SOT23 NPN SILICON PLANAR MEDIUM

FMMT614 POWER DARLINGTON TRANSISTOR FMMT614

ISSUE 3 – APRIL 1996
FEATURES
TYPICAL CHARACTERISTICS * hFE up to 5k at Ic= 500mA
2 2 * Fast switching E
+25°C IC/IB=1000 C
* Low VCE(sat) at High Ic

IC/IB=1000
IC/IB=2000
PARTMARKING DETAILS – 614 B
IC/IB=5000
1 1

-55°C
+25°C
+100°C
ABSOLUTE MAXIMUM RATINGS.
+150°C
PARAMETER SYMBOL VALUE UNIT
0 0
1m 10m 100m 1 10 1m 10m 100m 1 10 Collector-Base Voltage VCBO 120 V

IC - Collector Current (A) IC - Collector Current (A) Collector-Emitter Voltage VCEO 100 V
VCE(sat) v IC VCE(sat) v IC Emitter-Base Voltage VEBO 10 V

75k 2.4
Peak Pulse Current ICM 2 A
VCE=5V IC/IB=1000
Continuous Collector Current IC 500 mA
+100°C
+25°C Power Dissipation at Tamb=25°C Ptot 500 mW
50k -55°C

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

1.2
-55°C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
25k +25°C
+100°C
+150°C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base V(BR)CBO 120 300 V IC=10µA, IE=0
0 0 Breakdown Voltage
1m 10m 100m 1 10 1m 10m 100m 1 10 Collector-Emitter VCEO(sus) 100 130 V IC=10mA, IB=0*
Sustaining Voltage
IC - Collector Current (A) IC - Collector Current (A)
Emitter-Base V(BR)EBO 10 14 V IE=10µA, IC=0
hFE v IC VBE(sat) v IC Breakdown Voltage
2 10 Collector Cut-Off Current ICBO 0.02 10 nA VCB=100V, IE=0
VCE=5V
Collector Cut-Off Current ICES 10 µA VCES=100V, IE=0
1 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0
Collector-Emitter VCE(sat) 0.9 1.0 V IC=500mA, IB=5mA*
1 0.1 DC
1s
Saturation Voltage 0.78 0.9 V IC=100mA, IB=0.1mA
100ms
-55°C
10ms Base-Emitter Saturation VBE(sat) 1.7 1.9 V IC=500mA, IB=5mA*
+25°C
+100°C 0.01
1ms
100µs
Voltage
+150°C
Base-Emitter VBE(on) 1.5 1.8 V IC=500mA, VCE=5V*
Turn-On Voltage
0 0.001
1m 10m 100m 1 10 10m 100m 1 10 100 Static Forward Current hFE 15K IC=100mA, VCE=5V*
Transfer Ratio 5K IC=500mA, VCE=5V*
IC - Collector Current (A) VCE - Collector Emitter Voltage (V)
Output Capacitance Cobo 6 pF VCB=10V, f=100mHz
VBE(on) v IC Safe Operating Area
Switching Times ton 0.7 µs IC=100µA, IB=0.1mA
toff 2.5 VS=10V
µs
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.

PAGE NUMBER 3 - 147

 SOT23 NPN SILICON PLANAR MEDIUM
FMMT614 POWER DARLINGTON TRANSISTOR FMMT614
ISSUE 3 – APRIL 1996
FEATURES
TYPICAL CHARACTERISTICS * hFE up to 5k at Ic= 500mA
2 2 * Fast switching E
+25°C IC/IB=1000 C
* Low VCE(sat) at High Ic

IC/IB=1000
IC/IB=2000
PARTMARKING DETAILS – 614 B
IC/IB=5000
1 1

-55°C
+25°C
+100°C
ABSOLUTE MAXIMUM RATINGS.
+150°C
PARAMETER SYMBOL VALUE UNIT
0 0
1m 10m 100m 1 10 1m 10m 100m 1 10 Collector-Base Voltage VCBO 120 V

IC - Collector Current (A) IC - Collector Current (A) Collector-Emitter Voltage VCEO 100 V
VCE(sat) v IC VCE(sat) v IC Emitter-Base Voltage VEBO 10 V

75k 2.4
Peak Pulse Current ICM 2 A
VCE=5V IC/IB=1000
Continuous Collector Current IC 500 mA
+100°C
+25°C Power Dissipation at Tamb=25°C Ptot 500 mW
50k -55°C

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

1.2
-55°C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
25k +25°C
+100°C
+150°C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base V(BR)CBO 120 300 V IC=10µA, IE=0
0 0 Breakdown Voltage
1m 10m 100m 1 10 1m 10m 100m 1 10 Collector-Emitter VCEO(sus) 100 130 V IC=10mA, IB=0*
Sustaining Voltage
IC - Collector Current (A) IC - Collector Current (A)
Emitter-Base V(BR)EBO 10 14 V IE=10µA, IC=0
hFE v IC VBE(sat) v IC Breakdown Voltage
2 10 Collector Cut-Off Current ICBO 0.02 10 nA VCB=100V, IE=0
VCE=5V
Collector Cut-Off Current ICES 10 µA VCES=100V, IE=0
1 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0
Collector-Emitter VCE(sat) 0.9 1.0 V IC=500mA, IB=5mA*
1 0.1 DC
1s
Saturation Voltage 0.78 0.9 V IC=100mA, IB=0.1mA
100ms
-55°C
10ms Base-Emitter Saturation VBE(sat) 1.7 1.9 V IC=500mA, IB=5mA*
+25°C
+100°C 0.01
1ms
100µs
Voltage
+150°C
Base-Emitter VBE(on) 1.5 1.8 V IC=500mA, VCE=5V*
Turn-On Voltage
0 0.001
1m 10m 100m 1 10 10m 100m 1 10 100 Static Forward Current hFE 15K IC=100mA, VCE=5V*
Transfer Ratio 5K IC=500mA, VCE=5V*
IC - Collector Current (A) VCE - Collector Emitter Voltage (V)
Output Capacitance Cobo 6 pF VCB=10V, f=100mHz
VBE(on) v IC Safe Operating Area
Switching Times ton 0.7 µs IC=100µA, IB=0.1mA
toff 2.5 VS=10V
µs
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.

PAGE NUMBER 3 - 147