AIMDQ75R008M1H

MOSFET
CoolSiCªAutomotivePowerDevice750VG1 PG-HDSOP-22

The750VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology
developedinInfineoninmorethan20years.Leveragingthewidebandgap
SiCmaterialcharacteristics,the750VCoolSiC™MOSFEToffersaunique 22

combinationofperformance,reliabilityandeaseofuse.Suitableforhigh 12

temperatureandharshoperations,itenablesthesimplifiedandcost TAB

effectivedeploymentofthehighestsystemefficiency. 1

11

Features
•Highlyrobust750Vtechnology,100%avalanchetested
•Best-in-classRDS(on)xQfr
•ExcellentRDS(on)xQossandRDS(on)xQG
•UniquecombinationoflowCrss/CissandhighVGS(th) Drain
Pin 12-22, Tab
•Infineonproprietarydieattachtechnology
•Cuttingedgetopsidecoolingpackage(QDPAK)
•Driversourcepinavailable Gate *1

•Best-in-classRDS(on)inSMDdevice Pin 1
Driver
Source
Pin 2 Power

Benefits *1: Internal body diode

Source
Pin 3-11
•Enhancedrobustnessandreliabilityforbusvoltagesbeyond500V
•Superiorefficiencyinhardswitching
•Higherswitchingfrequencyinsoftswitchingtopologies
•Robustnessagainstparasiticturnonforunipolargatedriving
•Best-in-classthermaldissipation
•Reducedswitchinglossesthroughimprovedgatecontrol
•Reducedconductionlossesinsmallformfactor

Potentialapplications
•Circuitbreakers(HVbatterydisconnectswitch,DCandAClowfrequency
switch,HVE-fuse)
•Uni-andbidirectionalOnBoardChargersandHV-LVDCDCconverters
(hardswitchinghalfbridgesandsoftswitchingtopologies)

Productvalidation
QualifiedaccordingtoAECQ101

Pleasenote:Thesourceanddriversourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.

Table1KeyPerformanceParameters
Parameter Value Unit
VDSSoverfullTj,range 750 V
RDS(on),typ 7.8 mΩ
RDS(on),max 10.6 mΩ
QG,typ 178 nC
IDM,max 708 A
Qoss,typ@500V 352 nC
Eoss,typ@500V 63.1 µJ

Type/OrderingCode Package Marking RelatedLinks

AIMDQ75R008M1H PG-HDSOP-22 75A008M1 see Appendix A

Final Data Sheet 1 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet 2 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

1Maximumratings
atTj=25°C,unlessotherwisespecified.

Note: for optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80%
of the maximum ratings stated in this datasheet.

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 173 TC=25°C
Continuous DC drain current1) IDDC A
- - 128 TC=100°C
Peak drain current2) IDM - - 708 A TC=25°C,VGS=18V
Avalanche energy, single pulse EAS - - 926 mJ ID=34.7A,VDD=50V;seetable11
Avalanche current, single pulse IAS - - 34.7 A -
MOSFETdv/dtruggedness dv/dt - - 200 V/ns VDS=0...500V
Gate source voltage (static) VGS -5 - 23 V -
Gate source voltage (transient) VGS -10 - 25 V tp≤500ns,dutycycle≤1%
Power dissipation Ptot - - 625 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 175 °C -
Mounting torque - - - n. a. Ncm -
- - 173 VGS=18V,TC=25°C
Continuous reverse drain current1) ISDC A
- - 74 VGS=0V,TC=25°C
- - 708 TC=25°C,tp≤250ns
Peak reverse drain current2) ISM A
- - 232 TC=25°C
Insulation withstand voltage VISO - - n. a. V Vrms,TC=25°C,t=1min

1)
LimitedbyTj,max
2)
PulsewidthtplimitedbyTj,max
Final Data Sheet 3 Rev.2.0,2023-08-28
 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Not subject to production test.
Parameter verified by
Thermal resistance, junction - case Rth(j-c) - - 0.24 °C/W
design/characterization according to
JESD51-14.
Soldering temperature,
Tsold - - 260 °C reflow MSL3
reflow soldering allowed

3Operatingrange

Table4Operatingrange
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate-source voltage operating range
VGS -2 - 20 V -
including undershoots1)
Recommended turn-on voltage VGS(on) - 18 - V -
Recommended turn-off voltage VGS(off) - 0 - V -

