Magnetoresistance

RAM

Presented by-
Pankaj Jaiswal
Roll no. 0809131058
 DEFINATION

•MRAM (magnetoresistive random access memory) is a method

of storing data bits using magnetic charges instead of the
electrical charges used by DRAM (dynamic random access
memory).
 MRAM CELL
1.Magnetoresistive random access
memory (MRAM) uses the magnetic
tunnel junction (MTJ) to store
Diode
information
Bit Line
2. MRAM cell composed of a diode
MTJ Stack PCo/
and an MTJ stack Read/Write Current Ni
t
Al
Fe
Co
/F2
Ni/
O
M
/Fe
e3
3. MTJ stack consists of two PFe
n/
tW
Fe

ferromagnetic layers separated by a

thin dielectric barrier
Word Line
MRAM:Reading process

•Transistor is ON
• Measuring of electrical
resistance of a small sense
current from a supply line
through the cell to the
ground.
MRAM:Writing process

•Transistor is OFF
• When current is passed through
the write lines, an induced
magnetic field is created at the
junction, which alters the polarity
of the free layer
 Magnetoresistance
• Magneto résistance is the property of a material to change the
value of its electrical resistance when an external magnetic
field is applied to it.

• Two of the most useful types of magnetoresistance are-

• Giant Magnetoresistance

• Tunneling Magnetoresistance
 Giant Magnetoresistance(GMR)
•Two thin films of altering
ferromagnetic materials and a non-
magnetic layer-spacer.
•Electrons with their spins aligned with the
ferromagnetic moment are less likely to scatter
which leads to lower resistance.

High resistivity = antiparallel alignment

Low resistivity = parallel alignment
 Tunnel Magnetoresistance(TMR)

• Two thin film of altering ferromagnetic

material and an insulating spacer
•TMR is analogous to GMR
Parallel small resistivity large
tunneling probability
Anti-parrallel large resistivity small
tunneling probability
 Other RAM Technologies
DRAM
•Each bit of data is stored in a
separate capacitor within an
integrated circuit

Characteristics
• Volatile
• The highest density RAM currently available
• The least expensive one
• Moderately fast
 SRAM

• Each bit is stored on four transistors that form two cross-

coupled inverters.

Characteristics
• Expensive
• Volatile
• Fast
• Low power consumption
• Less dense than DRAM
 Flash RAM

•Stores information in an array of memory cell made from floating-gate

transistors

Characteristics
• Cheap
• Non-volatile
• Slow
• Enormously durable
 MRAM Vs Other RAM Technologies

MRAM combines the best

characteristics of DRAM,SRAM
and Flash memory

•Non-volatile
Information is saved even when
there is no power

•Immediate boot up
No need to wait for your computer
to boot up
•Low power consumption
•Low cost
•High speed
Application
1.Aerospace and military systems
2.Digital cameras
3.Notebooks
4.Smart cards
5.Mobile telephones
6.Cellular base stations
7.Personal Computers
8.Media players
9.Book readers
 CONCLUSION
• MRAM is a revolutionary memory product that provides the highest
density, the best price/performance, and highest reliability of all
nvRAM product alternatives.
• MRAM technology is well positioned to supply high density, low
cost embedded memory capable of replacing Flash , SRAM, and
EEPROM with a single unified memory in many future
microcontroller products.
THANK YOU