SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation

March 2008

SS8550
2W Output Amplifier of Portable Radios in Class B Push-pull Operation
Features
Complimentary to SS8050
Collector Current: IC=1.5A
Collector Power Dissipation: PC=1W (TC=25C)

1 TO-92

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings Ta=25C unless otherwise noted

Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -1.5 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 C
TSTG Storage Temperature -65 ~ 150 C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V
BVEBO Emitter-Base Breakdown Voltage IE= -100A, IC=0 -6 V
ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100 nA
hFE1 DC Current Gain VCE= -1V, IC= -5mA 45 170
hFE2 VCE= -1V, IC= -100mA 85 160 300
hFE3 VCE= -1V, IC= -800mA 40 80
VCE (sat) Collector-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.28 -0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.98 -1.2 V
VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 V
Cob Output Capacitance VCB= -10V, IE=0 15 pF
f=1MHz
fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 100 200 MHz

hFEClassification
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

SS8550 Rev. 1.0.0 1
 SS8550 Features
Typical Performance Characteristics

-0.5 1000
VCE = -1V
IB=-4.0mA
IC[mA], COLLECTOR CURRENT

-0.4 IB=-3.5mA

hFE, DC CURRENT GAIN

IB=-3.0mA 100
-0.3 IB=-2.5mA

IB=-2.0mA
-0.2 IB=-1.5mA
10
IB=-1.0mA
-0.1

IB=-0.5mA

1
-0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

-10000 -100
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC=10IB IC[mA], COLLECTOR CURRENT VCE = -1V

-1000 -10

VBE(sat)

-100 -1

VCE(sat)

-10 -0.1
-0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

100 1000
f=1MHz VCE=-10V
IE=0
Cob[pF], CAPACITANCE

10 100

1 10
-1 -10 -100 -1000 -1 -10 -100 -1000

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

SS8550 Rev. 1.0.0 2
 SS8550 Features

2007 Fairchild Semiconductor Corporation www.fairchildsemi.com

SS8550 Rev. 1.0.0 3