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2SB1218A
Silicon PNP epitaxial planer type
(0.425)
+0.1 +0.10
0.3Ð0.0 0.15Ð0.05
■ Features 3
1.25±0.10
●
2.1±0.1
● S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
5û
1 2
packing.
0.2±0.1
(0.65) (0.65)
1.3±0.1
10û
Parameter Symbol Ratings Unit
+0.2
0.9Ð0.1
0.9±0.1
Collector to base voltage VCBO –45 V
Collector to emitter voltage VCEO –45 V
0 to 0.1
Emitter to base voltage VEBO –7 V
Peak collector current ICP –200 mA 1:Base
2:Emitter EIAJ:SC–70
Collector current IC –100 mA
3:Collector SMini3-G1 Package
Collector power dissipation PC 150 mW
Junction temperature Tj 150 ˚C Marking symbol : B
Storage temperature Tstg –55 ~ +150 ˚C
*h Rank classification
FE
Rank Q R S
hFE 160 ~ 260 210 ~ 340 290 ~ 460
Marking Symbol BQ BR BS
232
Transistor 2SB1218A
PC — Ta IC — VCE IC — I B
240 –120 –60
Ta=25˚C VCE=–5V
Collector power dissipation PC (mW)
Ta=25˚C
200 –100 –50
–100µA
40 –20 –10
–50µA
0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 –150 –300 –450
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA)
–300 –1
Base current IB (µA)
–160
–250 – 0.3 Ta=75˚C
25˚C
–200 –120 – 0.1
–25˚C
–150 – 0.03
–80
–100 – 0.01
–40
–50 – 0.003
0 0 – 0.001
0 – 0.6 –1.2 –1.8 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –1 –3 –10 –30 –100 –300 –1000
Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA)
Ta=25˚C f=1MHz
140 7
Forward current transfer ratio hFE
Ta=25˚C
Transition frequency fT (MHz)
500
120 6
400
Ta=75˚C 100 5
300 25˚C 80 4
–25˚C 60 3
200
40 2
100
20 1
0 0 0
–1 –3 –10 –30 –100 –300 –1000 0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100
Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V)
233
Transistor 2SB1218A
NF — IE NF — IE h Parameter — IE
6 20
VCB=–5V
VCB=–5V 300
Rg=50kΩ
f=1kHz 18
Ta=25˚C
5 Rg=2kΩ
hfe
Ta=25˚C 16
100
Noise figure NF (dB)
h Parameter
12 hoe (µS)
f=100Hz 30
3 10
1kHz
8 10
2 10kHz
6
hie (kΩ)
4 3
1
VCE=–5V
2 f=270Hz
hre (✕10–4) Ta=25˚C
0 0 1
0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.1 0.3 1 3 10
Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA)
h Parameter — VCE
300 IE=2mA
f=270Hz
hfe Ta=25˚C
100
h Parameter
30
hoe (µS)
10
hre (✕10–4)
3
hie (kΩ)
1
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
234
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and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
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Consult our sales staff in advance for information on the following applications:
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(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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2001 MAR