RGS00TS65EHR

650V 50A Field Stop Trench IGBT Datasheet

lOutline
VCES 650V TO-247N

IC (100°C) 50A
VCE(sat) (Typ.) 1.65V
PD 326W (1) (2)(3)

lInner Circuit
(2)
lFeatures (1) Gate
1) Low Collector - Emitter Saturation Voltage *1 (2) Collector
(3) Emitter
2) Short Circuit Withstand Time 8μs (1)
*1 Built in FRD
3) Qualified to AEC-Q101
(3)
4) Built in Very Fast & Soft Recovery FRD
lPackaging Specifications
5) Pb - free Lead Plating ; RoHS Compliant
Packaging Tube
Reel Size (mm) -
lApplication
Tape Width (mm) -
General Inverter Type
Basic Ordering Unit (pcs) 450
for Automotive and Industrial Use
Packing Code C11
Marking RGS00TS65E

lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)

Parameter Symbol Value Unit
Collector - Emitter Voltage VCES 650 V
Gate - Emitter Voltage VGES ±30 V
TC = 25°C IC 88 A
Collector Current
TC = 100°C IC 50 A
*1
Pulsed Collector Current ICP 150 A
TC = 25°C IF 84 A
Diode Forward Current
TC = 100°C IF 50 A
Diode Pulsed Forward Current IFP*1 150 A
TC = 25°C PD 326 W
Power Dissipation
TC = 100°C PD 163 W
Operating Junction Temperature Tj -40 to +175 °C
Storage Temperature Tstg -55 to +175 °C
*1 Pulse width limited by Tjmax.

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 RGS00TS65EHR Datasheet

lThermal Resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.46 C/W
Thermal Resistance Diode Junction - Case Rθ(j-c) - - 0.80 C/W

lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Collector - Emitter Breakdown

BVCES IC = 10μA, VGE = 0V 650 - - V
Voltage

VCE = 650V, VGE= 0V,

Collector Cut - off Current ICES Tj = 25oC - - 10 μA
Tj = 175oC*2 - - 5 mA

Gate - Emitter Leakage

IGES VGE = ±30V, VCE = 0V - - ±200 nA
Current

Gate - Emitter Threshold

VGE(th) VCE = 5V, IC = 2.5mA 5.0 6.0 7.0 V
Voltage

IC = 50A, VGE = 15V,

Collector - Emitter Saturation
VCE(sat) Tj = 25°C - 1.65 2.10 V
Voltage
Tj = 175°C - 2.15 -

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 RGS00TS65EHR Datasheet

lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Input Capacitance Cies VCE = 30V, - 1568 -
Output Capacitance Coes VGE = 0V, - 134 - pF
Reverse transfer Capacitance Cres f = 1MHz - 23 -
Total Gate Charge Qg VCE = 300V, - 58 -
Gate - Emitter Charge Qge IC = 50A, - 15 - nC
Gate - Collector Charge Qgc VGE = 15V - 24 -
Turn - on Delay Time td(on) - 36 -
IC = 50A, VCC = 400V,
Rise Time tr - 21 -
VGE = 15V, RG = 10Ω, ns
Turn - off Delay Time td(off) Tj = 25°C - 115 -
Fall Time tf Inductive Load - 91 -
*Eon include diode
Turn - on Switching Loss Eon - 1.46 -
reverse recovery mJ
Turn - off Switching Loss Eoff - 1.29 -
Turn - on Delay Time td(on) - 37 -
IC = 50A, VCC = 400V,
Rise Time tr - 33 -
VGE = 15V, RG = 10Ω, ns
Turn - off Delay Time td(off) Tj = 175°C - 145 -
Fall Time tf Inductive Load - 154 -
*Eon include diode
Turn - on Switching Loss Eon - 2.00 -
reverse recovery mJ
Turn - off Switching Loss Eoff - 1.87 -
IC = 150A, VCC = 520V,
Reverse Bias
RBSOA VP = 650V, VGE = 15V, FULL SQUARE -
Safe Operating Area
RG = 50Ω, Tj = 175oC
VCC ≤ 360V,
Short Circuit Withstand Time tsc 8 - - μs
VGE = 15V, Tj = 25oC
VCC ≤ 360V,
Short Circuit Withstand Time tsc*2 6 - - μs
VGE = 15V, Tj = 150oC
*2 Design assurance without measurement