1)
Importantnotice:Ifthegatesourcevoltageofthedeviceinapplicationexceedstheoperatingrange(Table4),thedevice
RDS(on)andVGS(th)mightexceedthemaximumvaluestatedinthedatasheetattheendofthelifetimeofthedevice.Inorderto
ensure sound operation of the device over the planned lifetime, the maximum ratings (Table 2) and the application note
AN2018-09 must be considered.
Final Data Sheet 4 Rev.2.0,2023-08-28
 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table5Staticcharacteristics
For applications with applied blocking voltage > 525 V, it is required that the customer evaluates the impact of
cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical
support.
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
VGS=0V,ID=3.24mA,
Drain-source voltage1) VDSS 750 - - V
Tj=-55°Cto175°C
Gate threshold voltage2) VGS(th) 3.5 4.3 5.6 V VDS=VGS,ID=32.4mA
- 1 75 VDS=750V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=750V,VGS=0V,Tj=175°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 9.6 - VGS=15V,ID=90.3A,Tj=25°C
- 7.8 10.6 VGS=18V,ID=90.3A,Tj=25°C
Drain-source on-state resistance RDS(on) mΩ
- 7.2 - VGS=20V,ID=90.3A,Tj=25°C
- 14 - VGS=18V,ID=90.3A,Tj=175°C
Internal gate resistance RG,int - 3 - Ω f=1MHz

Table6Dynamiccharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 6135 - pF VGS=0V,VDS=500V,f=250kHz
Reverse transfer capacitance Crss - 37 - pF VGS=0V,VDS=500V,f=250kHz
Output capacitance 3)
Coss - 392 510 pF VGS=0V,VDS=500V,f=250kHz
Output charge 3)
Qoss - 352 458 nC calculationbasedonCoss
Effective output capacitance, VGS=0V,
Co(er) - 505 - pF
energy related4) VDS=0...500V
Effective output capacitance, ID=constant,VGS=0V,
Co(tr) - 704 - pF
time related5) VDS=0...500V
VDD=500V,VGS=18V,ID=90.3A,
Turn-on delay time td(on) - 22 - ns
RG=1.8Ω;seetable10
VDD=500V,VGS=18V,ID=90.3A,
Rise time tr - 30 - ns
RG=1.8Ω;seetable10
VDD=500V,VGS=18V,ID=90.3A,
Turn-off delay time td(off) - 50 - ns
RG=1.8Ω;seetable10
VDD=500V,VGS=18V,ID=90.3A,
Fall time tf - 16 - ns
RG=1.8Ω;seetable10
1)
TestedatTj=25°C,minimumVDSSverifiedbydesignoverfulljunctiontemperaturerange.
2)
Tested after 1 ms pulse at VGS = +20 V. “Linear mode” operation is not recommended. For assessment of potential “linear
mode” operation, please contact Infineon sales office.
3)
Maximum specification is defined by calculated six sigma upper confidence bound.
4)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V.
5)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V.
Final Data Sheet 5 Rev.2.0,2023-08-28
 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

Table7Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
VDD=500V,ID=90.3A,
Plateau gate to source charge QGS(pl) - 50 - nC
VGS=0to18V
VDD=500V,ID=90.3A,
Gate to drain charge QGD - 45 - nC
VGS=0to18V
VDD=500V,ID=90.3A,
Total gate charge QG - 178 - nC
VGS=0to18V

Table8Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source reverse voltage VSD - 3.9 5.3 V VGS=0V,IS=90.3A,Tj=25°C
VDD=500V,IS=90.3A,
- 47 - diS/dt=1000A/µs;seetable9
MOSFET forward recovery time tfr ns
- 26 - VDD=500V,IS=90.3A,
diS/dt=4000A/µs;seetable9
VDD=500V,IS=90.3A,
- 418 - diS/dt=1000A/µs;seetable9
MOSFET forward recovery charge 1)
Qfr nC
- 677 - VDD=500V,IS=90.3A,
diS/dt=4000A/µs;seetable9
VDD=500V,IS=90.3A,
MOSFET peak forward recovery - 18 - diS/dt=1000A/µs;seetable9
Ifrm A
current - 52 - VDD=500V,IS=90.3A,
diS/dt=4000A/µs;seetable9

1)
QfrincludesQoss
Final Data Sheet 6 Rev.2.0,2023-08-28
 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
700 103

600 1 µs
102

500
101
10 µs
400
Ptot[W]

IDS[A]
100
100 µs
300

1 ms
10-1
200
10 ms

10-2
100
DC

0 10-3
0 25 50 75 100 125 150 175 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) IDS=f(VDS); TC=25 °C; D=0; parameter: tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

102
1 µs

101
Zth(j-c),max[K/W]

10 µs 0.5
IDS[A]

0
10 10-1

100 µs
0.2
-1
10
1 ms
0.1
0.05
10 ms
10-2 0.02
0.01
DC
single pulse
10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
IDS=f(VDS); TC=80 °C; D=0; parameter: tp Zth(j-c),max=f(tP); parameter: D=tp/T

