TYPICAL PERFORMANCE CURVES 1200V

APT75GP120JDQ3

® APT75GP120JDQ3

E E
POWER MOS 7 IGBT ®

7
G C - 22
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch S OT
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
"UL Recognized"
ISOTOP ® file # E145592

• Low Conduction Loss • 50 kHz operation @ 800V, 20A

• Low Gate Charge • 20 kHz operation @ 800V, 44A
• Ultrafast Tail Current shutoff • RBSOA Rated
C

G
E

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter APT75GP120JDQ3 UNIT

VCES Collector-Emitter Voltage 1200

Volts
VGE Gate-Emitter Voltage ±20
I C1 Continuous Collector Current @ TC = 25°C 128
I C2 Continuous Collector Current @ TC = 110°C 57 Amps
1
I CM Pulsed Collector Current @ TC = 150°C 300
RBSOA Reverse Bias Safe Operating Area @ TJ = 150°C 300A @ 960V
PD Total Power Dissipation 543 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX Units

V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250µA) 1200

VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) 3 4.5 6
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) 3.3 3.9
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) 3.0
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 1250
I CES µA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 5500
10-2005

I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA

Rev A

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7458
 DYNAMIC CHARACTERISTICS APT75GP120JDQ3
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Cies Input Capacitance Capacitance 7035
Coes Output Capacitance VGE = 0V, VCE = 25V 460 pF
Cres Reverse Transfer Capacitance f = 1 MHz 80
VGEP Gate-to-Emitter Plateau Voltage Gate Charge 7.5 V
Qg 3 VGE = 15V 320
Total Gate Charge
Qge Gate-Emitter Charge VCE = 600V 50 nC
Qgc Gate-Collector ("Miller ") Charge I C = 75A 140
TJ = 150°C, R G = 5Ω, VGE =
RBSOA Reverse Bias Safe Operating Area 300 A
15V, L = 100µH,VCE = 960V
td(on) Turn-on Delay Time Inductive Switching (25°C) 20
tr Current Rise Time VCC = 600V 40 ns
td(off) Turn-off Delay Time VGE = 15V
165
tf I C = 75A
Current Fall Time 55
RG = 5Ω
Eon1 Turn-on Switching Energy 4
1620
TJ = +25°C
Eon2 Turn-on Switching Energy (Diode) 5
4100 µJ
Eoff 6
Turn-off Switching Energy 2500
td(on) Turn-on Delay Time Inductive Switching (125°C) 20
tr Current Rise Time VCC = 600V 40 ns
td(off) Turn-off Delay Time VGE = 15V
245
tf I C = 75A
Current Fall Time 115
RG = 5Ω
Eon1 Turn-on Switching Energy 44
1620
TJ = +125°C
Eon2 Turn-on Switching Energy (Diode) 55
5850 µJ
Eoff 6
Turn-off Switching Energy 4820

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case (IGBT) .23
°C/W
RθJC Junction to Case (DIODE) .56
WT Package Weight 29.2 gm

VIsolation RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 Volts

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
10-2005

6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the specifications and information contained herein.
Rev A
050-7458
TYPICAL PERFORMANCE CURVES APT75GP120JDQ3
160 160
V = 15V V = 10V
GE GE
250µs PULSE TEST 250µs PULSE TEST
140 <0.5 % DUTY CYCLE 140 <0.5 % DUTY CYCLE

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

120 120

100 100
TJ = 25°C
80 80
TJ = 25°C TJ = 125°C
60 60
TJ = 125°C
40 40

20 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)
250 16
250µs PULSE I = 75A
TEST<0.5 % DUTY C
T = 25°C

VGE, GATE-TO-EMITTER VOLTAGE (V)

CYCLE J
14
VCE = 240V
IC, COLLECTOR CURRENT (A)

200
12
VCE = 600V
10
150

8
TJ = -55°C
VCE = 960V
100 6
TJ = 25°C
TJ = 125°C 4
50
2

0 0
0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
5 5.0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

IC = 150A TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 150A
4 4.0
IC = 75A
IC = 75A
3 3.0
IC = 37.5A IC = 37.5A

2 2.0

1 1.0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0 0
6 8 10 12 14 16 0 25 50 75 100 125
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN

