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AN5165K
A Single Chip IC for NTSC Color-TV
■ Overview Unit: mm
The AN5165K is an IC in which all of the NTSC
0.5±0.1
1.0±0.25
1 52
system color television signal processing circuits are in-
tegrated on a single chip. The rationalization of set pro-
ue e/
duction line can be realized by this IC incorporating I2C
1.778
bus interface.
47.7±0.3
tin nc
■ Features
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• Built-in video IF circuit, sound IF circuit, video signal
sta
processing circuit, color signal processing circuit, de-
flection correction circuit and sync. signal processing
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26 27
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circuit
cy
13.7±0.3 (0.7)
• Built-in I2C bus interface
life
3.85±0.3 (3.3)
+0.2
ct
0.25 -0.05
■ Applications
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3° to 15° (15.24)
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• TVs SDIP052-P-0600A
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datasheet.
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V Out1
CW Out
H Out
X-ray
HOSC
AFC1
6.3 V
FBP In
VCJ GND
C In
V/C/J/5 V
H Sync.
V Clamp
V Sync. Y In
BLDET
IF 9 V
VCO2
VCO1
APC
DET Out
Int.V
AFT Out
Video Out
IF AGC
SIF In
Ext.Audio
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■ Block Diagram
to Video
S.SW Hor. DC
CV Clamp
int
HVCO HBLK Sync. Sep.
SW HBLK
en
DAC 4-bit
Ver. Out X-ray VAMP VSW
an
SIF
H.EQP VCO
ce
SW
Di ain
32fH AFC1 Lock DET /D Ver.
Sync. Sep. VCO V SW
Hosc1
Ver. 2fH DL Trap CTRL VA
H Pluse PT
isc
CountDown SW
Hor. Hosc2 RAMP
on
H Out1
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CountDown AFC2
VBLK H Out2
tin
CCP (Hosc4) B.G.P
ue
Trig1 SW
to Video Trig2 APC NI IF
RGB 3-bit L.P.F. AGC PLL
di
A Trig
p
P.EQP H Center DAC
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Sharpness
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to Chroma Y.N.R
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DAC 5-bit
e
SW DAC
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ACC1 On/Off SW7-bit 6-bit AFT DEMP
ACC DET
pla m d m des
B.P.F.1
Killer Off SW SW DAC DAC
Y Contrast
SDB00001BEB
BPF SW 9-bit 5-bit
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SW ACC2 IF
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SW DET
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Killer B.P.F.2 DAC
ABL SW
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L.P.F. VOL
tin nc
CW Out Contrast Y Clamp
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Bright
DAC
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Color DAC 8-bit
DC DAC 7-bit
7-bit Black
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VIF RF ASW
Tint Expamsion Amp. AGC
DEM C Filter
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DAC
APC 8-bit 7-bit
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7-bit
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Cut Off Drive RGB Limit γ
Gain Control 3-bit
ct
DAC DAC
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d SW γ On/Off SW
Cut off DAC
an ut e life
VCO YS&YM as lat
Cut Off B SW
SW
cy
d Drive
Cut Off R SW
on es
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R
B
G
ic. t in
9V
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R In
B In
G In
SCL
APC
APC
SDA
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18 IF 5 V
YS&YM
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GND (IF)
V/C/J 9 V
Ext.Video
.
Lock DET
Audio Out
Decoupling
ACL/NECK
GND (RGB)
RF AGC Out
Chroma VCO
/en at
BLK In (SCP)
/ i on.
AN5165K
■ Pin Description
Pin No. Description Pin No. Description
1 Chroma VCO (3.58 MHz) 28 SIF Input/White Expand-Level
2 Chroma APC Filter 29 IF AGC Filter
3 YS & YM Input 30 Video Output
4 External R Input 31 AFT Output
5 External G Input 32 Internal Video Input
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6 External B Input 33 VIF Detect Output
7 VCC1-1 9 V (VCJ) 34 VIF APC Filter
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8 R Output 35 VIF VCO (1)
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9 G Output 36 VIF VCO (2)
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10 B Output 37 VCC1-2 9 V
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11 Hor. Lock Detect 38 Black Detect
cy
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12 GND (RGB/I2C/ DAC) 39 Y/Ver. Sync. Input
ct
13 ACL/NECK Protect 40 Ver. Sync. Clamp
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14 SDA 41 Hor. Sync. Input
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19 VIF Input (1) 46 VCC3 6.2 V
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21 GND (VIF/SIF) 48 Hor. VCO (32 fH)
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SDB00001BEB 3
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■ Recommended Operating Range
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Parameter Symbol Range Unit
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Supply voltage VCC1 8.1 to 9.9 V
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VCC2 4.5 to 5.5
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VCC3 6.05 to 6.35
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cy
