IPD60R360P7

MOSFET
600VCoolMOSªP7PowerDevice DPAK

TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor tab
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability. 2
Furthermore,extremelylowswitchingandconductionlossesmake 1

switchingapplicationsevenmoreefficient,morecompactandmuch 3
cooler.

Features Drain
Pin 2, Tab
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
 commutationruggedness
•Significantreductionofswitchingandconductionlosses
*1
Gate
Pin 1
•ExcellentESDrobustness>2kV(HBM)forallproducts *2

•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya
 lowRDS(on)*A(below1Ohm*mm²) *1: Internal body diode
*2: Integrated ESD diode
Source
Pin 3

Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
 acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
 losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
 smallerfootprintandhighermanufacturingqualitydueto>2kVESD
 protection
•Suitableforawidevarietyofapplicationsandpowerranges

Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 360 mΩ
Qg,typ 13 nC
ID,pulse 26 A
Eoss @ 400V 1.6 µJ
Body diode diF/dt 900 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPD60R360P7 PG-TO252-3 60R360P7 see Appendix A

Final Data Sheet 1 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
IPD60R360P7

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 9 TC=25°C
Continuous drain current1) ID A
- - 6 TC=100°C
Pulsed drain current2) ID,pulse - - 26 A TC=25°C
Avalanche energy, single pulse EAS - - 27 mJ ID=2.5A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.14 mJ ID=2.5A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 2.5 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 41 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current IS - - 9 A TC=25°C
Diode pulse current 2)
IS,pulse - - 26 A TC=25°C
VDS=0...400V,ISD<=9A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 50 V/ns
see table 8
VDS=0...400V,ISD<=9A,Tj=25°C
Maximum diode commutation speed diF/dt - - 900 A/µs
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Limited by Tj,max. Maximum Duty Cycle D = 0.50
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch with identical RG
Final Data Sheet 3 Rev.2.5,2020-05-26
 600VCoolMOSªP7PowerDevice
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2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 3.04 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
Thermal resistance, junction - ambient layer, 70µm thickness) copper area
RthJA - 35 45 °C/W
for SMD version for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wavesoldering
Tsold - - 260 °C reflow MSL1
only allowed at leads

Final Data Sheet 4 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.14mA
- - 1 VDS=600V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V
- 0.300 0.360 VGS=10V,ID=2.7A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.702 - VGS=10V,ID=2.7A,Tj=150°C
Gate resistance RG - 6.2 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 555 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 10 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 20 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 214 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=2.7A,
Turn-on delay time td(on) - 8 - ns
RG=10.0Ω;seetable9
VDD=400V,VGS=13V,ID=2.7A,
Rise time tr - 7 - ns
RG=10.0Ω;seetable9
VDD=400V,VGS=13V,ID=2.7A,
Turn-off delay time td(off) - 42 - ns
RG=10.0Ω;seetable9
VDD=400V,VGS=13V,ID=2.7A,
Fall time tf - 10 - ns
RG=10.0Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 3 - nC VDD=400V,ID=2.7A,VGS=0to10V
Gate to drain charge Qgd - 4 - nC VDD=400V,ID=2.7A,VGS=0to10V
Gate charge total Qg - 13 - nC VDD=400V,ID=2.7A,VGS=0to10V
Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=2.7A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.5,2020-05-26
 600VCoolMOSªP7PowerDevice
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Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.7A,Tj=25°C
VR=400V,IF=1A,diF/dt=100A/µs;
Reverse recovery time trr - 145 - ns
see table 8
VR=400V,IF=1A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 0.74 - µC
see table 8
VR=400V,IF=1A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 11 - A
see table 8

Final Data Sheet 6 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
50 102

101 1 µs
40

10 µs
0
10
100 µs
30
Ptot[W]

1 ms

ID[A]
10-1 10 ms

20 DC
-2
10

10
10-3

0 10-4
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

101
1 µs

10 µs
100
0.5
100 µs
ZthJC[K/W]

1 ms
ID[A]

10-1 10 ms 100
0.2
DC

10-2 0.1

0.05

10-3 0.02
0.01
single pulse
10-4 10-1
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
40 20
20 V
10 V

20 V 8V
10 V
30 15 7V

8V
6V
7V
ID[A]

ID[A]
20 10
5.5 V

6V
10 5 5V

5.5 V
4.5 V
5V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
1.400 3.000
6V
5.5 V
1.300
2.500

1.200 6.5 V
7V
2.000
RDS(on)[normalized]

1.100 10 V
RDS(on)[Ω]

1.000 1.500

0.900 20 V
1.000

0.800

0.500
0.700

0.600 0.000
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=2.7A;VGS=10V

Final Data Sheet 8 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
30 12
25 °C

25 10

120 V
400 V
20 8
150 °C

VGS[V]
ID[A]

15 6

10 4

5 2

0 0
0 2 4 6 8 10 12 0 5 10 15 20
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=2.7Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 30

25

101 20
EAS[mJ]
IF[A]

125 °C 25 °C 15

100 10

10-1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=2.5A;VDD=50V

Final Data Sheet 9 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
690 104

680

670

660
103 Ciss
650

640

630
VBR(DSS)[V]

C[pF]
620
102
610

600 Coss
590

580
101
570

560
Crss
550

540 100
-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
2.5

2.0

1.5
Eoss[µJ]

1.0

0.5

0.0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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6PackageOutlines

Figure1OutlinePG-TO252-3,dimensionsinmm/inches

Final Data Sheet 12 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
IPD60R360P7

7AppendixA

Table11RelatedLinks
• IFXCoolMOSP7Webpage:www.infineon.com

• IFXCoolMOSP7applicationnote:www.infineon.com

• IFXCoolMOSP7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.5,2020-05-26

 600VCoolMOSªP7PowerDevice
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RevisionHistory
IPD60R360P7

Revision:2020-05-26,Rev.2.5
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-02-03 Release of final version
2.1 2017-02-17 Modified Safe Operating Area diagrams on page 7
2.2 2017-03-03 updated y-axis label diagram 8
2.3 Updated Co(er); Co(tr); Eoss; diagram scalings; Nomenclature of product qualification
2018-03-02 grade was changed, new revision of package outlines
2.4 Nomenclature of product qualification grade was changed, updated RDSon typ at 25°C
2018-06-07 and 150°C
2.5 2020-05-26 Updated package/symbol drawing, and product validation

Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 14 Rev.2.5,2020-05-26