JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L
MJE2955 TRANSISTOR (PNP)

1. BASE
FEATURES
2. COLLECTOTR
3. EMITTER
General Purpose and Switching Applications

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage -70 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -10 A
PC Collector Power Dissipation 2 W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature Range -55-150 ℃

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC=-10mA, IE=0 -70 V

Collector-emitter breakdown voltage V(BR)CEO IC=-200mA, IB=0 -60 V

Emitter-base breakdown voltage V(BR)EBO IE=-10mA, IC=0 -5 V

Collector cut-off current ICBO VCB=-70V, IE=0 -1 mA

Emitter cut-off current IEBO VEB=-5V, IC=0 -5 mA

hFE(1) * VCE=-4V, IC=-4A 20 100

DC current gain
hFE(2) * VCE=-4V, IC=-10A 5

VCE(sat) * IC=-4A, IB=-0.4A -1.1 V

Collector-emitter saturation voltage
VCE(sat) * IC=-10A, IB=-3.3A -8 V

Base-emitter voltage VBE* VCE=-4V, IC=-4A -1.8 V

Transition frequency fT VCE=-10V, IC=-0.5A 2 MHz

Note:*Pulse test: tp≤300μS, δ≤0.02.

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Typical Characteristics

Typical Characterisitics MJE2955

Static Characteristic hFE —— IC
-6 1000
-100mA
COMMON
EMITTER -90mA
-5 Ta=25℃
-80mA
COLLECTOR CURRENT IC (A)

DC CURRENT GAIN hFE

-70mA
-4
-60mA
Ta=100℃
-50mA
-3 100
-40mA
Ta=25℃
-2 -30mA

-20mA
-1

IB=-10mA COMMON EMITTER

VCE=-4V
-0 10
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -1 -10 -100 -1000 -10000

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
-1000 -1400

-1300

-1200
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION -1100

VOLTAGE VBEsat (mV)
VOLTAGE VCEsat (mV)

-1000 Ta=25℃
Ta=100℃
-900

-100 -800

-700
Ta=25℃
-600
Ta=100℃
-500

-400

-300
β=10 β=10
-10 -200
-10 -100 -1000 -10000 -1 -10 -100 -1000 -10000

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob/ Cib —— VCB/ VEB

-10000 10000
COMMON EMITTER f=1MHz
VCE=-4V IE=0/IC=0
Ta=25℃
-1000
COLLCETOR CURRENT IC (mA)

CAPACITANCE C (pF)

Cib
1000
0℃

-100
a 10

℃
T=

a 25
T=

Cob
-10
100

-1

-0.1 10
-200 -400 -600 -800 -1000 -1200 -0.1 -1 -10 -30

BASE-EMMITER VOLTAGE VBE (mV) REVERSE VOLTAGE V (V)

PC —— Ta
2500
COLLECTOR POWER DISSIPATION

2000
PC (mW)

1500

1000

500

0
0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta (℃ )

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 TO-220-3L Package Outline Dimensions

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 4.470 4.670 0.176 0.184
A1 2.520 2.820 0.099 0.111
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
E1 12.060 12.460 0.475 0.491
e 2.540 TYP 0.100 TYP
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155

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