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■ Electrical Characteristics at Ta = 25°C
ct
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Parameter Symbol Conditions Min Typ Max Unit
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V37 = 9 V
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Supply current 2 I18+I42 Current at V18 = 5 V, current at 38 48 57 mA
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V42 = 5 V
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Video detection output (typ.) VPO Modulation factor m = 87.5% 1.75 2.1 2.5 V[p-p]
isc
Data 0D = 88
/D
Video detection output (max.) VPOmax Data 0D = F8 2.15 2.6 3.3 V[p-p]
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Video detection output (min.) VPOmin Data 0D = 08 1.1 1.6 2.0 V[p-p]
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Video detection output f characteristics fPC Frequency of output −3 dB for 1 MHz 5.5 8 12 MHz
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Synchronous peak value voltage VSP Voltage in VPO measurement 1.6 2.0 2.4 V
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APC pull-in range (Hu) fPPHU High band side pull-in range 1.0 1.5 MHz
Pl
4 SDB00001BEB
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AFT maximum output voltage VAFTmax V31 at f = fP−500 kHz 7.8 8.1 8.7 V
AFT minimum output voltage VAFTmin V31 at f = fP+500 kHz 0.3 0.8 1.0 V
tin nc
SIF circuit (Typical input fS = 4.5 MHz, fM = 400 Hz, VIN = 90 dBµ)
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Audio detection output VSO Df = ±25 kHz, 0A = 10 250 350 450 mV[rms]
sta
Audio detection output (max.) VSOmax Data 0A = 1F 300 390 480 mV[rms]
cle
on na
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Audio detection output (min.) VSOmin Data 0A = 00 150 256 350 mV[rms]
life
SIF pull-in range fSP 3.3 5.7 MHz
ct
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AV SW circuit
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f = 400 Hz, VIN = 1 V[p-p]
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Video signal processing circuit (In the following test conditions, the measurements are made withinput: 2.0 V[p-p]
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Video output (typ.) VYO Data 03 = 40 (typ.) (Contrast) 1.9 2.4 2.9 V[0-p]
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Video output (max.) VYOmax Data 03 = 7 F (max.) 3.8 4.8 5.8 V[0-p]
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Video output (min.) VYOmin Data 03 = 00 (min.) 0.07 0.3 0.6 V[0-p]
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03 = 00
/D
Video frequency characteristics fYC Data 0F−D7 = 0 (Trap Off) 6.0 8.0 10.0 MHz
ce
Data 04 = 00 (Sharpness)
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f = 0.5 MHz
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04 = 00 Data 0F − D7 = 0
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Pedestal level (typical) VPED Data 02 = 80 (typ.) (Brightness) 2.4 3.0 3.6 V
Pedestal variable width ∆VPED Difference between Data 02 = 00 2.2 2.6 3.0 V
and FF
Brightness control sensitivity ∆VBRT Average amount of change per 1 step, 9.5 12.5 15.5 mV/Step
when Data 02 = 60 and A0
ACL sensitivity ACL Change of YOUT from V13 = 3.0 V to 3.5 V 2.3 2.9 3.6 V/V
Blanking level VYBL DC voltage of blanking pulse 0.9 1.4 1.9 V
SDB00001BEB 5
AN5165K
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is being decreased from 5 V.
Color signal processing circuit (In the following test conditions, burst = 300 mV[p-p], reference is BOUT)
Color difference output (typ.) VCO Input: Color bar 2.8 3.5 4.2 V[p-p]
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Data 00 = 7 F one side amplitude
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Color difference output (max.) VCOmax 2.3 3.4 V[0-p]
Data 03 = 40
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Data 00 = 00, Data 03 = 40
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Color difference output (min.) VCOmin 0 100 mV[p-p]
life
Contrast variable range CCmax/min 03 = FF Data 00 = 40 15 20 25 dB
ct
03 = 00
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ACC characteristics 1 ACC1 Burst 300 mV[p-p]→600 mV[p-p] 0.8 1.0 1.2 Time
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∆θC Difference (Tint) between Data 01 = 40 −13
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and that of tint adjusted at center
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Demodulation output ratio (R) R/B Input: Rainbow 0.81 0.95 1.09 Time
ue
tin
Demodulation output ratio (G) G/B Input: Rainbow 0.3 0.36 0.42 Time
p
on
Demodulation output angle (G) ∠G Input: Rainbow 223 235 237 deg
ce
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Pedestal difference voltage ∆VIPL Difference voltage of RGB out pedestal − 0.3 0.3 V
ea
Pl
Brightness voltage tracking ∆TBL Ratio of R, G, B out fluctuation level 0.9 1.0 1.1 Time
for Data 02 (Bright) 02 = 40 to C0
Video voltage gain relative ratio ∆GYC Output ratio of R, B out to GOUT 0.8 1.0 1.2 Time
Video voltage gain tracking ∆TCONT Gain ratio of R, G, B out for Data 0.9 1.0 1.1 Time/
03 (Contrast) 03 = 20 to 60 Time
Drive adjustment range GDV AC change amount of R, B out between 5.9 7.1 8.3 dB
drive adjustment max. and min.
