PD -97680

AUTOMOTIVE GRADE AUIRF1404S

Features
AUIRF1404L
● Advanced Planar Technology HEXFET® Power MOSFET
● Dynamic dV/dT Rating
● 175°C Operating Temperature D VDSS 40V
● Fast Switching RDS(on) typ. 3.5mΩ
● Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax max. 4.0mΩ
h
●
G
● Lead-Free, RoHS Compliant ID (Silicon Limited) 162A
● Automotive Qualified *
S ID (Package Limited) 75A

Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low S
on-resistance per silicon area. This benefit combined with D S
G D
the fast switching speed and ruggedized device design G
that HEXFET power MOSFETs are well known for, provides D2Pak TO-262
the designer with an extremely efficient and reliable AUIRF1404S AUIRF1404L
device for use in Automotive and a wide variety of other
applications. G D S
Gate Drain Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) i 162 h
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) i 115 h A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current ci 650
PD @TA = 25°C Maximum Power Dissipation 3.8 W
PD @TC = 25°C Maximum Power Dissipation 200
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) di 519 mJ
IAR Avalanche Current c 95 A
EAR Repetitive Avalanche Energy c 20 mJ
dv/dt Peak Diode Recovery ei 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
°C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case k ––– 0.75 °C/W
RθJA Junction-to-Ambient (PCB Mounted, steady-state) j ––– 40

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/
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 AUIRF1404S/L

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.0 mΩ VGS = 10V, ID = 95A f
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A i
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 40V, VGS = 0V
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 160 200 nC ID = 95A
Qgs Gate-to-Source Charge ––– 35 ––– VDS = 32V
Qgd Gate-to-Drain ("Miller") Charge ––– 42 60 VGS = 10V fi
td(on) Turn-On Delay Time ––– 17 ––– ns VDD = 20V
tr Rise Time ––– 140 ––– ID = 95A
td(off) Turn-Off Delay Time ––– 72 ––– RG = 2.5Ω
tf Fall Time ––– 26 ––– RD = 0.21Ω fi
LS Internal Source Inductance ––– 7.5 ––– nH Between lead,
and center of die contact
Ciss Input Capacitance ––– 7360 ––– pF VGS = 0V
Coss Output Capacitance ––– 1680 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0 MHz, See Fig. 5 i
Coss Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance (Time Related) ––– 1540 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 162 h A MOSFET symbol D

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 650 A integral reverse G

(Body Diode) d p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V f
trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A
Qrr Reverse Recovery Charge ––– 180 270 nC di/dt = 100A/μs fi
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by † Calculated continuous current based on maximum allowable
max. junction temperature. (See fig. 11) junction temperature. Package limitation current is 75A.

‚ Starting TJ = 25°C, L = 0.12mH ‡ Use IRF1404 data and test conditions.

RG = 25Ω, IAS = 95A. (See Figure 12)
ˆ When mounted on 1" square PCB ( FR-4 or G-10 Material ).
ƒ ISD ≤ 95A, di/dt ≤ 150A/μs, VDD ≤ V(BR)DSS, For recommended footprint and soldering techniques refer to
TJ ≤ 175°C. application note #AN-994.
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
‰ Rθ is measured at TJ approximately 90°C.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS.

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†
Qualification Information
Qualification Level
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.

Moisture Sensitivity Level D2Pak MSL1

TO-262 N/A
Machine Model Class M4 (+/- 425V)
†††

AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)
†††
ESD
AEC-Q101-001
Charged Device Class C5 (+/- 1125V)
†††

Model AEC-Q101-005
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.

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AUIRF1404S/L

1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100 4.5V
100
4.5V

20μs PULSE WIDTH 20μs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
10 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
ID = 159A
RDS(on) , Drain-to-Source On Resistance

TJ = 25 ° C
I D , Drain-to-Source Current (A)

TJ = 175 ° C 2.0
(Normalized)

1.5

100

1.0

0.5

V DS = 25V
20μs PULSE WIDTH VGS = 10V
10 0.0
4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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12000 20
VGS = 0V, f = 1MHz ID = 95A
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd VDS = 32V

VGS , Gate-to-Source Voltage (V)

10000 Coss = Cds + Cgd 16 VDS = 20V
C, Capacitance (pF)

8000 Ciss
12

6000

8
4000
Coss
4
2000

Crss FOR TEST CIRCUIT

SEE FIGURE 13
0 0
1 10 100 0 40 80 120 160 200 240
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 175 ° C
1000
ID , Drain Current (A)

100 10us

100 100us

TJ = 25 ° C
1ms
10
10 10ms

TC = 25 °C
TJ = 175 °C
V GS = 0 V Single Pulse
1 1
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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AUIRF1404S/L

RD
V DS
200
VGS
LIMITED BY PACKAGE D.U.T.
RG
160 +
- V DD
ID , Drain Current (A)

120 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

80

Fig 10a. Switching Time Test Circuit

40

VDS
0 90%
25 50 75 100 125 150 175
TC , Case Temperature ( °C)

10%
VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response(Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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15V
1200

EAS , Single Pulse Avalanche Energy (mJ)

ID
TOP 39A
VDS L DRIVER
1000 67A
BOTTOM 95A

RG D.U.T + 800
- VDD
IAS A
20V
tp 0.01Ω 600

400
Fig 12a. Unclamped Inductive Test Circuit
200
V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature( ° C)

I AS

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current

QG
10 V
QGS QGD
50
VG
V DSav , Avalanche Voltage ( V )

48

Charge
46

Fig 13a. Basic Gate Charge Waveform

44
Current Regulator
Same Type as D.U.T.

42
50KΩ

12V .2μF
.3μF

+ 40
V
D.U.T. - DS 0 20 40 60 80 100

VGS
IAV , Avalanche Current ( A)

3mA

IG ID
Current Sampling Resistors

Fig 12d. Typical Drain-to-Source Voltage

Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
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Peak Diode Recovery dv/dt Test Circuit

D.U.T + Circuit Layout Considerations

• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

‚ „
- +
-


RG
+
• dv/dt controlled by RG VDD
• Driver same type as D.U.T. -
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V*

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-channel HEXFET® Power MOSFETs

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D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)

D2Pak (TO-263AB) Part Marking Information

Part Number AUIRF1404S

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, LeadFree

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1404S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

Part Number AUIRF1404L

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, LeadFree

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 AUIRF1404S/L

D2Pak (TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF1404S/L

Ordering Information
Base part Package Type Standard Pack Complete Part Number
number
Form Quantity
AUIRF1404S D2Pak Tube 50 AUIRF1404S
Tape and Reel Left 800 AUIRF1404STRL
Tape and Reel Right 800 AUIRF1404STRR
AUIRF1404L TO-262 Tube 50 AUIRF1404L

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IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any
such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
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and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military
grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105

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