AP30G120ASW

RoHS-compliant Product
Advanced Power N-CHANNEL INSULATED GATE
Electronics Corp. BIPOLAR TRANSISTOR WITH FRD.

Features
▼ High Speed Switching VCES 1200V
▼ Low Saturation Voltage IC 30A
V CE(sat)=2.9V@IC=30A C
▼ CO-PAK, IGBT With FRD G
▼ RoHS Compliant C TO-3P G
E

Absolute Maximum Ratings E

Symbol Parameter Rating Units
VCES Collector-Emitter Voltage 1200 V
VGE Gate-Emitter Voltage +30 V
IC@TC=25℃ Continuous Collector Current 60 A
IC@TC=100℃ Continuous Collector Current 30 A
ICM Pulsed Collector Current1 120 A
IF@TC=100℃ Diode Continunous Forward Current 6 A
IFM Diode Pulse Forward Current 40 A
PD@TC=25℃ Maximum Power Dissipation 208 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
TL Maximum Lead Temp. for Soldering Purposes 300 ℃
, 1/8" from case for 5 seconds .

Notes:
1.Pulse width limited by max . junction temperature .

Thermal Data
Symbol Parameter Value Units
Rthj-c(IGBT) Thermal Resistance Junction-Case 0.6 ℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case 2 ℃/W
Rthj-a Thermal Resistance Junction-Ambient 40 ℃/W

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
IGES Gate-to-Emitter Leakage Current VGE=+30V, VCE=0V - - +500 nA
ICES Collector-Emitter Leakage Current VCE=1200V, VGE=0V - - 1 mA
VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=30A - 2.9 3.6 V
VGE=15V, IC=60A - 3.7 - V
VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 3 - 7 V
Qg Total Gate Charge IC=30A - 63 100 nC
Qge Gate-Emitter Charge VCC=500V - 12 - nC
Qgc Gate-Collector Charge VGE=15V - 32 - nC
td(on) Turn-on Delay Time VCC=600V, - 40 - ns
tr Rise Time Ic=30A, - 45 - ns
VGE=15V,
td(off) Turn-off Delay Time - 125 - ns
RG=5Ω,
tf Fall Time - 430 860 ns
Inductive Load
Eon Turn-On Switching Loss - 1.3 - mJ
Eoff Turn-Off Switching Loss - 3.1 - mJ
Cies Input Capacitance VGE=0V - 1400 2240 pF
Coes Output Capacitance VCE=30V - 120 - pF
Cres Reverse Transfer Capacitance f=1.0MHz - 15 - pF
Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)
VF Forward Voltage IF=6A - 2.6 3 V
VF Forward Voltage IF=20A - - 4 V
trr Reverse Recovery Time IF=10A - 54 - ns
Qrr Reverse Recovery Charge di/dt = 100 A/µs - 138 - nC

Data and specifications subject to change without notice 1

201107182
AP30G120ASW

160 120

o
20V 20V
T C =25 C 18V o
T C =150 C 18V
15V 100
15V
IC , Collector Current (A)

IC , Collector Current (A)

120

80
12V

80 12V 60

V GE =10V
40

40 V GE =10V
20

0 0
0 4 8 12 16 20 0 4 8 12 16

V CE , Collector-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

120 6

V GE = 15 V
V GE =15V
100
5
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)

80
I C = 60 A
T C =25 ℃ T C =150 ℃ 4

60
I C =30A
3

40

2
20

0 1
0 2 4 6 8 10 0 40 80 120 160

o
V CE , Collector-Emitter Voltage (V) Junction Temperature ( C)

Fig 3. Typical Saturation Voltage Fig 4. Typical Collector- Emitter Voltage

Characteristics v.s. Junction Temperature
f=1.0MHz
2 2400

I C =1mA
2000
1.6
Capacitance (pF)
Normalized VGE(th) (V)

1600

1.2
C ies
1200

0.8

800

0.4
400

C oes
0 0 C res
-50 0 50 100 150 1 5 9 13 17 21 25 29 33 37

Junction Temperature ( C )
o V CE , Collector-Emitter Voltage (V)

Fig 5. Gate Threshold Voltage Fig 6. Typical Capacitance Characterisitics

v.s. Junction Temperature

2
 AP30G120ASW

1000 1

V GE =15V

Normalized Thermal Response (Rthjc)

T C =125 o C Duty factor=0.5
IC, Peak Collector Current(A)

100 0.2

0.1
0.1

0.05

PDM
10
0.02
t
T
0.01

Duty factor = t/T

Peak Tj = PDM x Rthjc + T C
Single Pulse
Safe Operating Area
1 0.01
1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1

V CE , Collector-Emitter Voltage(V) t , Pulse Width (s)

Fig 7. Turn-off SOA Fig 8. Effective Transient Thermal

Impedance
10 10

o
T C =25 C
TC=150oC
VCE , Collector-Emitter Voltage(V)

VCE , Collector-Emitter Voltage(V)

8 8

6 6

I C = 60 A
4
I C = 60 A 4

I C = 30 A
I C = 30 A

2
I C = 15 A I C = 15 A
2

0 0
0 4 8 12 16 20 0 4 8 12 16 20

V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V)

Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE

100 16

I C = 30 A
V CC =500V
VGE , Gate -Emitter Voltage (V)
IF , Forward Current (A)

12

10

T j =150 o C T j =25 o C
8

0.1 0
0 1 2 3 4 0 20 40 60 80

V F , Forward Voltage (V) Q G , Gate Charge (nC)

Fig11. Forward Characteristic of Fig 12. Gate Charge Characterisitics

Diode

3
AP30G120ASW

80
IC , Maximum DC Collector Current (A)

60

40

20

0
25 50 75 100 125 150

T C , Case Temperature ( ℃ )

Fig 13. Maximum Collector Current VS.

Case Temperature