6 SDB00001BEB
AN5165K
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YM threshold voltage VYM Minimum DC voltage at which YM 0.7 1.0 1.3 V
turns on
YM operating voltage gain ∆GYM YM on/off gain difference −12 −9 −6 dB
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External RGB pedestal voltage VEPL YS is on 2.1 2.7 3.3 V
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External RGB pedestal difference ∆VEPL YS is on, R−G, G−B −250 250 mV
cle
voltage
on na
cy
Internal/external pedestal difference ∆VPL/IE Internal−external −100 200 500 mV
life
voltage
ct
Input 3 V[p-p], contrast 03 =7 F
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External RGB output voltage VERGB 1.2 1.7 2.2 V[0-p]
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External RGB output difference ∆VERGB Input 3 V[p-p], contrast 03 = 7F − 0.6 0 0.6 V
voltage
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03 = 00
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External RGB frequency characteristics fRGBC 8 12 MHz
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Horizontal free-running oscillation fHO Without sync. signal input 15.4 15.75 16 kHz
M
as lat
frequency
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frequency
isc
/D
Picture center variable range ∆THC Change amount of phase difference 5.9 7.3 9.1 µs
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0E: 00 to 1F
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I2C interface
se
ea
SDB00001BEB 7
AN5165K
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Differential gain DGP 0 3 5 %
Differential phase DPP 0 3 5 deg
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Black noise detection level ∆VBN Difference from sync. peak value −55 −45 −35 IRE
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Black noise clamp level ∆VBNC Difference from sync. peak value 35 45 55 IRE
sta
RF AGC operation sensitivity GRF Input level difference to become 0.5 1.5 3.0 dB
cle
V22 = 1 V→7 V
on na
cy
∆fPD
life
VCO switch on drift Frequency drift from 5 seconds 70 kHz
after SW On to 5 mins. after
ct
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Intermodulation IM VFC−VFP = −2 dB, VFS−VFP = −12 dB 46 52 dB
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AFT offset adjustment sensitivity SAFT Average amount of change of output 0.15 0.2 0.25 V/Step
Di ain
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voltage V31 for Data 1Step
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Video detection output fluctuation ∆VP/V VCC = ±10% ±10 ±15 %
co fo
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co L a d t ty
pla m d m des
with VCC
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characteristics
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Sound IF output level VSIF fS = 45.75 MHz−4.50 MHz, 94 100 106 dBm
/D
P/S = 20 dB
ce
VCO control sensitivity 1 βPU DV34 = 2.0 V−3.8 V, f = 45.75 MHz 1.3 2.2 3.1 kHz/mV
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VCO control sensitivity 2 βPJ DV34 = 2.0 V−3.8 V, f = 58.75 MHz 1.3 2.2 3.1 kHz/mV
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-temperature characteristics
ea
-temperature characteristics
AFT center frequency ∆fAFT/T Ta = −20°C to +70°C 300 kHz
-temperature characteristics Input frequency at which AFT output
voltage becomes 4.5 V
VCO free-run adjustment VAFTADJ AFT center voltage adjustment 4.5 V
VCO free-running frequency 1 ∆fP1 Dispersion without VIN. −300 0 300 kHz
V29 (IF AGC) = 0 V (Difference
from 45.75 MHz is measured)
8 SDB00001BEB
AN5165K
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from 58.75 MHz is measured)
APC pull-in range (Hj) fPPHJ High band side pull-in range 1.0 1.5 MHz
(Difference from fP = 58.75 MHz)
tin nc
APC pull-in range (Lj) fPPLJ Low band side pull-in range −1.5 −1.0 MHz
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(Difference from fP = 58.75 MHz)
sta
Detection output resistance RO33 DC measurement 70 120 170 Ω
cle
on na
SIF circuit (Typical input fS = 4.5 MHz, fM = 400 Hz, VIN = 90 dBµ)
cy
life
Input limiting level VLIM Input level to become VSOP = −3 dB 44 50 dBµ
ct
AM rejection ratio AMR AM = 30% 60 70 dB
du
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Df = ±50 kHz
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Di ain
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∆f = ±25 kHz
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∆VS/V VCC = ±10% ±3 ±6
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characteristics 1
ue
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characteristics 2
isc
AV SW circuit
/D
ce
Inside→Outside, Outside→Inside
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int
voltage
se
ea
voltage
Video SW internal output DC voltage V30I DC measurement Data 04−D6 = 0 3.4 4.2 5.0 V
Video SW external output DC voltage V30E DC measurement Data 0F−D5 = 1 3.4 4.2 5.0 V
Video SW input resistance RI25, 32 DC measurement 524 Ω
Video SW output resistance RO30 DC measurement 20 50 100 Ω
SDB00001BEB 9
AN5165K
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Audio SW crosstalk CTAEI fS = 4.5 MHz, fM = 0 Hz, External −73 −67 dB
(External→Internal) f = 400 Hz, VIN = 600 mV[rms]
Audio SW input terminal voltage V27 DC measurement 3.7 4.2 4.7 V
tin nc
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Audio SW internal output DC voltage V24I DC measurement 3.7 4.2 4.7 V
.
ge
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Audio SW external output DC voltage V24E DC measurement 3.7 4.2 4.7 V
∆V24 −300
cle
Audio SW internal/external DC DC measurement 0 300 mV
on na
cy
difference voltage
life
Audio SW input resistance RI27 DC measurement 61 72 83 kΩ
ct
Ω
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Audio SW output resistance RO24 DC measurement 200 400 600
mi UR ue ued pe pe Pro
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Video signal processing circuit (In the following test conditions, the measurements are made with input 2.0 V[p-p]
(VWB = 1.43 V[0-p]) GOUT)
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Y signal delay time 1 TDL1 Phase difference from Y-input 620 690 760 ns
n.
