IGA03N120H2

HighSpeed 2-Technology
C
• Designed for:
- TV – Horizontal Line Deflection
G
• 2nd generation HighSpeed-Technology E

for 1200V applications offers:

- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A P-TO220-3-31 P-TO220-3-34
- simple Gate-Control (FullPAK) (FullPAK)

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC Eoff Tj,max Marking Package Ordering Code

IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector peak current (VGS = 15V) ICpk A
TC = 100°C, f = 32kHz 8.2
Pulsed collector current, tp limited by Tjmax ICpuls 9
Turn off safe operating area - 9
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage VGE ±20 V
Power dissipation Ptot 29 W
TC = 25°C
Operating junction and storage temperature Tj , Tstg -40...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

Power Semiconductors 1 Mar-04, Rev. 2.0

 IGA03N120H2

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 4.3 K/W
junction – case
Thermal resistance, RthJA P-TO-220-3-31 64
junction – ambient P-TO-220-3-34

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 30 0µA 1200 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15V, I C = 3A
T j = 25° C - 2.2 2.8
T j = 15 0° C - 2.5 -
V G E = 10V, I C = 3A ,
T j = 25° C - 2.4 -
Gate-emitter threshold voltage VGE(th) I C = 90µA ,V C E =V G E 2.1 3 3.9
Zero gate voltage collector current ICES V C E = 1200V, V G E = 0V µA
T j = 25° C - - 20
T j = 15 0° C - - 80
Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA
Transconductance gfs V C E = 20V, I C = 3A - 2 - S
Dynamic Characteristic
Input capacitance Ciss V C E = 25V - 205 - pF
Output capacitance Coss V G E = 0V - 24 -
Reverse transfer capacitance Crss f= 1 M Hz - 7 -
Gate charge QGate V C C = 9 60V, I C = 3A - 8.6 - nC
V G E = 1 5V
Internal emitter inductance LE P -T O - 2 20- 3- 31 - 7 - nH
measured 5mm (0.197 in.) from case

Power Semiconductors 2 Mar-04, Rev. 2.0

 IGA03N120H2

Switching Characteristic, Inductive Load, at Tj=25 °C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25° C - 9.2 - ns
Rise time tr V C C = 8 00V, I C = 3A - 5.2 -
Turn-off delay time td(off) V G E = 0V/ 15V - 281 -
Fall time tf R G = 8 2Ω - 29 -
1)
L σ = 180nH
Turn-on energy Eon 1) - 0.14 - mJ
C σ = 4 0 pF
Turn-off energy Eoff Energy losses include - 0.15 -
Total switching energy Ets “tail” and diode 2) - 0.29 -
reverse recovery.

Switching Characteristic, Inductive Load, at Tj=150 °C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 15 0° C - 9.4 - ns
Rise time tr V C C = 8 00V, I C = 3A - 6.7 -
Turn-off delay time td(off) V G E = 0V/ 15V - 340 -
Fall time tf R G = 8 2Ω - 63 -
L σ 1 ) = 180nH
Turn-on energy Eon - 0.22 - mJ
C σ 1 ) = 4 0 pF
Turn-off energy Eoff Energy losses include - 0.26 -
Total switching energy Ets “tail” and diode2) - 0.48 -
reverse recovery.

Switching Energy ZVT, Inductive Load

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-off energy Eoff V C C = 8 00V, I C = 3A mJ
V G E = 0V/ 15V
R G = 8 2Ω , C r 1 ) = 4nF
T j = 25° C - 0.05 -
T j = 15 0° C - 0.09 -

1)
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
2)
Commutation diode from device IKP03N120H2

Power Semiconductors 3 Mar-04, Rev. 2.0

 IGA03N120H2

12A
Ic 10A t p =10 µs
10A
20 µs
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

8A 50 µs
1A 100 µs
T C =25°C
6A
1m s
T C =100°C
4A
0,1A 100m s

2A Ic
DC

0A 0,01A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25°C, Tj ≤ 150°C)
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)

30W 8A

6A
IC, COLLECTOR CURRENT
POWER DISSIPATION

20W

4A

10W
Ptot,

2A

0W 0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function Figure 4. Collector current as a function of
of case temperature case temperature
(Tj ≤ 150°C) (VGE ≤ 15V, Tj ≤ 150°C)

Power Semiconductors 4 Mar-04, Rev. 2.0

 IGA03N120H2

10A 10A

8A 8A

V GE= 1 5 V V G E =15V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

12V 12V
6A 6A
10V 10V
8V 8V

4A 6V 4A 6V

2A 2A

0A 0A
0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics Figure 6. Typical output characteristics
(Tj = 25°C) (Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

12A 3V

10A IC=6A

IC=3A
IC, COLLECTOR CURRENT

8A Tj=+150°C 2V

Tj=+25°C IC=1.5A
6A

4A 1V

2A

0A 0V
3V 5V 7V 9V -50°C 0°C 50°C 100°C 150°C

VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter
(VCE = 20V) saturation voltage as a function of junction
temperature
(VGE = 15V)

Power Semiconductors 5 Mar-04, Rev. 2.0

 IGA03N120H2

1000ns 1000ns

td(off)
td(off)

100ns 100ns
t, SWITCHING TIMES

t, SWITCHING TIMES
tf

tf

td(on) td(on)
10ns 10ns

tr
tr

1ns 1ns
0A 2A 4A 0Ω 50Ω 100Ω 150Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω, VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E) dynamic test circuit in Fig.E)

1000ns 5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE

td(off)

4V

100ns
t, SWITCHING TIMES

tf 3V max.

typ.
td(on) 2V
10ns min.

