BC327A PNP Epitaxial Silicon Transistor

BC327A
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages

1 TO-92
1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings * T a = 25°C unless otherwise noted

Symbol Parameter Value Units

VCES Collector-Emitter Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -800 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -60 V
BVCES Collector-Emitter Breakdown Voltage IC= -100µA, VBE=0 -60 V
BVEBO Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V
ICES Collector Cut-off Current VCE= -45V, VBE=0 -100 nA
hFE1 DC Current Gain VCE= -1V, IC= -100mA 100 400
hFE2 VCE= -1V, IC= -500mA 40
VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 100 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

BC327A Rev. A
 BC327A PNP Epitaxial Silicon Transistor
Typical Performance Characteristics

Figure 1. Static Characterstic Figure 2. Static Characteristic

-500 -20
µA
- 80
IB=
- 70
µA
mA IB=
IC[mA], COLLECTOR CURRENT

- 5.0 A

IC[mA], COLLECTOR CURRENT

-400 I B = - 4.5m -16
µA
- 60
P
T =6
IB = 0m A IB= 00
- 4. A mW
I B = - 3.5m A µA
IB =
- 3.0
m - 50
I B = - 2 .5 m
A IB=
-300 IB = A
- 2 .0 m -12
- 40
µA
IB = IB=
A
1.5m
IB = -
30µA
-200 -8 IB = -
IB = - 1.0mA PT = 60
0mW
0µA
IB = - 2
IB = - 0.5mA
-100
-4

IB = - 10µA
IB = 0
-0 IB = 0
-1 -2 -3 -4 -5
-10 -20 -30 -40 -50

VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 -10
PULSE
IC = 10 IB
PULSE
VCE = - 2.0V
hFE, DC CURRENT GAIN

VCE(sat)
100 -1

- 1.0V

10 -0.1

VBE(sat)

1 -0.01
-0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product

-1000 1000

VCE = -5.0V
fT[MHz], GAIN-BANDWIDTH PRODUCT

VCE = -1V
IC[mA], COLLECTOR CURRENT

PULSE
-100

-10 100

-1

-0.1 10
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100

VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

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BC327A Rev. A
 BC327A PNP Epitaxial Silicon Transistor
Mechanical Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20
0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

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BC327A Rev. A
 BC327A PNP Epitaxial Silicon Transistor
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in accordance with instructions for use provided in the labeling,
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I16

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BC327A Rev. A