Power Transistors

2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
Unit: mm
For power amplification and switching 10.0±0.2 4.2±0.2

0.7±0.1
5.5±0.2 2.7±0.2
Complementary to 2SD1276 and 2SD1276A

4.2±0.2
■ Features

7.5±0.2
φ3.1±0.1
High foward current transfer ratio hFE

16.7±0.3
●

● High-speed switching
● Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2

4.0
■ Absolute Maximum Ratings
1.4±0.1
(TC=25˚C)

14.0±0.5
Solder Dip
+0.2
Parameter Symbol Ratings Unit 0.8±0.1
0.5 –0.1

Collector to 2SB950 –60

VCBO V
base voltage 2SB950A –80 2.54±0.25

Collector to 2SB950 –60 5.08±0.5

VCEO V 1 2 3
emitter voltage 2SB950A –80 1:Base
2:Collector
Emitter to base voltage VEBO –5 V
3:Emitter
Peak collector current ICP –8 A TO–220 Full Pack Package(a)

Collector current IC –4 A Internal Connection

Collector power TC=25°C 40
PC W C
dissipation Ta=25°C 2
Junction temperature Tj 150 ˚C B

Storage temperature Tstg –55 to +150 ˚C

E
■ Electrical Characteristics (TC=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SB950 VCB = –60V, IE = 0 –200
ICBO µA
current 2SB950A VCB = –80V, IE = 0 –200
Collector cutoff 2SB950 VCE = –30V, IB = 0 –500
ICEO µA
current 2SB950A VCE = –40V, IB = 0 –500
Emitter cutoff current IEBO VEB = –5V, IC = 0 –2 mA
Collector to emitter 2SB950 –60
VCEO IC = –30mA, IB = 0 V
voltage 2SB950A –80
hFE1 VCE = –3V, IC = – 0.5A 1000
Forward current transfer ratio
hFE2 * VCE = –3V, IC = –3A 2000 10000
Base to emitter voltage VBE VCE = –3V, IC = –3A –2.5 V
VCE(sat)1 IC = –3A, IB = –12mA –2 V
Collector to emitter saturation voltage
VCE(sat)2 IC = –5A, IB = –20mA –4 V
Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz 20 MHz
Turn-on time ton 0.3 µs
IC = –3A, IB1 = –12mA, IB2 = 12mA,
Storage time tstg 2 µs
VCC = –50V
Fall time tf 0.5 µs

*h Rank classification
FE2

Rank Q P
hFE2 2000 to 5000 4000 to 10000

1
Power Transistors 2SB950, 2SB950A

PC — Ta IC — VCE IC — VBE
50 –6 –10
(1) TC=Ta TC=25˚C VCE=–3V
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

Al heat sink –5 IB=–3.0mA

40 (3) With a 50 × 50 × 2mm –8
–2.5mA

Collector current IC (A)

Collector current IC (A)

Al heat sink –2.0mA
(4) Without heat sink –1.5mA
(PC=2W) –4 –1.0mA
25˚C
30 –6
– 0.5mA
TC=100˚C –25˚C
–3
(1) – 0.4mA
20 –4
–2 – 0.3mA

– 0.2mA
10 –2
(2) –1
(3)
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 0 – 0.8 –1.6 –2.4 –3.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC Cob — VCB

–100 106 10000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=250 VCE=–3V IE=0

Collector output capacitance Cob (pF)

f=1MHz
Forward current transfer ratio hFE

–30 3000 TC=25˚C

–10 105 1000

TC=100˚C
–3 300
25˚C 25˚C
TC=100˚C
–1 104 100
–25˚C

– 0.3 –25˚C 30

– 0.1 103 10

– 0.03 3

– 0.01 102 1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V)

Area of safe operation (ASO) Rth(t) — t

–100 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

–30
102 (1)
Collector current IC (A)

–10 ICP

t=1ms (2)
–3 IC
10
10ms
–1
DC
1
– 0.3

– 0.1
10–1
2SB950A
2SB950

– 0.03

– 0.01 10–2
–1 –3 –10 –30 –100 –300 –1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)