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Di ain
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(For both trap on/off)
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(Trap through)
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Black level extension 2 VBL2 Input: Total black, pin 38 GND and 700 900 1 300 mV
ue
Black level extension 3 VBL3 Voltage difference between pin 38 400 600 800 mV
isc
V43 = 2.5 V
ce
an
Contrast variation with sharpness DVCS YOUT output level difference between −300 0 300 mV
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Contrast variation with sharpness DVBS Pedestal level DC difference between −250 0 250 mV
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10 SDB00001BEB
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Video output fluctuation with VCC ∆VY/V VCC1 = 9 V (allowance: ±10%) 0 100 250 mV/V
Video output-temperature characteristics ∆VY/T Ta = −20°C to +70°C 0 5 10 %
YNR operation I SNYNR S/N, when YNR: min.→max. and −4 dB
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−1.5
sta
YNR operation II SNYNR Sharpness max., YNR: max. dB
(IFAGC) S/N at IF AGC 2 V→4 V
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on na
01−D7 = 1, when V13 = 1.5 V→3.5 V
cy
ABL sensitivity ABL 0.3 0.5 0.7 V/V
life
Pedestal level fluctuation
ct
White gradation correction 1 γ1 White detection pin V17 = 4.5 V 120 125 130 %
du
Difference of amplitude between
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GOUT gamma on/off
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Neck protector threshold voltage VNP 0.3 0.5 1.0 V
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TDC = × 100
M
as lat
∆AC
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VCO free running frequency fCN Difference from f = 3.579545 MHz −300 0 300 Hz
/D
fCO fluctuation with VCC ∆VC/V VCC1 = 9 V (allowance: ±10%) −300 0 300 Hz
ce
an
Band to become −3 dB
Ma
with VCC
Pl
SDB00001BEB 11
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CW output level (3.58 MHz) VCW AC component of (3.58 MHz) 0.6 1.1 1.4 V[p-p]
B.P.F. (Symmetrical) frequency fB.P.F. Band to become 400 600 800 kHz
characteristics −3 dB from 3.58 MHz
tin nc
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Slant of 3.58 MHz ±500 kHz
ge
B.P.F. (Asymmetrical) slant VB.P.F./f 9.0 dB/MHz
sta
RGB processing circuit
cle
(C−Y)/Y RC/Y Color bar input, BOUT 0.9 1.2 1.5 V[0-p]/
on na
cy
Contrast typ. color Data 00 = 60 V[p-p]
life
(C−Y), Y delay difference ∆TC/Y Color bar input, BOUT −100 0 100 ns
ct
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Phase of green→magenta
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External RGB input dynamic range VDEXT Contrast max. Data 03 = 7F 6.5 7.0 V[0-p]
n.
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Di ain
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Leakage when f = 1 MHz, 1 V[p-p], −60 −50
i
Internal/external crosstalk CTRGB dB
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YS = 5 V
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Spot killer operation VSPK V9 at which spot killer turns on by 7.3 7.7 8.0 V
decreasing V9 from 9 Vic. t in
on es
an ut e
lan nclu
M
as lat
Brightness variation with contrast VBAC Pedestal level DC difference between −250 0 250 mV
di
e
Color /B&W DC difference voltage DVCBW Pedestal level voltage difference −60 0 60 mV
/D
ce
Pedestal level fluctuation with VCC DVPL/V VCC1 = 9 V (allowance: ±10%) 0 200 400 mV/V
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External RGB output blanking voltage VBLK Burst input only 0.8 1.3 1.8 V
RGB limiter control range 1 VBEAM1 Input 2 V[p-p], contrast max. 6.4 6.7 7.0 V
RGB limiter 0E = 70
RGB limiter control range 2 VBEAM2 Input 2 V[p-p], contrast max. 5.6 6.0 6.4 V
RGB limiter 0E = F0
12 SDB00001BEB
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Lock detection output voltage 1 VLD1 V11, when horizontal AFC is locked 3.8 4.3 4.8 V
Lock detection output voltage 2 VLD2 V11, when horizontal AFC is unlocked. 0 0.1 0.5 V
Lock detection charge and discharge ILD DC measurement ±0.5 ±0.7 ±1.1 mA
tin nc
current
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sta
EBP (BLK) slice level VFBP Minimum voltage of pin 45, when 0.3 0.66 1.0 V
blanking is applied to RGB output
cle
on na
cy
EBP (AFC2) slice level VFBPH Minimum voltage of pin 45, when 1.45 1.85 2.25 V
life
AFC2 operates
ct
Horizontal AFC µ µH DC measurement 26 33 40 µA/µs
du
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Horizontal VCO β βH β curve gradient near f = 15.75 kHz 1.4 1.8 2.2 Hz/mV
sc te
µs
Burst gate pulse position PBGP
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Delay from HSYNC rise 0.2 0.4 0.6
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Di ain
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Pulse width, when fH = 15.75 kHz
i
V blanking pulse width WVN 1.04 1.14 1.24 ms
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EBP allowable range TFBP Time from HOUT rise to FBP center 12 19 µs
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synchronization
di
e
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Black-out operation voltage VBLOUT Difference voltage from hold-down 10 110 160 mV
tin
to black out
p
on
HSYNC2 output level VSCP HSYNC2 output DC level 8.0 8.2 8.4 V
isc
/D
µs
an
Horizontal output pulse duty cycle tHO Upward going pulse duty cycle 32 38 44 %
Ma
se
Horizontal output voltage (high) V50H High level DC voltage 2.8 3.1 3.4 V
ea
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SDB00001BEB 13
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Bus free before start tBUF 4.0 µs
Start condition set-up time tSU, STA 4.0 µs
Start condition hold time tHD, STA 4.0 µs
tin nc
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µs
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Low period SCL,SDA tLOW 4.0
sta
High period SCL tHIGH 4.0 µs
cle
Rise time SCL,SDA tR 1.0 µs
on na
cy
µs
life
Fall time SCL,SDA tF 0.35
ct
Data set-up time(write) tSU, DAT 0.25 µs
du
µs
mi UR ue ued pe pe Pro
Data hold time(write) tHD, DAT 0
sc te
n.
