SOT223 NPN SILICON PLANAR

FZT653 HIGH PERFORMANCE TRANSISTOR FZT653

ISSUE 3– FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS * Low saturation voltage C

0.6
COMPLEMENTARY TYPE – FZT753
0.5 E
225
PARTMARKING DETAIL – FZT653 C
0.4
- (Volts)

IC/IB=10
175 B

- Gain
0.3 VCE=2V

0.2
125
ABSOLUTE MAXIMUM RATINGS.

h
PARAMETER SYMBOL VALUE UNIT
V

0.1 75

0 Collector-Base Voltage VCBO 120 V

0.0001 0.001 0.01 0.1 1 10 25
0.01 0.1 1 10
Collector-Emitter Voltage VCEO 100 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO 5 V
VCE(sat) v IC hFE v IC Peak Pulse Current ICM 6 A
Continuous Collector Current IC 2 A
Power Dissipation at Tamb =25°C Ptot 2 W
1.4

1.2
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
- (Volts)

1.2

1.0
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
- (Volts)

1.0 VCE=2V
IC/IB=10
Collector-Base V(BR)CBO 120 V IC=100µA
0.8
Breakdown Voltage
Collector-Emitter V(BR)CEO 100 V IC=10mA*
V

0.8
V

0.6
Breakdown Voltage
0.6
Emitter-Base Breakdown V(BR)EBO 5 V IE=100µA
0.0001 0.001 0.01 0.1 1 10
0.4
0.0001 0.001 0.01 0.1 1 10
Voltage
Collector Cut-Off Current ICBO 0.1 µA VCB=100V
IC - Collector Current (Amps) IC - Collector Current (Amps)
10 µA VCB=100V,Tamb=100°C
VBE(sat) v IC Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
VBE(on) v IC
Collector-Emitter VCE(sat) 0.13 0.3 V IC=1A, IB=100mA*
Saturation Voltage 0.23 0.5 V IC=2A, IB=200mA*
10 Single Pulse Test at T =25°C
amb
td

IB1=IB2=IC/10
Base-Emitter VBE(sat) 0.9 1.25 V IC=1A, IB=100mA*
Saturation Voltage
tr

tf ts

ns ns

280 2800 Base-Emitter VBE(on) 0.8 1.0 V IC=1A, VCE =2V*

1 240 2400
Turn-On Voltage
Static Forward Current hFE 70 200 IC=50mA, VCE =2V*
Switching time

200 2000
ts

160 1600
Transfer Ratio 100 200 300 IC=500mA, VCE =2V*
0.1
DC
1s
55 110 IC=1A, VCE =2V*
25 55 IC=2A, VCE =2V*
120 1200
tf
100ms
10ms 80 800

1ms
300µs 40 400
td

tr
Transition Frequency fT 140 175 MHz IC=100mA, VCE =5V
f=100MHz
0.01 0 0

0.1 1 10 100
0.01 0.1 1
Output Capacitance Cobo 30 pF VCB=10V, f=1MHz
Switching Times ton 80 ns IC=500mA, VCC =10V
VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) IB1=IB2=50mA
toff 1200 ns
Safe Operating Area Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device

3 - 210 3 - 209
 SOT223 NPN SILICON PLANAR
FZT653 HIGH PERFORMANCE TRANSISTOR FZT653
ISSUE 3– FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS * Low saturation voltage C

0.6
COMPLEMENTARY TYPE – FZT753
0.5 E
225
PARTMARKING DETAIL – FZT653 C
0.4
- (Volts)

IC/IB=10
175 B

- Gain
0.3 VCE=2V

0.2
125
ABSOLUTE MAXIMUM RATINGS.

h
PARAMETER SYMBOL VALUE UNIT
V

0.1 75

0 Collector-Base Voltage VCBO 120 V

0.0001 0.001 0.01 0.1 1 10 25
0.01 0.1 1 10
Collector-Emitter Voltage VCEO 100 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO 5 V
VCE(sat) v IC hFE v IC Peak Pulse Current ICM 6 A
Continuous Collector Current IC 2 A
Power Dissipation at Tamb =25°C Ptot 2 W
1.4

1.2
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
- (Volts)

1.2

1.0
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
- (Volts)

1.0 VCE=2V
IC/IB=10
Collector-Base V(BR)CBO 120 V IC=100µA
0.8
Breakdown Voltage
Collector-Emitter V(BR)CEO 100 V IC=10mA*
V

0.8
V

0.6
Breakdown Voltage
0.6
Emitter-Base Breakdown V(BR)EBO 5 V IE=100µA
0.0001 0.001 0.01 0.1 1 10
0.4
0.0001 0.001 0.01 0.1 1 10
Voltage
Collector Cut-Off Current ICBO 0.1 µA VCB=100V
IC - Collector Current (Amps) IC - Collector Current (Amps)
10 µA VCB=100V,Tamb=100°C
VBE(sat) v IC Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
VBE(on) v IC
Collector-Emitter VCE(sat) 0.13 0.3 V IC=1A, IB=100mA*
Saturation Voltage 0.23 0.5 V IC=2A, IB=200mA*
10 Single Pulse Test at T =25°C
amb
td

IB1=IB2=IC/10
Base-Emitter VBE(sat) 0.9 1.25 V IC=1A, IB=100mA*
Saturation Voltage
tr

tf ts

ns ns

280 2800 Base-Emitter VBE(on) 0.8 1.0 V IC=1A, VCE =2V*

1 240 2400
Turn-On Voltage
Static Forward Current hFE 70 200 IC=50mA, VCE =2V*
Switching time

200 2000
ts

160 1600
Transfer Ratio 100 200 300 IC=500mA, VCE =2V*
0.1
DC
1s
55 110 IC=1A, VCE =2V*
25 55 IC=2A, VCE =2V*
120 1200
tf
100ms
10ms 80 800

1ms
300µs 40 400
td

tr
Transition Frequency fT 140 175 MHz IC=100mA, VCE =5V
f=100MHz
0.01 0 0

0.1 1 10 100
0.01 0.1 1
Output Capacitance Cobo 30 pF VCB=10V, f=1MHz
Switching Times ton 80 ns IC=500mA, VCC =10V
VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) IB1=IB2=50mA
toff 1200 ns
Safe Operating Area Switching Speeds *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device

3 - 210 3 - 209