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 RGS00TS65EHR Datasheet

lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
IF = 50A,
Diode Forward Voltage VF Tj = 25°C - 1.45 1.90 V
Tj = 175°C - 1.50 -

Diode Reverse Recovery

trr - 113 - ns
Time

Diode Peak Reverse IF = 50A,

Irr - 14.1 - A
Recovery Current VCC = 400V,
diF/dt = 200A/μs,
Diode Reverse Recovery
Qrr Tj = 25°C - 0.92 - μC
Charge

Diode Reverse Recovery

Err - 275 - μJ
Energy

Diode Reverse Recovery

trr - 256 - ns
Time

Diode Peak Reverse IF = 50A,

Irr - 18.6 - A
Recovery Current VCC = 400V,
diF/dt = 200A/μs,
Diode Reverse Recovery
Qrr Tj = 175°C - 2.54 - μC
Charge

Diode Reverse Recovery

Err - 565 - μJ
Energy

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 RGS00TS65EHR Datasheet

lElectrical Characteristic Curves

Fig.1 Power Dissipation Fig.2 Collector Current

vs. Case Temperature vs. Case Temperature
350 100
90
300
80
Power Dissipation : PD [W]

Collector Current : IC [A]

250 70

200 60
50
150 40
100 30
20
50 Tj ≤ 175ºC,
10 VGE ≥ 15V
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Case Temperature : TC [°C ] Case Temperature : TC [°C ]

Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area

1000 200
10μs 180
100 160
Collector Current : IC [A]

Collector Current : IC [A]

140
100μs
10 120
100
1 80
60
0.1 40
TC = 25ºC Tj ≤ 175ºC,
20 VGE = 15V
Single Pulse
0.01 0
1 10 100 1000 0 200 400 600 800
Collector To Emitter Voltage : VCE [V] Collector To Emitter Voltage : VCE [V]

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 RGS00TS65EHR Datasheet

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics

150 150
Tｊ = 25ºC Tｊ = 175ºC
125 VGE = 20V 125
Collector Current : IC [A]

Collector Current : IC [A]

VGE = 15V
VGE = 20V
100 VGE = 12V 100 VGE = 15V
VGE = 12V
75 75
VGE = 10V
50 50 VGE = 10V

25 25
VGE = 8V
VGE = 8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector To Emitter Voltage : VCE [V] Collector To Emitter Voltage : VCE [V]

Fig.8 Typical Collector To Emitter Saturation

Fig.7 Typical Transfer Characteristics
Voltage vs. Junction Temperature
80 4
VCE = 10V VGE = 15V
IC = 100A
70
Collector To Emitter Saturation

3
Collector Current : IC [A]

60
Voltage : VCE(sat) [V]

50
IC = 50A
40 2

30
IC = 25A
20 Tj = 175ºC
1

10
Tj = 25ºC
0 0
0 2 4 6 8 10 12 14 25 50 75 100 125 150 175
Gate To Emitter Voltage : VGE [V] Junction Temperature : Tj [°C ]

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 RGS00TS65EHR Datasheet

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage Voltage vs. Gate To Emitter Voltage
20 20
Tj = 25ºC Tj = 175ºC
Collector To Emitter Saturation

Collector To Emitter Saturation

IC = 100A IC = 100A
15 15
IC = 50A
Voltage : VCE(sat) [V]

Voltage : VCE(sat) [V]

IC = 50A
IC = 25A IC = 25A
10 10

5 5

0 0
5 10 15 20 5 10 15 20
Gate To Emitter Voltage : VGE [V] Gate To Emitter Voltage : VGE [V]

Fig.11 Typical Switching Time Fig.12 Typical Switching Time

vs. Collector Current vs. Gate Resistance
1000 1000
td(off)
tf
tf
Switching Time [ns]

Switching Time [ns]