/w llo dis disc nan enan wing
Di ain
o
Stop condition set-up time tSU, STO 4.0 µs
i
/en at
d te t o
.jp rm
ne ain ain foll
n.p bo yp pe
DAC
co fo
/
co L a d t ty
pla m d m des
as lat
8-bit DAC DNLE L8 1LSB = {Data (FF)−Data (00)}/255 0.1 1.0 1.9 LSB
di
e
ue
Step
tin
p
1. Input signal
p:/ fo
en
1) VIF
int
se
2) SIF : fS = 4.5 MHz, VIN = 90 dBµ, modulation signal fM = 400 Hz, deviation: NTSC ±25 kHz
ea
14 SDB00001BEB
AN5165K
■ Electrical Characteristics at Ta = 25°C (continued)
• Standard conditions when testing (continued)
2. I2C BUS condition
Sub Address Data (H) Sub Address Data (H)
00 Color 40 08 Drive R 40
01 Tint 40 09 Drive B 40
02 Bright 80 0A Audio Adj, YNR 10
03 Contrast 40 0B AFT 10
ue e/
04 Sharpness 00 0C RFAGC 40
05 Cut-off R 80 0D Video Adj 08
06 Cut-off G 40 0E H center, RGB limiter 10
tin nc
07 Cut-off B 80
d
.
ge
sta
cle
on na
cy
life
■ Terminal Equivalent Circuits
ct
Pin No. Equivalent circuit Description I/O
du
mi UR ue ued pe pe Pro
1 Chroma oscillation pin (3.58 MHz) AC
sc te
n.
/w llo dis disc nan enan wing
C8
i o
15 pF
/en at
IN2 IN1
d te t o
.jp rm
ne ain ain foll
Temperature characteristic
n.p bo yp pe
200 µA 200 µA 500 µA product should be used for C8
co fo
/
co L a d t ty
(−750 ppm/°C)
pla m d m des
2 ic. t in
APC filter pin DC
on es
an ut e
lan nclu
as lat
25 µA
6.3 V
di
200 Ω
ue
2
pulled in and β curve
isc
1.0 µF 50 µA
afffected
/D
3 300 pF
ce
by noise.) f
R C
an
3.3 kΩ
p:/ fo
1 000 µA
en
htt visit
int
V2
Ma
se
16 kΩ
25 µA 25 µA • YM On (Half-tone) at 1.0 V[0-p] or
YS
higher
3V 1V
• YS ON(OSD input) at 3.0 V[0-p] or YM
270 Ω 1 kΩ
3 higher
• Recommended use range: 0 V to 6 V
50 kΩ
25 µA 25 µA
SDB00001BEB 15
AN5165K
ue e/
50 kΩ
5.0 V • Recommended use range: 0 V to 6 V
50 kΩ
0
from
µ-COM
tin nc
7 VCC1-1 (typ.9 V) DC
d
.
ge
• Video circuit 9V
sta
• Chroma circuit
cle
• RGB circuit
on na
cy
• Sync. circuit
life
• DAC circuit
ct
8 9 V (VCC1-1) R Out pin AC
du
mi UR ue ued pe pe Pro
9 G Out pin
sc te
100 µA
10 B Out pin
.se ng ntin tin ty e ty ur
50 Ω Pin 8 • BLK level approx. 1.5 V
ww wi co on ce c fo
9
n.
