Power Transistors

2SC2258
Silicon NPN triple diffusion planar type

For high breakdown voltage general amplification Unit: mm

8.0+0.5
–0.1 3.2±0.2

φ 3.16±0.1
■ Features

11.0±0.5
• High collector-emitter voltage (Base open) VCEO

3.8±0.3

3.05±0.1
• High transition frequency fT
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink

1.9±0.1
16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 250 V 0.75±0.1
0.5±0.1
Collector-emitter voltage (Base open) VCEO 250 V 0.5±0.1 1.76±0.1
4.6±0.2
2.3±0.2
Emitter-base voltage (Collector open) VEBO 7 V
1: Emitter
Collector current IC 100 mA 1 2 3 2: Collector
3: Base
Peak collector current ICP 150 mA
TO-126B-A1 Package
Collector power dissipation PC 1.2 *1 W
4 *2

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C
Note) *1: Without heat sink
*2 :With a 100 × 100 × 2 mm Al heat sink

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Emitter-base voltage (Collector open) VEBO IE = 0.1 mA, IC = 0 7 V
Base-emitter voltage VBE VCE = 20 V, IC = 40 mA 1.2 V
Collector-emitter cutoff current ICER VCE = 250 V, RBE = 100 kΩ 100 µA
(Resistor between B and E)
Forward current transfer ratio hFE1 VCE = 20 V, IC = 40 mA 40 
hFE2 VCE = 50 V, IC = 5 mA 30
Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IB = 5 mA 1.2 V
Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz 100 MHz
Collector output capacitance Cob VCB = 50 V, IE = 0, f = 1 MHz 3.0 4.5 pF
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: January 2003 SJD00098BED 1

2SC2258

PC  Ta IC  VCE IC  VBE
5 120 120
(1)With a 100×100×2mm TC=25˚C VCE=10V
Al heat sink 1.8mA
IB=2.0mA
Collector power dissipation PC (W)

(2)Without heat sink 100 25˚C

(1) 1.6mA 100
4 TC=100˚C –25˚C

Collector current IC (mA)

Collector current IC (mA)

1.4mA
1.2mA
80 80
1.0mA
3
0.8mA
0.6mA
60 60
0.4mA
2
40 40
(2) 0.2mA
1
20 20

0 0 0
0 40 80 120 160 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

IC  I B VCE(sat)  IC IB  VBE
120 100 3.0
Collector-emitter saturation voltage VCE(sat) (V)

IC/IB=10
VCE=10V VCE=10V
TC=25˚C TC=25˚C
100 2.5
Collector current IC (mA)

10

Base current IB (mA)

80 2.0

60 1 1.5

TC=100˚C
40 25˚C 1.0
0.1
20 –25˚C 0.5

0 0.01 0
0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA) Collector current IC (A) Base-emitter voltage VBE (V)

hFE  IC fT  I E Cob  VCB

240 160 10
C (pF)

VCE=10V IE=0
VCB=10V
f=1MHz
f=200MHz
(Common base, input open circuited) ob

TC=25˚C
200
Forward current transfer ratio hFE

TC=25˚C
Transition frequency fT (MHz)

8
120
TC=100˚C
160
6
Collector output capacitance

120 80
25˚C
4
80
–25˚C
40
2
40

0 0 0
0.01 0.1 1 10 −1 −10 −100 1 10 100
Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V)

2 SJD00098BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
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electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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• Any applications other than the standard applications intended.
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL