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Power Transistors

2SC4212 www.DataSheet4U.com

Silicon NPN triple diffusion planar type


Unit: mm
For color TV horizontal deflection driver 8.0+0.5
–0.1 3.2±0.2

φ 3.16±0.1

■ Features

11.0±0.5
3.8±0.3
• High collector to emitter voltage VCEO

3.05±0.1
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink

1.9±0.1
16.0±1.0
■ Absolute Maximum Ratings TC = 25°C
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Parameter Symbol Rating Unit
Collector to base voltage VCBO 350 V 0.75±0.1
0.5±0.1
Collector to emitter voltage VCEO 300 V 0.5±0.1 1.76±0.1
4.6±0.2
2.3±0.2
Emitter to base voltage VEBO 7.5 V 1 : Emitter
Peak collector current ICP 400 mA 1 2 3
2 : Collector
3 : Base
Collector current IC 200 mA TO-126B Package
Collector power dissipation PC 1.2 *1 W
5 *2

Junction temperature Tj 150 °C


Storage temperature Tstg −55 to +150 °C
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink

■ Electrical Characteristics TC = 25°C


Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 200 V, IE = 0 2 µA
Emitter cutoff current IEBO VEB = 5 V, IC = 0 2 µA
Collector to base voltage VCBO IC = 100 µA, IE = 0 350 V
Collector to emitter voltage VCEO IC = 5 mA, IB = 0 300 V
Emitter to base voltage VEBO IE = 100 µA, IC = 0 7.5 V
Forward current transfer ratio hFE VCE = 10 V, IC = 10 mA 40 250
Collector to emitter saturation voltage VCE(sat) IC = 50 mA, IB = 5 mA 1 V
Transition frequency fT VCB = 30 V, IE = −10 mA, f = 200 MHz 50 MHz
Collector output capacitance Cob VCB = 50 V, IE = 0, f = 1 MHz 4.5 pF

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2SC4212 Power Transistors

PC  T a IC  VCE www.DataSheet4U.com
I V C BE
6 200 240
(1)With a 100×100×2mm TC=25˚C VCE=10V
25˚C
Al heat sink
Collector power dissipation PC (W)

(2)Without heat sink TC=75˚C –25˚C


5 200
160

Collector current IC (mA)

Collector current IC (mA)


IB=2.0mA
1.8mA
4 1.6mA 160
120 1.4mA
1.2mA
1.0mA
3 0.8mA 120
(1)
0.6mA
80
2 0.4mA 80

40 0.2mA
1 40
(2)

0 0 0
0 20 40 60 80 100 120 140 160 180 200 0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0
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Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I E
10 1000 200
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=10V
VCB=30V
f=200MHz
Forward current transfer ratio hFE

TC=25˚C

Transition frequency fT (MHz)


3 300
TC=100˚C 160
25˚C
1 100 –25˚C
120
25˚C

0.3 TC=100˚C 30

80
–25˚C
0.1 10

40
0.03 3

0.01 1 0
1 3 10 30 100 1 3 10 30 100 –1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA) Collector current IC (mA) Emitter current IE (A)

Cob  VCB Area of safe operation (ASO)


20 10
Single pulse
IE=0
Collector output capacitance Cob (pF)

TC=25˚C
f=1MHz
TC=25˚C 3
16
Collector current IC (A)

1
ICP
t=10ms
12 0.3
IC
0.1
t=1s
8
0.03 DC

0.01
4

0.003

0 0.001
1 3 10 30 100 1 3 10 30 100 300 1000
Collector to base voltage VCB (V) Collector to emitter voltage VCE (V)

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