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Vishay Semiconductors
High Performance Schottky Rectifier, 100 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
Cathode Anode
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
PowerTab® • Screw mounting only
• Designed and qualified according to JEDEC®-JESD 47
PRODUCT SUMMARY • PowerTab® package
Package PowerTab® • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IF(AV) 100 A
VR 45 V DESCRIPTION
VF at IF 0.71 V The VS-100BGQ045 Schottky rectifier has been optimized
IRM 320 mA at 125 °C for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
TJ max. 150 °C
The proprietary barrier technology allows for reliable
Diode variation Single die operation up to 150 °C junction temperature. Typical
EAS 40 mJ applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
VOLTAGE RATINGS
PARAMETER SYMBOL 100BGQ045 UNITS
Maximum DC reverse voltage VR
45 V
Maximum working peak reverse voltage VRWM
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
50 A 0.54 0.58
TJ = 25 °C
100 A 0.69 0.77
Forward voltage drop VFM (1) V
50 A 0.48 0.52
TJ = 150 °C
100 A 0.65 0.71
TJ = 150 °C, VR = 45 V 600 1000
Reverse leakage current IRM (1) TJ = 25 °C 0.3 1 mA
VR = Rated VR
TJ = 125 °C 180 320
Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 2700 pF
Typical series inductance LS Measured from tab to mounting plane 3.5 nH
Maximum voltage rate of change dV/dt Rated VR 10 000 V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
1000 1000
150°C
100
50°C
1
25°C
0.1
Instantaneous Forward Current - IF (A)
100
0.01
0 5 10 15 20 25 30 35 40 45
10000
10
1000
Tj = 125°C
Tj = 25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 100
0 10 20 30 40 50
Forward Voltage Drop - VFM (V)
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse
Voltage
1
Thermal Impedance ZthJC (°C/W)
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
Single Pulse
(Thermal Resistance)
0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180 120
180°
Allowable Case Temperature (°C)
120°
100 40
Square wave (D=0.50)
80% rated Vr applied
80 20
see note (1)
60 0
0 20 40 60 80 100 120 140 160 0 30 60 90 120 150
Average Forward Current - IF(AV)(A) Average Forward Current - IF(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics
Average Forward Current
10000
Non-Repetitive Surge Current - I FSM (A)
1000
100
10 100 1000 10000
Square Wave Pulse Duration - t p (microsec)
High-speed
IRFP460 switch
D.U.T.
Rg = 25 Ω Freewheel
diode + Vd = 25 V
Current
monitor 40HFL40S02
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
1 2 3 4
1.20 (0.04)
8.80 (0.35)
8.20 (0.32)
15.60 (0.61)
“G” see note
14.80 (0.58)
18.50 (0.73)
17.85 (0.70)
Lead 1
Ø 4.20 (Ø 0.16)
12.40 (0.49)
11.90 (0.47)
Ø 4.00 (Ø 0.15)
27.65 (1.08)
27.25 (1.07)
39.95 (1.57)
39.55 (1.56)
Lead 2
3.15 (0.12)
3.00 (0.11)
5.20 (0.20)
4.95 (0.19)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15) 0.60 (0.02)
1.30 (0.05)
0.40 (0.01)
1.10 (0.04)
5.45 REF.
(0.21 REF.)
4.95 (0.19)
4.75 (0.18)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Note:
Outline conform to JEDEC® TO-275, except for dimension “G” only
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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