1V
tr

1ns 0V
25°C 50°C 75°C 100°C 125°C 150°C -50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage
function of junction temperature as a function of junction temperature
(inductive load, VCE = 800V, (IC = 0.09mA)
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)

Power Semiconductors 6 Mar-04, Rev. 2.0

 IGA03N120H2

1.0mJ 1
1 ) Eon and Ets include losses 1
) Eon and Ets include losses 0.7mJ Ets
1 due to diode recovery.
due to diode recovery. Ets
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

0.6mJ

0.5mJ
Eoff
0.5mJ
0.4mJ

1
Eon 0.3mJ
Eoff

1
0.2mJ Eon

0.0mJ
0A 2A 4A 0Ω 50Ω 100Ω 150Ω 200Ω 250Ω

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, Tj = 150°C, (inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω, VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E )

0.5mJ
1
) Eon and Ets include losses Ets
1
IC=3A, TJ=150°C
due to diode recovery. 0.16mJ
Eoff, TURN OFF SWITCHING ENERGY LOSS
E, SWITCHING ENERGY LOSSES

0.4mJ
0.12mJ

0.3mJ
IC=3A, TJ=25°C
0.08mJ
Eoff
IC=1A, TJ=150°C
1
0.2mJ Eon

0.04mJ
IC=1A, TJ=25°C
0.1mJ
0.00mJ
0V/us 1000V/us 2000V/us 3000V/us
25°C 80°C 125°C 150°C

Tj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE

Figure 15. Typical switching energy losses Figure 16. Typical turn off switching energy
as a function of junction temperature loss for soft switching
(inductive load, VCE = 800V, (dynamic test circuit in Fig. E)
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E )

Power Semiconductors 7 Mar-04, Rev. 2.0

 IGA03N120H2

1nF
20V

C iss

VGE, GATE-EMITTER VOLTAGE

15V
UCE=240V
C, CAPACITANCE

100pF
10V
UCE=960V
C oss

5V

10pF C rss

0V
0nC 10nC 20nC 30nC
0V 10V 20V 30V

VCE, COLLECTOR-EMITTER VOLTAGE QGE, GATE CHARGE

Figure 19. Typical capacitance as a Figure 18. Typical gate charge
function of collector-emitter voltage (IC = 3A)
(VGE = 0V, f = 1MHz)

1
10 K/W

D=0.5 0.1 0.2

ZthJC, TRANSIENT THERMAL RESISTANCE

0
10 K/W

R,(K/W) τ, (s)
1,4285 5,2404
1,8838 1,7688
0,4057 0,07592
0.05
-1
10 K/W 0,4234 0,005018
0.02 0,3241 0,000595
0,1021 0,000126
0.01 0,1340 0,000018

R1 R2
-2
10 K/W
single pulse
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2

1µs 10µs 100µs 1ms 10ms100ms 1s 10s

tP, PULSE WIDTH
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(D=tP/T)

Power Semiconductors 8 Mar-04, Rev. 2.0

 IGA03N120H2

TO-220-3-31 (FullPAK)
dimensions
symbol [mm] [inch]
min max min max
A 10.37 10.63 0.4084 0.4184
B 15.86 16.12 0.6245 0.6345
C 0.65 0.78 0.0256 0.0306
D 2.95 typ. 0.1160 typ.
E 3.15 3.25 0.124 0.128
F 6.05 6.56 0.2384 0.2584
G 13.47 13.73 0.5304 0.5404
H 3.18 3.43 0.125 0.135
K 0.45 0.63 0.0177 0.0247
L 1.23 1.36 0.0484 0.0534
M 2.54 typ. 0.100 typ.
N 4.57 4.83 0.1800 0.1900
P 2.57 2.83 0.1013 0.1113
T 2.51 2.62 0.0990 0.1030

TO-220-3-34 (FullPAK)
dimensions
symbol [mm] [inch]
min max min max
A 10.37 10.63 0.4084 0.4184
B 15.86 16.12 0.6245 0.6345
C 0.65 0.78 0.0256 0.0306
D 2.95 typ. 0.1160 typ.
E 3.15 3.25 0.124 0.128
F 6.05 6.56 0.2384 0.2584
G 8.28 8.79 0.326 0.346
H 3.18 3.43 0.125 0.135
K 0.45 0.63 0.0177 0.0247
L 1.23 1.36 0.0484 0.0534
M 2.54 typ. 0.100 typ.
N 4.57 4.83 0.1800 0.1900
P 2.57 2.83 0.1013 0.1113
T 2.51 2.62 0.0990 0.1030
U 5.00 typ. 0.197 typ.

1: Gate
2: Collector
3: Emitter

Power Semiconductors 9 Mar-04, Rev. 2.0

 IGA03N120H2

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Bereich Kommunikation
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© Infineon Technologies AG 1999
All Rights Reserved.

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Power Semiconductors 10 Mar-04, Rev. 2.0