AUTOMOTIVE GRADE

AUIRF1405ZS-7P
Features HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 55V
l 175°C Operating Temperature
Fast Switching
l
G RDS(on) = 4.9mΩ
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Automotive Qualified *
S
ID = 120A
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Description
This HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device D2Pak 7 Pin
for use in a wide variety of applications.

Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
Tube 50 AUIRF1405ZS-7P
AUIRF1405ZS-7P D2Pak- 7 Pin
Tape and Reel Left 800 AUIRF1405ZS-7TRL

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter Max. Units

I D @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 150
I D @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) 100
A
I D @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 120
I DM Pulsed Drain Current c 590
P D @TC = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
V GS Gate-to-Source Voltage ± 20 V
E AS Single Pulse Avalanche Energy (Thermally Limited) d 250 mJ
I AR Avalanche Current c See Fig.12a,12b,15,16 A
E AR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Casei ––– 0.65
RθJA Junction-to-Ambient (PCB Mount, steady state) hi ––– 40
°C/W

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) SMD Static Drain-to-Source On-Resistance ––– 3.7 4.9 mΩ VGS = 10V, ID = 88A e
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 150μA
gfs Forward Transconductance 108 ––– ––– S VDS = 10V, ID = 88A
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Qg Total Gate Charge ––– 150 230 nC ID = 88A
Q gs Gate-to-Source Charge ––– 37 ––– VDS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– 64 ––– VGS = 10V e
td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 28V
tr Rise Time ––– 140 ––– ID = 88A
td(off) Turn-Off Delay Time ––– 170 ––– RG = 5.0Ω
tf Fall Time ––– 130 ––– VGS = 10V d
LD Internal Drain Inductance ––– 4.5 ––– nH Between lead,
D
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package G

and center of die contact S

Ciss Input Capacitance ––– 5360 ––– pF VGS = 0V

Coss Output Capacitance ––– 1310 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6080 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 920 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1700 ––– VGS = 0V, VDS = 0V to 44V

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 150 MOSFET symbol D

(Body Diode) A showing the

ISM Pulsed Source Current ––– ––– 590 integral reverse G

(Body Diode) c p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 88A, VGS = 0V e
trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 88A, VDD = 28V
Q rr Reverse Recovery Charge ––– 160 240 nC di/dt = 100A/μs e

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C,
L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V.
Part not recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
† This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
‡ Rθ is measured at TJ of approximately 90°C.

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1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V
4.5V

4.5V
10 10

≤60μs PULSE WIDTH ≤60μs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 1000 0.1 1 10 100 1000
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

200
1000
175
Gfs, Forward Transconductance (S)

TJ = 25°C
ID, Drain-to-Source Current (Α)

150
100
125
T J = 175°C
100
10 TJ = 175°C

75
T J = 25°C
50 VDS = 10V
1
380μs PULSE
25 WIDTH
VDS = 25V
≤60μs PULSE WIDTH 0
0.1
0 25 50 75 100 125 150 175 200
0 2 4 6 8 10 12
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

vs. Drain Current

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100000 12.0
VGS = 0V, f = 1 MHZ
ID= 88A
C iss = C gs + C gd, C ds SHORTED
C rss = C gd 10.0 VDS= 44V

VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= 28V
C, Capacitance(pF)

10000 8.0
Ciss

Coss 6.0

1000 Crss 4.0

2.0

100 0.0
1 10 100 0 50 100 150 200
VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

T J = 175°C 100μsec
100 100
1msec

10

T J = 25°C
10 1 DC

Tc = 25°C 10msec
0.1
Tj = 175°C
VGS = 0V Single Pulse
1 0.01
0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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150
2.5
ID = 88A

RDS(on) , Drain-to-Source On Resistance

125 VGS = 10V

2.0
ID, Drain Current (A)

100

(Normalized)
75
1.5

50

1.0
25

0
0.5
25 50 75 100 125 150 175
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Fig 10. Normalized On-Resistance

Case Temperature vs. Temperature

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
0.05
R1 R2 R3
R1 R2 R3 Ri (°C/W) τi (sec)
0.02 τJ
0.01
0.01 τJ
τC
τ
0.1707 0.000235
τ1 τ2 τ3
τ1 τ2 τ3 0.1923 0.000791
Ci= τi/Ri 0.2885 0.008193
SINGLE PULSE Ci i/Ri
0.001 ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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15V
1000
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP 14A
L DRIVER
VDS 800 23A
BOTTOM 88A
RG D.U.T +
V 600
- DD
IAS A
VGS
20V
tp 0.01Ω

400

Fig 12a. Unclamped Inductive Test Circuit

200
V(BR)DSS
tp

0
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)

I AS

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
QG
10 V
QGS QGD
4.5
VG
VGS(th) Gate threshold Voltage (V)

4.0

Charge 3.5

Fig 13a. Basic Gate Charge Waveform 3.0

ID = 150μA
Current Regulator 2.5
Same Type as D.U.T.
ID = 250μA
ID = 1.0mA
2.0
50KΩ ID = 1.0A
12V .2μF
.3μF
1.5
+
V
D.U.T. - DS
1.0
VGS -75 -50 -25 0 25 50 75 100 125 150 175 200

3mA T J , Temperature ( °C )

IG ID
Current Sampling Resistors

Fig 14. Threshold Voltage vs. Temperature

Fig 13b. Gate Charge Test Circuit
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1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
100 Tstart =25°C (Single Pulse)
Avalanche Current (A)

0.01
0.05
10 0.10

1 Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

300 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
250 ID = 88A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

temperature far in excess of T jmax. This is validated for

every part type.
200 2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
150 Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
100 5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
50
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25 50 75 100 125 150 175
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

RD
V DS

V GS
D.U.T.
RG
+
-V DD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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D2Pak - 7 Pin Package Outline

Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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D2Pak - 7 Pin Part Marking Information

Part Number AUF1405ZS-7P

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

D2Pak - 7 Pin Tape and Reel

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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†
Qualification Information
Automotive
(per AEC-Q101)

Qualification Level Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.

Moisture Sensitivity Level 7L-D2 PAK MSL1

††
Class M4(425V)
Machine Model
(per AEC-Q101-002)
††
Class H1C(2000V)
ESD Human Body Model
(per AEC-Q101-001)
††
Class C5(1125V)
Charged Device Model
(per AEC-Q101-005)
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site:

http://www.irf.com/product-info/reliability
†† Highest passing voltage.

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IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.

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For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105

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Revision History
Date Comments

2/27/2015 • Corrected part number for TRL from "AUIRF1405ZS-7PTRL" to "AUIRF1405ZS-7TRL" on page1.

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