/w llo dis disc nan enan wing
o
• Recommended use range: −2.4 mA to
i
/en at
100 µA
d te t o
+4.8 mA d
.jp rm
ne ain ain foll
n.p bo yp pe
co fo
/
co L a d t ty
5V
(VCC2-2) ic. t in
• Phase of horizontal synchronizing signal when
on es
an ut e
lan nclu
as lat
to
Chroma
di
800 µA 12 kΩ
p
synchronization asynchronous
on
I2
800 µA output disappears and VOUT goes into free-
/D
ce
11 ZO
se
pin 50
ea
pin 41
HSYNC In
• HSYNC period, when pin 50
at high: I1 ON
at low: I2 ON
12 GND DC
• RGB circuit
• DAC. I2C circuit
• VIF (VCO) circuit
16 SDB00001BEB
AN5165K
ue e/
7.1 kΩ
6.9 kΩ
• When 01−D7 = 1, ABL functions, and brightness
7.1 kΩ
5 kΩ ABL decreases by lowering DC voltage of pin 13
2.7 V 6.9 kΩ • When pin 13 is grounded, ACC gain becomes
tin nc
13
min. and it is possible to measure chroma
d
.
ge
free-running frequency. Measuring point is
sta
pin 51.
cle
When neck protect time high • Recommended use range: 0 V to V
CC1
on na
cy
14 5V I2C BUS Data input pin AC
life
5V (VCC2-2)
• Input low level: 0.9 V or less (Pulse)
ct
3.25 V • Input high level: 3.1 V or more
20 µA 50 µA
du
2.7 kΩ
10 kΩ • ACK sink capability: 1.8 mA 5.0 V
mi UR ue ued pe pe Pro
Data 14 1 kΩ
sc te
n.
/w llo dis disc nan enan wing
to Logic
Di ain
o
Circuit
ACK
i
/en at
d te t o
30 kΩ 30 kΩ d
.jp rm
ne ain ain foll
n.p bo yp pe
co fo
/
co L a d t ty
pla m d m des
15 5V
ic. t in
I2C clock input pin AC
on es
an ut e
lan nclu
5V (VCC2-2)
• Input low level: 0.9 V or less (Pulse)
M
as lat
di
15 51 kΩ 0
on
100 Ω 2 kΩ
isc
from
µ-com
/D
to Logic
Circuit
ce
ACK
an
30 kΩ 30 kΩ
p:/ fo
en
htt visit
int
9V
(VCC1-1)
se
50 µA 50 µA
10 kΩ • RGB out blanking is applied when a voltage (Pulse)
H Sync.2
ea
8.2 V
0.7 V 3.9 kΩ • HSCP pulse output pin
16
2.7 kΩ 270 Ω 5.6 kΩ Horizontally synchronized 2 µs pulse is 5V
100 kΩ outputted. 0V
40 kΩ
• Recommended use range: − 0.8 mA to
0.2 mA, 0 V to 5.0 V
SDB00001BEB 17
AN5165K
ue e/
375 Ω 50 kΩ
6 kΩ
40 µA
50 µA
tin nc
18 VCC2-1 (typ.5 V) DC
d
.
ge
• VIF, SIF circuit 5V
sta
19 5V VIF input pin 1 AC
cle
(VCC2-1)
20 VIF input pin 2 f = fP
on na
3.5 V
cy
• VIF amp. input with balanced input DC level
life
27 kΩ
• Input max.120 dBµ approx. 2.7 V
1.2 kΩ
ct
1.2 kΩ Input resistance: 1.2 kΩ (45.75 MHz)
du
20
mi UR ue ued pe pe Pro
Input capacitance: 4.0 pF (45.75 MHz)
sc te
SAW 0.68 µH
19 .se ng ntin tin ty e ty ur
0.022 µF
ww wi co on ce c fo
n.
/w llo dis disc nan enan wing
Di ain
o
150 µA 150 µA
i
/en at
d te t o
.jp rm
ne ain ain foll
21 GND DC
n.p bo yp pe
co fo
/
• For VIF and SIF circuit
co L a d t ty
pla m d m des
22 5V ic. t in
RF AGC output pin DC
on es
an ut e
lan nclu
3 kΩ 6 kΩ (VCC2-1)
M
as lat
• Collector open output
di
10 kΩ
IF AGC
Bias Maximum sink current min.: 1.5 mA
tin
22
p
on
to Tuner
270 Ω RF AGC
isc
33 kΩ Control
Bias
/D
40 kΩ
ce
1 kΩ 1 kΩ
an
p:/ fo
en
9V
• Filter pin for APC circuit of SIF. approx. 2.5 V
Ma
(VCC1-2)
se
12.2 kΩ 7.5 kΩ
1.5 V
270 Ω 875 Ω
57 kΩ
23
4 pF 100 pF
18 SDB00001BEB
AN5165K
150 µA 800 µA
ue e/
25 9V
External video input pin AC
(VCC1-1) • Input pin for external video signal and DC 1 V[p-p]
50 µA (VCC1-2)
50 µA
Int. Video cut input (Composite)
d
.
1.6 V
ge
to
Video SW 4.7 µF • ZO is 100 Ω or less
sta
25
ZO<100 Ω
500 Ω
cle
7 µA
DC
on na
cy
approx. 1.6 V
life
26 9V Decoupling pin DC
ct
(VCC1-2)
• S-curve in IC is wideband, but DC feedback is
du
10 kΩ
mi UR ue ued pe pe Pro
applied so that DC voltage of output signal
sc te
becomes constant.
270 Ω
.se ng ntin tin ty e ty ur
1.7 kΩ 26 • DC level (typ. 4.5 V), fS→high: V26→low
ww wi co on ce c fo
typ. 4.5 V C
4.7 µF
• If C (4.7 µF) is too small, sound distortion
n.
