KSA614

KSA614

Low Frequency Power Amplifier

Power Regulator
• Collector-Base Voltage : VCBO= -80V
• Collector Dissipation : PC=25W (TC=25°C)

1 TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector- Base Voltage - 80 V
VCEO Collector- Emitter Voltage - 55 V
VEBO Emitter- Base Voltage -5 V
IC Collector Current -3 A
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = - 500µA, IE = 0 - 80 V
BVCEO Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 55 V
BVEBO Emitter-Base Breakdown Voltage IE = - 500µA, IC = 0 -5 V
ICBO Collector Cut-off Current VCB = - 50V, IE = 0 - 50 µA
hFE DC Current Gain VCE = - 5V, IC = - 0.5A 40 240
VCE(sat) Collector-Emitter Saturation Voltage IC = - 1A, IB = - 0.1A - 0.15 - 0.5 V

hFE Classification
Classification R O Y
hFE 40 ~ 80 70 ~ 140 120 ~ 240

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSA614
Typical Characteristics

-2.0 1000
IB = -10mA
-1.8 IB = -9mA
VCE = -5V
Ic[A], COLLECTOR CURRENT

-1.6 IB = -8mA

hFE, DC CURRENT GAIN

-1.4
IB = -7mA
IB = -6mA
-1.2
IB = -5mA
-1.0 100
IB = -4mA
-0.8
IB = -3mA
-0.6
IB = -2mA
-0.4

-0.2 IB = -1mA

10
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -0.01 -0.1 -1 -10

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10 1000

Ic = 10 IB f = 1MHz
IE=0
COB[pF], CAPACITANCE

-1
VBE(sat)

100

-0.1

V CE(sat)

-0.01 10
-0.1 -1 -1 -10 -100

IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Collector-Emitter Saturation Voltage

-10 40

o *1ms 35
1.Tc=25 C
Thermal limitation
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

2.*Single Pulse 30

Thermal limitation 25
S/B limitation
DC
-1 20

15

S/B limitation
10

-0.1 0
-1 -10 -100 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 KSA614
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

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result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E