recovery
Current
Body Diode Forward
Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD
VDS

VGS
D.U.T.
RG
+
-VDD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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 IRF3205ZS/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER
IN T HE AS S EMBLY LINE "C" RECTIFIER
LOGO
DAT E CODE
YEAR 7 = 1997
AS S EMBLY
LOT CODE WEEK 19
LINE C

For GB Production
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER
IN T HE AS S EMBLY LINE "C" RECT IFIER
LOGO

DAT E CODE
LOT CODE

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IRF3205ZS/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

T HIS IS AN IRF530S WIT H PART NUMBER
LOT CODE 8024 INT ERNAT IONAL
AS S EMBLED ON WW 02, 2000 RECT IFIER F530S
IN T HE AS S EMBLY LINE "L" LOGO
DAT E CODE
YEAR 0 = 2000
AS S EMBLY
LOT CODE WEEK 02
LINE L
For GB Production
T HIS IS AN IRF530S WIT H PART NUMBER
LOT CODE 8024 INT ERNAT IONAL
AS S EMBLED ON WW 02, 2000 RECT IFIER F530S
IN T HE AS S EMBLY LINE "L" LOGO

DAT E CODE
LOT CODE

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 IRF3205ZS/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

IGBT
1- GATE
2- COLLEC-
TOR

TO-262 Part Marking Information

EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
INT ERNAT IONAL
AS SEMBLED ON WW 19, 1997
RECTIFIER
IN T HE AS S EMBLY LINE "C" LOGO
DAT E CODE
YEAR 7 = 1997
AS SEMBLY
LOT CODE WEEK 19
LINE C

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IRF3205ZS/L
D2Pak Tape & Reel Information
TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.08mH † This value determined from sample failure population. 100%
RG = 25Ω, IAS = 66A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
tested to this value in production.
‡ This is only applied to TO-220AB pakcage.
ˆ This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/