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PD-94576A
IRGIB10B60KD1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF. IC = 10A, TC=100°C
• 10µs Short Circuit Capability.
• Square RBSOA. G
tsc > 10µs, TJ=150°C
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient. E
• Maximum Junction Temperature Rated at 175°C
n-channel VCE(on) typ. = 1.7V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220
Absolute Maximum Ratings Full-Pak
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 10 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 32
ILM Clamped Inductive Load current c 32
IF @ TC = 25°C Diode Continuous Forward Current 16
IF @ TC = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 32
VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min 2500 V
VGE Gate-to-Emitter Voltage ±20
PD @ TC = 25°C Maximum Power Dissipation 44 W
PD @ TC = 100°C Maximum Power Dissipation 22
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 3.4
RθJC Junction-to-Case- Diode ––– ––– 5.3 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 62
Wt Weight ––– 2.0 ––– g
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2/27/04
IRGIB10B60KD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.99 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
1.50 1.70 2.10 IC = 10A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Voltage — 2.05 2.35 V IC = 10A, VGE = 15V, TJ = 150°C
— 2.06 2.35 IC = 10A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
gfe Forward Transconductance — 5.0 — S VCE = 50V, IC = 10A, PW = 80µs
— 1.0 150 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current — 90 250 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 150 400 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.80 2.40 V IF = 5.0A, VGE = 0V
— 1.32 1.74 IF = 5.0A, VGE = 0V, TJ = 150°C
— 1.23 1.62 IF = 5.0A, VGE = 0V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 41 62 IC = 10A
Qge Gate-to-Emitter Charge (turn-on) — 4.6 6.9 nC VCC = 400V
Qgc Gate-to-Collector Charge (turn-on) — 19 29 VGE = 15V
Eon Turn-On Switching Loss — 156 264 IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss — 165 273 µJ VGE = 15V, RG = 50Ω, L = 1.07mH
Etot Total Switching Loss — 321 434 Ls= 150nH, TJ = 25°C d
td(on) Turn-On delay time — 25 33 IC = 10A, VCC = 400V
tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.1mH
td(off) Turn-Off delay time — 180 250 Ls= 150nH, TJ = 25°C
tf Fall time — 62 87
Eon Turn-On Switching Loss — 261 372 IC = 10A, VCC = 400V
Eoff Turn-Off Switching Loss — 313 425 µJ VGE = 15V, RG = 50Ω, L = 1.07mH
Etot Total Switching Loss — 574 694 Ls= 150nH, TJ = 150°C d
td(on) Turn-On delay time — 22 31 IC = 8.0A, VCC = 400V
tr Rise time — 24 34 ns VGE = 15V, RG = 50Ω, L = 1.07mH
td(off) Turn-Off delay time — 240 340 Ls= 150nH, TJ = 150°C
tf Fall time — 48 67
LE Internal Emitter Inductance — 7.5 — nH Measured 5 mm from package
Cies Input Capacitance — 610 915 VGE = 0V
Coes Output Capacitance — 66 99 pF VCC = 30V
Cres Reverse Transfer Capacitance — 23 35 f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 32A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50Ω
SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 50Ω
VCC=360V,VGE = +15V to 0V
ISC (PEAK) Peak Short Circuit Collector Current — 100 — A
Erec Reverse Recovery Energy of the Diode — 99 128 µJ TJ = 150°C
trr Diode Reverse Recovery Time — 79 103 ns VCC = 400V, IF = 10A, L = 1.07mH
Irr Peak Reverse Recovery Current — 14 18 A VGE = 15V, RG = 50Ω
Qrr Diode Reverse Recovery Charge — 553 719 nC di/dt = 500A/µs
Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω. Energy losses include "tail" and diode reverse recovery.
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IRGIB10B60KD1
20 50
45
16 40
35
12 30
Ptot (W)
IC (A)
25
8 20
15
4 10
5
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180
T C (°C) T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case
Case Temperature Temperature
100 100
10 10 µs
100 µs
IC (A)
IC A)
1 10
1ms
0.1
DC
0.01
1
1 10 100 1000 10000
10 100 1000
VCE (V)
VCE (V)
IRGIB10B60KD1
20 20
VGE = 18V VGE = 18V
18 18
VGE = 15V VGE = 15V
16 VGE = 12V 16 VGE = 12V
VGE = 10V VGE = 10V
14 14
VGE = 8.0V VGE = 8.0V
12 12
ICE (A)
ICE (A)
10 10
8 8
6 6
4 4
2 2
0 0
0 2 4 6 0 2 4 6
VCE (V) VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs
20 40
18 VGE = 18V -40°C
35
VGE = 15V 25°C
16 150°C
VGE = 12V 30
14 VGE = 10V
VGE = 8.0V 25
12
ICE (A)
IF (A)
10 20
8
15
6
10
4
2 5
0 0
0 2 4 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCE (V) VF (V)
Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs tp = 80µs
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IRGIB10B60KD1
20 20
18 18
16 16
14 14
12 ICE = 5.0A 12 ICE = 5.0A
VCE (V)
VCE (V)
10 ICE = 10A 10 ICE = 10A
ICE = 20A ICE = 20A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)
Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 100
18 90 T J = 25°C
16 80 T J = 150°C
14 70
12 ICE = 5.0A 60
VCE (V)
ICE (A)
10 ICE = 10A
50
ICE = 20A
8 40
6 30
4 20 T J = 150°C
2 10 T J = 25°C
0 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)
IRGIB10B60KD1
700 1000
600 tdOFF
500 EOFF
400
EON tF
300 tdON
tR
200 10
100
0
0 5 10 15 20 1
0 5 10 15 20
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.07mH; VCE= 400V TJ = 150°C; L=1.07mH; VCE= 400V
RG= 50Ω; VGE= 15V RG= 50Ω; VGE= 15V
1000 10000
EOFF
800
EON
Swiching Time (ns)
1000
tdOFF
Energy (µJ)
600
400
100
tF
200
tR
tdON
0 10
0 100 200 300 400 500 0 100 200 300 400 500
RG (Ω) RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.07mH; VCE= 400V TJ = 150°C; L=1.07mH; VCE= 400V
ICE= 10A; VGE= 15V ICE= 10A; VGE= 15V
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IRGIB10B60KD1
15 16
RG = 50 Ω 14
12
10 RG = 150 Ω
10
IRR (A)
IRR (A)
RG = 270 Ω 8
6
5
RG = 470 Ω
4
0 0
0 5 10 15 20 0 100 200 300 400 500
IF (A) RG (Ω)
Fig. 17 - Typical Diode IRR vs. IF Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C TJ = 150°C; IF = 10A
16 1000
50Ω
14 150Ω
20A
800
12 270 Ω
10A
470Ω
10 600
Q RR (nC)
IRR (A)
8
400
6 5.0A
4 200
2
0
0
0 100 200 300 400 500 600
0 200 400 600
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 19- Typical Diode IRR vs. diF/dt Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; VCC= 400V; VGE= 15V;TJ = 150°C
ICE= 10A; TJ = 150°C
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IRGIB10B60KD1
200
160
Energy (µJ)
120
470 Ω
270 Ω
80
150 Ω
50 Ω
40
0 5 10 15 20 25
IF (A)
1000 16
14
Cies
300V
12 400V
Capacitance (pF)
10
VGE (V)
100 8
6
Coes
4
Cres 2
0
10
0 10 20 30 40 50
1 10 100
Q G , Total Gate Charge (nC)
VCE (V)
Fig. 22- Typ. Capacitance vs. VCE Fig. 23 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 10A; L = 2500µH
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IRGIB10B60KD1
10
D = 0.50
Thermal Response ( Z thJC )
1 0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τJ τC 0.3628 0.00018
0.1 0.02 τJ τ
τ1 τ2
0.2582 0.000695
0.01 τ3 τ4
τ1 τ2 τ3 τ4 1.1008 0.075305
Ci= τi/Ri 1.6973 1.781
Ci i/Ri
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
10
D = 0.50
Thermal Response ( Z thJC )
1 0.20
0.10 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τJ τC 0.9004 0.000103
0.05 τJ τ
τ1 τ2
1.3642 0.000693
τ3 τ4
τ1 τ2 τ3 τ4
0.02 1.4540 0.033978
0.1 Ci= τi/Ri
0.01 1.5805 1.6699
Ci i/Ri
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
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IRGIB10B60KD1
L
L
VCC 80 V +
DUT DUT
0 - 480V
Rg
1K
diode clamp /
DUT
Driver L
- 5V
DC 360V DUT /
DRIVER VCC
DUT Rg
VCC
R=
ICM
DUT VCC
Rg
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IRGIB10B60KD1
600 15 600 30
tf
500 12.5
Vce 500 25
tr Vce
400 10 Ice
400 20
90% Ice 90% Ice
300 7.5
10% Ice
5% Vce 300 15
(A)
Vce (V)
Vce (V)
Ice (A)
Ice(A)
200 5
Ice
5% Ice 200 10
100 2.5
Ice
100 5
0 0 5% Vce
Eoff Loss
0 0
-100 -2.5
Eon
Loss
-200 -5 -100 -5
0.4 0.6 0.8 1 1.2 0.05 0.15 0.25 0.35
Time (uS) Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4
0 10
-200 0
Vce (V)
Ice (A)
Vf (V)
If (A)
200 100
-300 -5
Peak 10% Peak
IRR IRR
-400 -10 100 50
-500 -15
0 0
-600 -20
0.00 10.00 20.00 30.00 40.00 50.00
0.20 0.30 0.40 0.50 0.60
Tim e (uS)
Time (uS)
Fig. WF3- Typ. Diode Recovery Waveform Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.4 @ TC = 150°C using Fig. CT.3
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IRGIB10B60KD1
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
10.60 (.417) 3.40 (.133) 4.80 (.189)
10.40 (.409) ø
3.10 (.123) 4.60 (.181)
2.80 (.110)
-A- 2.60 (.102)
3.70 (.145) LEAD ASSIGNMENTS
3.20 (.126) 7.10 (.280) 1 - GATE
6.70 (.263) 2 - DRAIN
3 - SOURCE
16.00 (.630)
15.80 (.622)
1.15 (.045) NOTES:
MIN.
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
1 2 3
2 CONTROLLING DIMENSION: INCH.
3.30 (.130)
3.10 (.122)
-B-
13.70 (.540)
13.50 (.530)
C
D
A
0.48 (.019) B
0.90 (.035) 3X
1.40 (.055) 3X 0.70 (.028) 0.44 (.017)
3X
1.05 (.042) 2.85 (.112)
0.25 (.010) M A M B 2.65 (.104) MINIMUM CREEPAGE
2.54 (.100) DISTANCE BETWEEN
2X A-B-C-D = 4.80 (.189)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.2/04
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