Submitted By:

PANCHI SHARMA
M.tech 2nd year EC-(VLSI)

Introduction
Spintronics is a spin based electronics-

Electron +charge= Electronics.

Electron +spin=Spintronics.
Every electron exist in one of the two
states spin up and spin down with
either positive half or negative half.
Spintronics is a nano technology which
deals with spin dependent properties of
an electron instead of charge dependent
properties.
Adding the spin degree of freedom

provides new effects, new capabilities and

new functionalities

How it relates with

The drastic reduction in the size of integrated circuit, known
VLSI?
as Moores law has been instrumental in the tremendous
success of Very Large Scale Integrated circuits technology.
However power consumption and integration delays are
limiting the performance, hence an emerging technology
called Spintronics or SpinElectonics comes into play.

Electronics V/s Spintronics

GMR
In 1988 France, GMR discovery is

accepted as birth of Spintronics.

A Giant MagnetoResistive device is made
of at least two ferromagnetic layers
separated by a nonmagnetic layer.
A current consisting of spin up and spin
down electron passed through the layers.
Those oriented in the same direction as the
electron spins in a magnetic layers having
low resistance pass through quite easily
while those oriented in opposite direction
having high resistance are scattered.

Parallel & Perpendicular Current GMR

Current runs parallel

between the ferromagnetic layers.

Most commonly used in magnetic
read heads.

In this the electric current flows

in
a direction perpendicular to
the layers.
One ferromagnetic layer working
as spin another as detector.

Spin Valve
If the orintation of the one

of the ferromagnetic layers

be changed then the device
will act as a filter or spin
valve.
Letting
through more
electrons when the spin
orientation in a two layers
are same and fewer when
orientations are oppositely
aligned.

Tunnel MagnetoResistance
Magnetic tunnel junction has two

ferromagnetic layers seperated by an

insulating Metal-oxide-layer.
It is similier to GMR except the thin
layer of insulater sandwiched between
magnetic layers instead of metal layer.
The tunnel magnetic resistance(TMR)
occurs in magnetic tunnel junction.
If the insulating layer is thin enough,
electrons can tunnel from one
ferromagnet into the other.

MRAM
MRAM uses magnetic storage elements instead of electric

used in conventional RAM.

Tunnel junctions are used to read the information stored in
MagnetoResistive Random Access Memory, typically a
0 for zero point magnetization state and 1 for
antiparallel state.

Spin Transistor
Spin transistors would allow control of the spin current

in the same manner that conventional transistors can

switch charge currents.
Its spin state can be detected without the application of
electric current.
Using arrays of spin transistors, MRAM will combine
storage, detection, logic and communication capabilities
on a single chip.
This will remove the distinction between working
memory and storage, combining functionality of many
devices into one.

Datta Das Spin Transistor

The use of semiconductors for

spintronics began with the

theoretical proposal of a spin
field-effect-transistor
by Datta and Das in 1990.
Emitter and collector are
ferromagnetic with parallel
magnetizations.
The gate provides magnetic
field.
Current is modulated by the
degree of precession in
electron spin.

Current Spintronics Devices

Magnetoresistive Random Access Memory

(MRAM)
Spin Transistor
Quantum Computer
Spintronics Scanner
Computer Hard Disk

Limitations
Controlling spin for long distances.
Difficult to Inject and Measure spin.
Interference of fields with nearest elements.
Control of spin in silicon is difficult.

Application of Spin
Position and motion sensing in computer video games.
Magnetic storage is nonvolatile.
Missile guidance.
Semiconductor lasers using spin-polarised electrical

injection.
Spin based transistor.

Conclusion
The future success of spintronics depends on the integration

of spintronics components into conventional semiconductor

structure.
It has vast opportunities for physics, materials and device
engineering & technology.
With lack of dissipation, spintronics may be the best
mechanism for creating ever smaller devices.
Researchers and scientists are taking keen interest.
Universities and electronics industries are collaborating.
Theres huge race going on around the world in exploring
Spintronics.