/w llo dis disc nan enan wing
Di ain
270 Ω
o
3 kΩ 3 kΩ
i
tends to become larger at low frequency.
/en at
d te t o
.jp rm
ne ain ain foll
n.p bo yp pe
20 kΩ
co fo
/
co L a d t ty
pla m d m des
100 µA 13 µA
ic. t in
on es
an ut e
lan nclu
M
9V
di
(VCC1-2)
• Input pin for external audio signal. DC cut 0 kHz to 20 kHz
e
5.4 V
ue
50 µA
input.
tin
p
to
Audio SW 65 kΩ 270 Ω
level.
isc
27
10 µF
270 Ω • Input max. 7 V[p-p]
/D
ce
an
150 µA
p:/ fo
en
9V
int
(VCC1-2)
3 kΩ • Input max. 110 dBµ f = fS
Ma
3 kΩ
0.01 µF 270 Ω
se
Blooming to SIF
DC Limitter Amp. to determine absolute clip point are provided. approx. 2.3 V
80 pF
(2.0 V to 4.5 V)
100 µA • Recommended use range: 0 V to VCC1 (9 V)
25 µA
SDB00001BEB 19
AN5165K
ue e/
However, sag tends to appear easily.
0.47 µF
tin nc
9V
(VCC1-2) • INT.Video or EXT.Video selected by AV 2 V[p-p]
d
.
ge
100 µA
500 Ω
SW is outputted.
sta
50 Ω • Recommended use range −3.2 mA to
30
cle
+0.4 mA DC level
on na
cy
approx. 4.2 V
life
400 µA
ct
31 AFT output pin DC
du
9V
mi UR ue ued pe pe Pro
(VCC1-2) • Offset of center voltage is adjusted by bus
sc te
1.1 kΩ 1.1 kΩ
9V
• When AFT defeat SW is turned on (0B = 00),
.se ng ntin tin ty e ty ur
33 kΩ
V31 becomes a value determined by external
ww wi co on ce c fo
n.
to Tuner
/w llo dis disc nan enan wing
31 resistance-divider.
Di ain
270 Ω
o
• µ of AFT is variable by impedance of
i
0.01 µF
/en at
33 kΩ
d te t o
.jp rm
externally attached resistor.
ne ain ain foll
n.p bo yp pe
1.1 kΩ 40 kΩ 1.1 kΩ
co fo
/
co L a d t ty
pla m d m des
max. 350 µF
ic. t in
on es
an ut e
lan nclu
as lat
9V
di
(VCC1-1)
50 µA • Input pin for signal detected by VIF circuit 1 V[p-p]
e
(VCC1-2)
ue
to
Video SW 4.7 µF
Typical input: 1 V[p-p] (max. 1.5 V[p-p])
isc
32
ZO
ZO ≅ 280 Ω
/D
500 Ω
7 µA
ce
DC level
an
approx. 1.6 V
p:/ fo
en
9V
(VCC1-2)
• Adjusted to center value by I2C bus approx.
Ma
150 µA
se
33
external video mode (04−D6 = 1)
Recommended use range: −1.6 mA to
800 µA + 0.8 mA
20 SDB00001BEB
AN5165K
ue e/
10 kΩ
3.25 V
to
220 pF to1800 pF
34
VOC
0.47 µF
tin nc
75 µA
75 Ω
d
.
ge
25 µA
sta
35 5V
VIF oscillation pin AC
cle
(VCC2-1)
36 • Oscillation coil is changed according to approx.
on na
1.5 kΩ 1.5 kΩ
cy
35 36 VIF frequency. 0.3 V[p-p]
life
• Allowable value of dispersion for coil DC level
ct
resonance point is within 1%. approx. 3.9 V
du
mi UR ue ued pe pe Pro
sc te
n.
/w llo dis disc nan enan wing
Di ain
1 200 µA
o
1 200 µA 300 µA 300 µA
i
/en at
d te t o
.jp rm
ne ain ain foll
37 VCC1-2 (typ.9 V) DC
n.p bo yp pe
co fo
IF circuit 9V
/
co L a d t ty
pla m d m des
38 ic. t in
Black level detection pin DC
on es
an ut e
lan nclu
9 V (VCC1-1)
• Black level detection pin for black extension approx. 5.1 V
M
as lat
2.5 2.5 kΩ
di
2.5 kΩ
kΩ circuit
e
−Y
ue
circuit is held.
on
6.6 kΩ 6.6 kΩ
Black detection sensitivity drops when
isc
18 pF
270 Ω
ce
100 µA 50 µA
becomes impossible unless a large black
an
38 area.
p:/ fo
en
htt visit
ZO
int
4.7 µF
Ma
10 kΩ
se
ea
9V
39 (VCC1-1) Vertical sync. separation input pin AC
Pl
470 pF 60 pF 10 µA 8 µA
SDB00001BEB 21
AN5165K
ue e/
29
is determined by the selection of external
200 Ω C1 220
2.2 µF constant C1.
tin nc
41 Horizontal sync separation input pin AC
d
.
ge
• Internal circuit of pin 39 and 41 are the same. 2 V[p-p]
sta
• When R→large, slice level becomes deeper
cle
(Weak to Sync compression). When R→
on na
cy
small, slice level becomes shallower
life
(Weak to fluctuation such as Ver. Sag).
ct
• Sync. Top is clamped at 3.5 V.
du
mi UR ue ued pe pe Pro
42 VCC2-2 (typ.5 V) DC
sc te
n.
