SOT223 PNP SILICON PLANAR

FZT758 HIGH VOLTAGE TRANSISTOR FZT758

ISSUE 2 – FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS * 400 Volt VCEO C
* 0.5 Amp continuous current
* Low saturation voltage
-55°C
1.6
IC/IB =10
IC/IB =20
Tamb=25°C
1.6
+25°C IC /IB =10
COMPLEMENTARY TYPE – FZT658 E
+100°C
IC/IB =50 +175°C
1.4 1.4 PARTMARKING DETAIL – FZT758 C
- (Volts)

- (Volts)
B
1.2 1.2

1.0

ABSOLUTE MAXIMUM RATINGS.

1.0

0.8 0.8

0.6 0.6 PARAMETER SYMBOL VALUE UNIT

V

V
Collector-Base Voltage VCBO -400 V
0.4 0.4

0.2 0.2
Collector-Emitter Voltage VCEO -400 V
0 0
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
Emitter-Base Voltage VEBO -5 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Peak Pulse Current ICM -1 A
VCE(sat) v IC VCE(sat) v IC Continuous Collector Current IC -500 mA
Power Dissipation at Tamb=25°C Ptot 2 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

1.6
+100°C
+25°C
VCE =10V
-55°C
+25°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.6 +100°C
-55°C +175°C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
300
1.4
- Normalised Gain

1.4
- (Volts)

Collector-Base Breakdown V(BR)CBO -400 V

- Typical Gain

1.2 1.2
IC=-100µ A
1.0 200 1.0 Voltage
Collector-Emitter VCEO(SUS) -400 V IC=-10mA*
0.8 0.8

0.6
100
0.6
Breakdown Voltage
V

0.4 0.4
Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µ A
h

0.2
Voltage
h

0.2

0
0
0.001 0.01 0.1 1 10 20
0.001 0.01 0.1 1 10 20 Collector Cut-Off Current ICBO -100 nA VCB=-320V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off Current ICES -100 nA VCE=-320V
hFE v IC VBE(sat) v IC Emitter Cut-Off Current IEBO -100 nA VEB=-4V
Collector-Emitter VCE(sat) -0.30 V IC=-20mA, IB=-1mA
Saturation Voltage -0.25 V IC=-50mA, IB=-5mA*
-55°C 1 -0.50 V IC=-100mA, IB=-10mA*
+25°C VCE =10V
1.6 +100°C
1.4
+175°C Base-Emitter Saturation VBE(sat) -0.9 V IC=-100mA, IB=-10mA*
Voltage
0.1
- (Volts)

1.2

1.0
Base-Emitter Turn On Voltage VBE(on) -1.0 V IC=-100mA, VCE=-5V*
0.8 DC
1s
Static Forward Current hFE 50 IC=-1mA, VCE=-5V
0.01
100ms
Transfer Ratio 50 IC=-100mA, VCE=-5V*
V

0.6
10ms
0.4
1ms
100µs 40 IC=-200mA, VCE=-10V*
0.2
Transition Frequency fT 50 MHz IC=-20mA, VCE=-20V
0 0.001 f=20MHz
0.001 0.01 0.1 1 10 20 1V 10V 100V 1000V
Output Capacitance Cobo 20 pF VCB=-20V, f=1MHz
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V)
Switching times ton 140 Typical ns IC=-100mA, VCC=-100V
VBE(on) v IC Safe Operating Area toff 2000 Typical ns IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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 SOT223 PNP SILICON PLANAR
FZT758 HIGH VOLTAGE TRANSISTOR FZT758
ISSUE 2 – FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS * 400 Volt VCEO C
* 0.5 Amp continuous current
* Low saturation voltage
-55°C
1.6
IC/IB =10
IC/IB =20
Tamb=25°C
1.6
+25°C IC /IB =10
COMPLEMENTARY TYPE – FZT658 E
+100°C
IC/IB =50 +175°C
1.4 1.4 PARTMARKING DETAIL – FZT758 C
- (Volts)

- (Volts)
B
1.2 1.2

1.0

ABSOLUTE MAXIMUM RATINGS.

1.0

0.8 0.8

0.6 0.6 PARAMETER SYMBOL VALUE UNIT

V

V
Collector-Base Voltage VCBO -400 V
0.4 0.4

0.2 0.2
Collector-Emitter Voltage VCEO -400 V
0 0
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
Emitter-Base Voltage VEBO -5 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Peak Pulse Current ICM -1 A
VCE(sat) v IC VCE(sat) v IC Continuous Collector Current IC -500 mA
Power Dissipation at Tamb=25°C Ptot 2 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

1.6
+100°C
+25°C
VCE =10V
-55°C
+25°C IC/IB =10 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.6 +100°C
-55°C +175°C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
300
1.4
- Normalised Gain

1.4
- (Volts)

Collector-Base Breakdown V(BR)CBO -400 V

- Typical Gain

1.2 1.2
IC=-100µ A
1.0 200 1.0 Voltage
Collector-Emitter VCEO(SUS) -400 V IC=-10mA*
0.8 0.8

0.6
100
0.6
Breakdown Voltage
V

0.4 0.4
Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µ A
h

0.2
Voltage
h

0.2

0
0
0.001 0.01 0.1 1 10 20
0.001 0.01 0.1 1 10 20 Collector Cut-Off Current ICBO -100 nA VCB=-320V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off Current ICES -100 nA VCE=-320V
hFE v IC VBE(sat) v IC Emitter Cut-Off Current IEBO -100 nA VEB=-4V
Collector-Emitter VCE(sat) -0.30 V IC=-20mA, IB=-1mA
Saturation Voltage -0.25 V IC=-50mA, IB=-5mA*
-55°C 1 -0.50 V IC=-100mA, IB=-10mA*
+25°C VCE =10V
1.6 +100°C
1.4
+175°C Base-Emitter Saturation VBE(sat) -0.9 V IC=-100mA, IB=-10mA*
Voltage
0.1
- (Volts)

1.2

1.0
Base-Emitter Turn On Voltage VBE(on) -1.0 V IC=-100mA, VCE=-5V*
0.8 DC
1s
Static Forward Current hFE 50 IC=-1mA, VCE=-5V
0.01
100ms
Transfer Ratio 50 IC=-100mA, VCE=-5V*
V

0.6
10ms
0.4
1ms
100µs 40 IC=-200mA, VCE=-10V*
0.2
Transition Frequency fT 50 MHz IC=-20mA, VCE=-20V
0 0.001 f=20MHz
0.001 0.01 0.1 1 10 20 1V 10V 100V 1000V
Output Capacitance Cobo 20 pF VCB=-20V, f=1MHz
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V)
Switching times ton 140 Typical ns IC=-100mA, VCC=-100V
VBE(on) v IC Safe Operating Area toff 2000 Typical ns IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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