Power Transistors

2SC5885
Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor Unit: mm

3.0±0.2
9.9±0.3 4.6±0.2
2.9±0.2
■ Features
• High breakdown voltage: VCBO ≥ 1 500 V φ3.2±0.1

15.0±0.3
• Wide safe operation area
• Built-in dumper diode

8.0±0.2
1.0±0.1
0.76±0.06

4.1±0.2
1.25±0.1
1.45±0.15 2.6±0.1
■ Absolute Maximum Ratings TC = 25°C

2.0±0.2
1.2±0.15

13.7+0.5
-0.2
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0.7±0.1
Parameter Symbol Rating Unit 0.75±0.1

Collector-base voltage (Emitter open) VCBO 1 500 V 2.54±0.2

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5.08±0.4

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Collector-emitter voltage (E-B short) VCES 1 500 V

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Emitter-base voltage (Collector open) VEBO 5 V

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Base current IB 3 A

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Collector current IC 6 A

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TO-220H Package

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Peak collector current * ICP 9 A

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Marking Symbol: C5885
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Collector power dissipation PC 30 W
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Ta = 25°C 2
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Internal Connection
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Junction temperature Tj 150 °C

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Storage temperature Tstg −55 to +150 °C C

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Note) *: Non-repetitive peak collector current B

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■ Electrical Characteristics TC = 25°C ± 3°C

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Parameter Symbol Conditions Min Typ Max Unit

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Emitter-base voltage (Collector open) VEBO IE = 500 mA, IC = 0 5 V

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Forward voltage VF IF = 3 A −2 V
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Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0 50 µA

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VCB = 1 500 V, IE = 0 1 mA
VCE = 5 V, IC = 3 A 
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Forward current transfer ratio hFE 5 10

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Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.75 A 2.5 V

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Base-emitter saturation voltage VBE(sat) IC = 3 A, IB = 0.75 A 1.5 V

Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
Storage time tstg IC = 3 A, Resistance loaded 5.0 µs
Fall time tf IB1 = 0.75 A, IB2 = −1.5 A 0.5 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: March 2004 SJD00312AED 1

2SC5885

PC  Ta Safe operation area Safe operation area (Horizontal operation)

50 100 10
Non repetitive pulse, TC = 25°C
(1) TC = Ta fH = 15.45 kHz, TC < 90°C
(2) Without heat sink 9 A.S.O for a single
t=
Collector power dissipation PC (W)

pulse load caused by

ICP 10 ms t = 100 µs EHT flash over during
40 10 8
horizontal operation.

Collector current IC (A)

IC t= One action of the device must

Collector current IC (A)

7 not use in all areas.
DC 1 ms
(area A, B and C)
30 1 6 But it is able to use in two areas.
(area A and B or area B and C)
5
(1)
20 A
10−1 4

10 10−2 2

1 B C
(2)
< 1 mA
0 10−3 0
0 25 50 75 100 125 150 1 10 100 1 000 0 500 1 000 1 500 2 000

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Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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2 SJD00312AED
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
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Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

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defect which may arise later in your equipment.

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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

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mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

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thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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Electric Industrial Co., Ltd.

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