/w llo dis disc nan enan wing
39 kΩ Chroma
o
200 Ω
i
attenuator
/en at
39 kΩ circuit • Pin 43 is chroma signal input pin, and black 300 mV[p-p]
d te t o
.jp rm
ne ain ain foll
co fo
128 kΩ
/
270 Ω
co L a d t ty
68 pF 100 µA
60 pF
ic. t in
DC level: high ↔ low 4.5 V
on es
an ut e
lan nclu
Blstart
Black extension DC Start point: Shallow ↔ Deep
M
as lat
di
44 GND DC
on
• Threshold level
htt visit
int
Ma
24 kΩ
to AFC: 1.9 V
ea
AFC
to 2.7 kΩ 270 Ω • A voltage input of 0 V or less is inhibited.
Pl
0.7 V
HBLK 45
60 kΩ • Recommended use range: 0 V to VCC2 (5 V)
100 kΩ
40 kΩ
50 µA
22 SDB00001BEB
AN5165K
ue e/
47 AFC1. Horizontal β curve
1 µF fH
Hor. Sync. C2 Hor.
OSC
tin nc
0.033 µF
C1
d
200 µA
.
R2
ge
1 000 µA 1.8 kΩ V53
sta
48 6.2 V Horizontal oscillation pin AC
cle
(VCC3)
• Oscillation takes place at 32 × fH ≅ 503 kHz f = 32 fH
on na
cy
by ceramic oscillator. (approx.
life
22 kΩ
• Horizontal and vertical pulse are generated 500 kHz)
ct
300 Ω
by count-down circuit inside the IC.
du
200 µA 10 kΩ 10 kΩ
80 µA
mi UR ue ued pe pe Pro
sc te
48
100 µA
.se ng ntin tin ty e ty ur
220 pF: Temperature characteristic product should
ww wi co on ce c fo
be used (−750 ppm/°C)
n.
/w llo dis disc nan enan wing
Di ain
i o
49 Overvoltage protection input pin DC
/en at
d te t o
9V d
.jp rm
ne ain ain foll
co fo
at VREF (pin 46) = 6.2 V;
/
0V
co L a d t ty
pla m d m des
ic. t in
(1) Horizontal oscillation come to be out
on es
an ut e
lan nclu
1 kΩ V
of synchronization: approx. 6.15 V
M
as lat
CC3
49
48.3 kΩ
di
20 kΩ
on
100 µA
isc
/D
ce
(VCC3)
4.3 V • Duty cycle approx. 37% Pulse
p:/ fo
en
19 kΩ
• Recommended use range: −6.4 mA to 3.5 V
htt visit
int
50 Ω +0.1 mA
Ma
0
se
50
ea
10 kΩ 3.5 V
40 kΩ
Pl
0V
Hor. Out
SDB00001BEB 23
AN5165K
ue e/
596 kΩ 100 µA 30 kΩ
Hold Recommended use range: − 0.4 mA to + 0.1 mA
0 V to VCC1
tin nc
52 Vertical pulse output pin AC
d
5V
.
ge
(VCC2-2)
50 kΩ • Negative polarity, pulse width 6.25 H Pulse
sta
52 • Recommended use range: − 0.8 mA to + 0.1 mA
4.2 V 4.2 V
cle
43 kΩ
on na
cy
0 0
life
ct
du
mi UR ue ued pe pe Pro
sc te
n.
/w llo dis disc nan enan wing
i o
/en at
d te t o
.jp rm
ne ain ain foll
n.p bo yp pe
47.70±0.30
co fo
/
co L a d t ty
pla m d m des
52 27
ic. t in
on es
an ut e
lan nclu
13.70±0.20
M
as lat
di
e
ue
1 26
tin
3.85±0.30
p
on
isc
/D
0.70 min.
3.30±0.30
ce
1.00±0.10 +0.10
p:/ fo
0.25 -0.05
en
Seating plane
3° to 15°
htt visit
int
Ma
se
ea
Pl
24 SDB00001BEB
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ue e/
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
tin nc
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
d
.
Standards in advance to make sure that the latest specifications satisfy your requirements.
ge
sta
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
cle
on na
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
cy
defect which may arise later in your equipment.
life
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
ct
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
du
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
mi UR ue ued pe pe Pro
sc te
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
.se ng ntin tin ty e ty ur
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
ww wi co on ce c fo
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
n.
/w llo dis disc nan enan wing
Di ain
o
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
i
/en at
d te t o
.jp rm
ne ain ain foll
n.p bo yp pe
co fo
/
co L a d t ty
pla m d m es
ic. t in
ne lud
on es
an ut e
pla inc
M
as lat
d
ue
tin
on
isc
/D
ce
an
p:/ fo
en
htt isit
int
Ma
v
se
ea
Pl