LM2302

SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)

N-Channel Enhancement-Mode MOS FETs

N 沟道增强型 MOS 场效应管

■MAXIMUM RATINGS 最大額定值

Characteristic 特性參數 Symbol 符號 Max 最大值 Unit 單位

Drain-Source Voltage
BVDSS 20 V
漏極-源極電壓
Gate- Source Voltage
VGS +10 V
栅極-源極電壓
Drain Current (continuous)
ID 3.5 A
漏極電流-連續
Drain Current (pulsed)
I DM 11 A
漏極電流-脉冲
Total Device Dissipation
總耗散功率 PD 1000 mW
T A =25℃環境溫度爲 25℃

Junction 結溫 TJ 150 ℃

Storage Temperature 儲存溫度 T stg -55to+150 ℃

Rev : 01.06.2015 1/3 www.leiditech.com

 LM2302

■ELECTRICAL CHARACTERISTICS 電特性

(TA =25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic Symbol Min Typ Max Unit

特性參數 符號 最小值 典型值 最大值 單位

Drain-Source Breakdown Volta ge

BVDSS 20 — — V
漏極-源極擊穿電壓(I D = 250uA,VGS =0V)

Gate Threshold Voltage

VGS(th) 0.5 — 1.5 V
栅極開启電壓(I D = 250uA,VGS = VDS )

Diode Forward Voltage Drop

VSD — — 1.5 V
内附二極管正向壓降(I S= 0.75A,VGS=0V)

Zero Gate Voltage Drain Current

零栅壓漏極電流(V GS=0V, VDS = 16V) IDSS — — 1 uA
(V GS=0V, VDS = 16V, T A =55℃) 10

Gate Body Leakage

IGSS — — +100 nA
栅極漏電流(V GS=+10V, VDS =0V)

Static Drain-Source On-State Resistance

静态漏源導通電阻(I D=2.8A,VGS =4.5V) R DS( ON) — — 60 mΩ
(I D=2A,VGS =2.5V) 80

Input Capacitance 輸入電容

CISS — — 800 pF
(V GS=0V, VDS = 10V,f=1MHz)

Common Source Output Capacitance

COSS — — 200 pF
共源輸出電容(V GS=0V, VDS= 10V,f=1MHz)

Turn-ON Time 开启時間

t (on) — — 20 ns
(V DS= 10V, ID = 3.5A, R GEN=10Ω)

Turn-OFF Time 关断時間

t(off) — — 80 ns
(V DS= 10V, ID = 3.5A, R GEN=10Ω)

Pulse Width<300μs; Duty Cycle <2.0%

Rev : 01.06.2015 2/3 www.leiditech.com

 LM2302

■DIMENSION 外形封裝尺寸

單位(UNIT)：mm

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059

Rev : 01.06.2015 3/3 www.leiditech.com