1.10 180

160
IC, DC COLLECTOR CURRENT(A)

140
VOLTAGE (NORMALIZED)

1.05
120

100
1.00
80
10-2005

60
0.95 40

20
Rev A

0.90 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
050-7458

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 APT75GP120JDQ3
30 350

td (OFF), TURN-OFF DELAY TIME (ns)

td(ON), TURN-ON DELAY TIME (ns)
300
VGE = 15V
250
20
VGE =15V,TJ=125°C
200

150
10 VGE =15V,TJ=25°C
100
VCE = 600V
TJ = 25°C, TJ =125°C 50 VCE = 600V
RG = 5Ω RG = 5Ω
L = 100 µH L = 100 µH
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
100 160
RG = 5Ω, L = 100µH, VCE = 600V RG = 5Ω, L = 100µH, VCE = 600V

140
TJ = 125°C, VGE = 15V
80
120

tf, FALL TIME (ns)

tr, RISE TIME (ns)

100
60

80

40 60

40
20 TJ = 25°C, VGE = 15V

TJ = 25 or 125°C,VGE = 15V 20

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
15000 V = 600V
12000
CE
V = 600V
CE
V = +15V V = +15V
EOFF, TURN OFF ENERGY LOSS (µJ)

GE GE
EON2, TURN ON ENERGY LOSS (µJ)

R = 5Ω R = 5Ω
G G
10000
TJ = 125°C,VGE =15V
TJ = 125°C, VGE = 15V
10000 8000

6000

5000 4000

2000
TJ = 25°C,VGE =15V TJ = 25°C, VGE = 15V

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
20000 15000
V = 600V V = 600V
CE CE Eon2,150A
SWITCHING ENERGY LOSSES (µJ)

V
GE
= +15V Eon2,150A V
GE
= +15V
SWITCHING ENERGY LOSSES (µJ)

T = 125°C R = 5Ω
J G
12500
Eoff,150A
15000
10000

10000 7500 Eoff,150A

Eon2,75A
Eon2,75A
10-2005

5000
5000 Eoff,75A
Eon2,37.5A
Eon2,37.5A Eoff,75A
2500
Rev A

Eoff,37.5A
Eoff,37.5A
0 0
0 10 20 30 40 50 25 50 075 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
050-7458

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES APT75GP120JDQ3
20,000 350

IC, COLLECTOR CURRENT (A)

1,000 Cies
300
500

250
C, CAPACITANCE ( F)
P

100
200
50 Coes
150

10 100
Cres

50

0 0
0 10 20 30 40 50 0 200 400 600 800 1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0.25

0.9
ZθJC, THERMAL IMPEDANCE (°C/W)

0.20

0.7
0.15
0.5
Note:
0.10
0.3

PDM
t1

t2
0.05
0.1 t
SINGLE PULSE Duty Factor D = 1/t2
0.05 Peak TJ = PDM x ZθJC + TC
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

50

RC MODEL
FMAX, OPERATING FREQUENCY (kHz)

Junction
temp (°C)

0.0221 0.0014
10 F = min (fmax, fmax2)
max
0.05
Power fmax1 =
0.0498 0.0416 5 td(on) + tr + td(off) + tf
(watts)

Pdiss - Pcond
T = 125°C fmax2 =
J Eon2 + Eoff
0.158 0.543 T = 75°C
C
D = 50 % TJ - TC
V
CE
= XXXV Pdiss =
Case temperature (°C) R = 5Ω RθJC
1 G
35 2050 60 80 95 110
IC, COLLECTOR CURRENT (A)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 20, Operating Frequency vs Collector Current
10-2005
Rev A
050-7458
 APT75GP120JDQ3

APT60DQ120 10% Gate Voltage

TJ = 125°C

td(on)

V CC IC V CE

tr

Collector Current
90% 5%
5%
A 10%

Collector Voltage
D.U.T. Switching Energy

Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions

VTEST
*DRIVER SAME TYPE AS D.U.T.
90%

Gate Voltage
TJ = 125°C
A
td(off) tf V CE
Collector Voltage
IC
90% 100uH
V CLAMP B

10%
A
0
DRIVER* D.U.T.
Collector Current
Switching Energy

Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit
10-2005
Rev A
050-7458
TYPICAL PERFORMANCE CURVES APT75GP120JDQ3

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions APT75GP120JDQ3 UNIT
IF(AV) Maximum Average Forward Current (TC = 105°C, Duty Cycle = 0.5) 60
IF(RMS) RMS Forward Current (Square wave, 50% duty) 88 Amps
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 540
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IF = 75A 2.8
VF Forward Voltage IF = 150A 3.48 Volts
IF = 75A, TJ = 125°C 2.17
DYNAMIC CHARACTERISTICS
Symbol Characteristic Test Conditions MIN TYP MAX- UNIT

trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C

F F R J
- 60
ns
trr Reverse Recovery Time - 265
IF = 60A, diF/dt = -200A/µs
Qrr Reverse Recovery Charge - 560 nC
VR = 800V, TC = 25°C
IRRM Maximum Reverse Recovery Current - 5 - Amps
trr Reverse Recovery Time - 350 ns
IF = 60A, diF/dt = -200A/µs
Qrr Reverse Recovery Charge - 2890 nC
VR = 800V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 13 - Amps
trr Reverse Recovery Time - 150 ns
IF = 60A, diF/dt = -1000A/µs
Qrr Reverse Recovery Charge - 4720 - nC
VR = 800V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 40 Amps