Final Data Sheet 7 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
1200 900

20 V 800
1000 20 V
18 V 700 18 V

800 600
15 V

15 V 500
IDS[A]

IDS[A]
600
400
12 V

400 300
12 V
10 V
200
200
10 V 8V
100
8V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
IDS=f(VDS); Tj=25 °C; parameter: VGS IDS=f(VDS); Tj=175 °C; parameter: VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.030 2.0

0.025

1.5
RDS(on)[normalized]
RDS(on)[Ω]

0.020 10 V 12 V 15 V 18 V 20 V

1.0

0.015

0.010 0.5
0 150 300 450 600 750 900 1050 -50 -25 0 25 50 75 100 125 150 175
IDS[A] Tj[°C]
RDS(on)=f(IDS); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=90.3 A; VGS=18 V

Final Data Sheet 8 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
1200 20

18

1000
16
25 °C
14
800

175 °C 12

VGS[V]
IDS[A]

600 10
500 V
8

400
6

4
200

0 0
0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200
VGS[V] QG[nC]
IDS=f(VGS); VDS=20 V; parameter: Tj VGS=f(QG); IDS=90.3 A pulsed; parameter: VDD

Diagram11:Typ.reversedraincurrentcharacteristics Diagram12:Typ.reversedraincurrentcharacteristics
3
10 103

25 °C

102 102
175 °C
ISD[A]

ISD[A]

101 101
175 °C

100 25 °C 100

10-1 10-1
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VSD[V] VSD[V]
ISD=f(VSD); VGS=0 V; parameter: Tj ISD=f(VSD); VGS=18 V; parameter: Tj

Final Data Sheet 9 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

Diagram13:Avalancheenergy Diagram14:Drain-sourcebreakdownvoltage
1000 810

900

800
800

700
790

600
EAS[mJ]

VDSS[V]
500 780

400

770
300

200
760

100

0 750
25 55 85 115 145 175 -50 -25 0 25 50 75 100 125 150 175
Tj[°C] Tj[°C]
EAS=f(Tj); ID=34.7 A; VDD=50 V VDSS=f(Tj); ID=3.24 mA

Diagram15:Typ.capacitances Diagram16:Typ.Cossstoredenergy
4
10 90

Ciss
80

70

103 60

Coss 50
Eoss[µJ]
C[pF]

40

102 30

Crss 20

10

101 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
VDS[V] VDS[V]
C=f(VDS); VGS=0 V; f=250 kHz Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

Diagram17:Typ.Qossoutputcharge
400

350

300

250
Qoss[nC]

200

150

100

50

0
0 100 200 300 400 500 600
VDS[V]
Qoss=f(VDS)

Final Data Sheet 11 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

6TestCircuits

Table9Bodydiodecharacteristics
Test circuit for body diode characteristics Body diode recovery waveform

VDS
+
VDD

RG2 VDS
IS
- Is
ISO tfr
IS
VDD
dIs / dt

RG1 Ifrm
Qfr

Ifrm

Table10Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS VDD 10%

VGS
VGS
td(on) tr td(off) tf
RG
ton toff

Table11Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

VDSS

VDD
ID
VDS

VDS VDS
ID

Final Data Sheet 12 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

7PackageOutlines

PACKAGE - GROUP
NUMBER: PG-HDSOP-22-U01
MILLIMETERS
DIMENSIONS
MIN. MAX.
A 2.25 2.35
A1 0.00 0.15
A2 0.89 1.10
A3 0.5
b 0.50 0.70
b1 0.50 0.90
c 0.46 0.58
D 15.30 15.50
D1 10.23 10.43
E 14.90 15.10
E1 11.91 12.11
e 1.14
N 22
H 20.86 21.06
L 1.20 1.40
O 0° 8°

Figure1OutlinePG-HDSOP-22,dimensionsinmm

Final Data Sheet 13 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

8AppendixA

Table12RelatedLinks
• IFXCoolSiCªAutomotivePowerDevice750VG1Webpage:www.infineon.com

• IFXCoolSiCªAutomotivePowerDevice750VG1applicationnote:www.infineon.com

• IFXCoolSiCªAutomotivePowerDevice750VG1simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 14 Rev.2.0,2023-08-28

 CoolSiCªAutomotivePowerDevice750VG1
AIMDQ75R008M1H

RevisionHistory
AIMDQ75R008M1H

Revision:2023-08-28,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-08-28 Release of final version

Trademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Final Data Sheet 15 Rev.2.0,2023-08-28

Mouser Electronics

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