JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

JC(T TO-92S Plastic-Encapsulate Transistors

2SA933AS TRANSISTOR (PNP) TO-92S

1. EMITTER

FEATURES 2. COLLECTOR
·Excellent hFE Linearity
3. BASE


Equivalent Circuit


A933AS A933AS 'HYLFHFRGH
Solid dot = Green molding compound device,
z if none, the normal device
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ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity

2SA933AS TO-92S Bulk 1000pcs/Bag

2SA933AS-TA TO-92S Tape 3000pcs/Box

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -150 mA
PC Collector Power dissipation 300 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

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Ta =25 Я unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -60 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V

Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 μA

Emitter cut-off current IEBO VEB= -6V, IC=0 -0.1 μA

DC current gain hFE VCE=-6 V, IC= -1mA 120 560

Collector-emitter saturation voltage VCEsat IC= -50mA, IB=-5mA -0.5 V

VCE=-12V, IC=-2mA
Transition frequency fT 140 MHz
f=30MHz

Collector output capacitance Cob VCB=-12V, IC=0, f=1MHz 4 5 pF

CLASSIFICATION OF hFE
Rank Q R S

Range 120-270 180-390 270-560

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 Typical Characteristics
Static Characteristic hFE —— IC
-8 1000
-30uA COMMON
EMITTER
-27uA
(mA)

Ta=25℃
Ta=100℃
-24uA

hFE
-6
IC

-21uA Ta=25℃

DC CURRENT GAIN
COLLECTOR CURRENT

-18uA

-4 -15uA 100

-12uA

-9uA
-2
-6uA

IB=-3uA COMMON EMITTER

VCE=-6V
-0 10
-0 -2 -4 -6 -8 -10 -0.1 -1 -10 -100 -150
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VBEsat —— IC VCEsat —— IC
-3000 -1000

COLLECTOR-EMITTER SATURATION
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (mV)

VOLTAGE VCEsat (mV)

-1000
Ta=25℃

-100
Ta=100℃
Ta=100℃

Ta=25℃

β=10 β=10
-100 -10
-0.1 -1 -10 -100 -150 -0.1 -1 -10 -100 -150
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE fT —— IC
-150 1000
-100
(MHz)
(mA)
IC

fT

100
COLLECTOR CURRENT

-10
TRANSITION FREQUENCY
00℃

5℃
T =2
T =1

a
a

10
-1

COMMON EMITTER VCE= -12V

VCE=-6V Ta=25℃
-0.1 1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.5 -1 -10 -100
BASE-EMMITER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA)

Cob/ Cib —— VCB/ VEB PC —— Ta

100 400
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION

Ta=25℃
300
(pF)

10 Cib
PC (mW)
C
CAPACITANCE

Cob 200

100

0.1 0
-0.1 -1 -10 -20 0 25 50 75 100 125 150
REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta (℃ )

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A,Jun,2014
 Dimensions In Millimeters Dimensions In Inches
Symbol
Min. Max. Min. Max.
A 1.420 1.620 0.056 0.064
A1 0.660 0.860 0.026 0.034
b 0.330 0.480 0.013 0.019
b1 0.400 0.510 0.016 0.020
c 0.330 0.510 0.013 0.020
D 3.900 4.100 0.154 0.161
D1 2.280 2.680 0.090 0.106
E 3.050 3.250 0.120 0.128
e 1.270 TYP. 0.050 TYP.
e1 2.440 2.640 0.096 0.104
L 15.100 15.500 0.594 0.610
θ 45° TYP. 45° TYP.

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