0.60
ZθJC, THERMAL IMPEDANCE (°C/W)

0.9
0.50

0.40 0.7

0.30 0.5
Note:
PDM

t1
0.20 0.3
t2

0.10 t
0.1 Duty Factor D = 1/t2
SINGLE PULSE Peak TJ = PDM x ZθJC + TC
0.05
0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

RC MODEL
Junction
temp. (°C)
10-2005

0.148 0.006

Power
Rev A

0.238 0.0910
(watts)

0.174 0.524
050-7458

Case temperature. (°C)

FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL

 APT75GP120JDQ3
200 400
T = 125°C
J
120A V = 800V
180 R
350

trr, REVERSE RECOVERY TIME

IF, FORWARD CURRENT 160
300
140 60A
TJ = 175°C
250
120

(ns)
30A
(A)

100 200
TJ = 125°C
80 150
60
TJ = 25°C 100
40
TJ = -55°C
50
20
0 0
0 1 2 3 4 0 200 400 600 800 1000 1200
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Forward Current vs. Forward Voltage Figure 27. Reverse Recovery Time vs. Current Rate of Change
7000 50

IRRM, REVERSE RECOVERY CURRENT

T = 125°C T = 125°C
J 120A
Qrr, REVERSE RECOVERY CHARGE

V = 800V J
R 45 V = 800V
R
6000
120A 40
5000 35

30
4000
(nC)

(A)
60A
25
3000 60A
20
30A 15
2000
30A
10
1000
5
0 0
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs) -diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Charge vs. Current Rate of Change Figure 29. Reverse Recovery Current vs. Current Rate of Change
1.2 100
Qrr Duty cycle = 0.5
trr T = 175°C
90 J

1.0
Kf, DYNAMIC PARAMETERS

80
(Normalized to 1000A/µs)

trr
70
0.8
IF(AV) (A)

60
IRRM
0.6 50

40
0.4
30
Qrr
20
0.2
10
0.0 0
0 25 50 75 100 125 150 75 100 25
125 150 50
175
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 30. Dynamic Parameters vs. Junction Temperature Figure 31. Maximum Average Forward Current vs. CaseTemperature
350

300
CJ, JUNCTION CAPACITANCE

250

200
(pF)

150
10-2005

100

50
Rev A

0
1 10 100 200
VR, REVERSE VOLTAGE (V)
050-7458

Figure 32. Junction Capacitance vs. Reverse Voltage

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3
Vr

+18V diF /dt Adjust

APT10035LLL

0V
D.U.T.
30µH trr/Qrr
Waveform

PEARSON 2878
CURRENT
TRANSFORMER

Figure 33. Diode Test Circui

t

1 IF - Forward Conduction Current

1 4
2 diF /dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3 IRRM - Maximum Reverse Recovery Current.
5 0.25 IRRM
4 trr - Reverse Recovery Time, measured from zero crossing where diode 3
current goes from positive to negative, to the point at which the straight 2
line through IRRM and 0.25 IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and trr.

Figure 34, Diode Reverse Recovery Waveform and Definitions

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)
31.5 (1.240) 12.2 (.480)
31.7 (1.248) 8.9 (.350)
7.8 (.307) W=4.1 (.161) 9.6 (.378)
8.2 (.322) W=4.3 (.169) Hex Nut M4
H=4.8 (.187) (4 places)
H=4.9 (.193)
(4 places)

25.2 (0.992)
r = 4.0 (.157)
(2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000)
4.2 (.165) 0.85 (.033) 12.8 (.504)
(2 places)

3.3 (.129) 1.95 (.077)

3.6 (.143) 2.14 (.084)
10-2005

14.9 (.587) * Emitter/Anode Collector/Cathode

15.1 (.594)
30.1 (1.185) * Emitter/Anode terminals are
30.3 (1.193) shorted internally. Current
handling capability is equal
Rev A

38.0 (1.496)
38.2 (1.504) for either Emitter/Anode terminal.

* Emitter/Anode Gate
Dimensions in Millimeters and (Inches)
050-7458

ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.