100 100 td(off)

td(on) td(on)

tr
10 10
tr
VCC = 400V, VGE = 15V, VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC IC = 50A, Tj = 175ºC
Inductive load Inductive load
1 1
0 25 50 75 100 0 10 20 30 40 50
Collecter Current : IC [A] Gate Resistance : RG [Ω]

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 RGS00TS65EHR Datasheet

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses Fig.14 Typical Switching Energy Losses
vs. Collector Current vs. Gate Resistance
10 10

Eon
Switching Energy Losses [mJ]

Switching Energy Losses [mJ]

Eoff Eoff
1 1

Eon

0.1 0.1

VCC = 400V, VGE = 15V, VCC = 400V, IC = 50A,

RG = 10Ω, Tj = 175ºC VGE = 15V, Tj = 175ºC
Inductive load Inductive load
0.01 0.01
0 25 50 75 100 0 10 20 30 40 50
Collecter Current : IC [A] Gate Resistance : RG [Ω]

Fig.15 Typical Capacitance

Fig.16 Typical Gate Charge
vs. Collector To Emitter Voltage
10000 15
200V
Gate To Emitter Voltage : V GE [V]

Cies 300V
1000
Capacitance [pF]

10 400V
Coes
100

5
Cres
10
f = 1MHz,
VGE = 0V, IC = 50A,
Tj = 25ºC Tj = 25ºC
1 0
0.01 0.1 1 10 100 0 10 20 30 40 50 60
Collector To Emitter Voltage : VCE [V] Gate Charge : QG [nC]

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 RGS00TS65EHR Datasheet

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current Fig.18 Typical Diode Revese Recovery Time
vs. Forward Voltage vs. Forward Current
150 400
VCC = 400V,
diF/dt = 200A/μs

Reverse Recovery Time : trr [ns]

125 Inductive load
300
Forward Current : IF [A]

Tj = 175ºC
100

75 200

Tj = 25ºC
50
100
25 Tj = 175ºC

Tj = 25ºC
0 0
0 1 2 3 0 25 50 75 100
Forward Voltage : VF [V] Forward Current : IF [A]

Fig.19 Typical Diode Reverse Recovery Fig.20 Typical Diode Rrverse Recovery
　　　　　　Current vs. Forward Current 　　　　　Energy Losses vs. Forward Current
30 1
Reverse Recovery Energy Losses : Err (mJ)

0.9
Reverse Recovery Current : Irr (A)

25 0.8
Tj = 175ºC 0.7
20
0.6
15 0.5
Tj = 25ºC 0.4 RG = 10Ω
10 0.3 RG = 20Ω
0.2
5 VCC = 400V, VCC = 400V, RG = 50Ω
diF/dt = 200A/μs 0.1 Tj = 175oC
Inductive load Inductive load
0 0
0 25 50 75 100 0 25 50 75 100
Forward Current : IF [A] Forward Current : IF [A]

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 RGS00TS65EHR Datasheet

lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

1
0.2 0.1 0.05 0.02
D = 0.5
Transient Thrmal Impedance

0.1
: Zθ(j-c) [°C/W]

PDM

0.01 t1
t2
Duty = t1/t2
0.01 Peak Tj = PDM×Zθ(j-c)+TC

Single Pulse C1 C2 C3 R1 R2 R3
4.727m 49.61m 75.08m 254.6m 191.9m 13.50m
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Pulse Width : t1 [s]

Fig.22 Diode Transient Thermal Impedance

1
D = 0.5
0.05 0.1 0.2
Transient Thrmal Impedance

0.1
: Zθ(j-c) [°C/W]

PDM

0.01 Single Pulse t1

t2
0.01 Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
C1 C2 C3 R1 R2 R3
0.302m 0.396m 2.865m 102.7m 197.9m 499.4m
0.001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Pulse Width : t1 [s]

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 RGS00TS65EHR Datasheet

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%
D.U.T.

D.U.T.
10%
VGE

VG
90%

Fig.23 Inductive Load Circuit 10%

IC tf
td(off)
td(on) tr

trr , Qrr ton toff

IF

VCE
diF/dt

10%
Irr VCE(sat)
Eon Eoff

Fig.25 Diode Reverse Recovery Waveform Fig.24 Inductive Load Waveform

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 Notice

Notes
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