Transistor

2SC3931
Silicon NPN epitaxial planer type

For high-frequency amplification

Unit: mm

(0.425)
+0.1 +0.10
0.3Ð0.0 0.15Ð0.05

■ Features 3

● Optimum for RF amplification of FM/AM radios.

1.25±0.10

2.1±0.1
● High transition frequency fT.
● S-Mini type package, allowing downsizing of the equipment and

5û
1 2
automatic insertion through the tape packing and the magazine

0.2±0.1
packing. (0.65) (0.65)

1.3±0.1

2.0±0.2

■ Absolute Maximum Ratings (Ta=25˚C) 10û

Parameter Symbol Ratings Unit

+0.2
0.9Ð0.1
0.9±0.1
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V

0 to 0.1
Emitter to base voltage VEBO 3 V
1:Base
Collector current IC 15 mA 2:Emitter EIAJ:SC–70
3:Collector SMini3-G1 Package
Collector power dissipation PC 150 mW
Junction temperature Tj 150 ˚C Marking symbol : U
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO IC = 10µA, IE = 0 30 V
Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V
Forward current transfer ratio hFE* VCB = 6V, IE = –1mA 65 260
Base to emitter voltage VBE VCB = 6V, IE = 1mA 0.72 V
Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz 450 650 MHz
Common emitter reverse transfer capacitance Cre VCE = 6V, IC = 1mA, f = 10.7MHz 0.8 1 pF
Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB
Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB

*h Rank classification
FE

Rank C D
hFE 65 ~ 160 100 ~ 260
Marking Symbol UC UD

422
Transistor 2SC3931

PC — Ta IC — VCE IC — I B
240 12 12
Ta=25˚C VCE=6V
Collector power dissipation PC (mW)

Ta=25˚C
IB=100µA
200 10 10

Collector current IC (mA)

Collector current IC (mA)

80µA
160 8 8

60µA
120 6 6

40µA
80 4 4

20µA
40 2 2

0 0 0
0 20 40 60 80 100 120 140 160 0 6 12 18 0 60 120 180
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA)

IC — VBE VCE(sat) — IC hFE — IC

30 100 360
Collector to emitter saturation voltage VCE(sat) (V)

VCE=6V IC/IB=10 VCE=6V

Forward current transfer ratio hFE

25˚C 30
25 300
Collector current IC (mA)

10
Ta=75˚C –25˚C
20 240
3

Ta=75˚C
15 1 180
25˚C

0.3 –25˚C
10 120
25˚C Ta=75˚C
0.1

5 60
–25˚C
0.03

0 0.01 0
0 0.4 0.8 1.2 1.6 2.0 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA)

fT — IE Zrb — IE Cre — VCE

1200 120 2.4
Common emitter reverse transfer capacitance Cre (pF)

VCB=6V IC=1mA
VCB=6V
f=2MHz f=10.7MHz
Reverse transfer impedance Zrb (Ω)

Ta=25˚C
Ta=25˚C Ta=25˚C
Transition frequency fT (MHz)

1000 100 2.0

800 80 1.6

600 60 1.2

400 40 0.8

200 20 0.4

0 0 0
– 0.1 – 0.3 –1 –3 –10 –30 –100 – 0.1 – 0.3 –1 –3 –10 0.1 0.3 1 3 10 30 100
Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V)

423
Transistor 2SC3931

Cob — VCB PG — IE NF — IE
1.2 40 12
IE=0 f=100MHz f=100MHz
Collector output capacitance Cob (pF)

f=1MHz Rg=50Ω Rg=50kΩ

Ta=25˚C 35 Ta=25˚C Ta=25˚C
1.0 10

30

Noise figure NF (dB)

Power gain PG (dB)
VCE=10V
0.8 8
25 6V

0.6 20 6

15
0.4 4 VCE=6V, 10V
10

0.2 2
5

0 0 0
0 5 10 15 20 25 30 – 0.1 – 0.3 –1 –3 –10 –30 –100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA)

bie — gie bre — gre bfe — gfe

20 0 0
yie=gie+jbie 150
10.7 10.7
Reverse transfer susceptance bre (mS)

Forward transfer susceptance bfe (mS)

yre=gre+jbre – 0.4mA 58
VCE=10V –4mA 25
18 VCE=10V –1mA
100 100
–7mA –1 –20
Input susceptance bie (mS)

16 150
–2mA
–2mA –4mA
14
100 –2 –40
–1mA 150
58 –4mA 100
12 58
58 IE=–7mA
10 –3 –60 f=150MHz
–1mA
IE=–7mA
100
IE=– 0.5mA

8
58
–4 100 –80
6
25
4 25
–5 –100
2 yfe=gfe+jbfe
f=10.7MHz f=150MHz VCE=10V
0 –6 –120
0 3 6 9 12 15 – 0.5 – 0.4 – 0.3 – 0.2 – 0.1 0 0 20 40 60 80 100
Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS)

boe — goe
1.2
IE=– 0.5mA
–1mA

150

–2mA
Output susceptance boe (mS)

1.0
–4mA
100

0.8
–7mA

0.6
58

0.4

25

0.2
f=10.7MHz yoe=goe+jboe
VCE=10V
0
0 2 4 6 8 10
Output conductance goe (mS)

424
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2001 MAR