Power Transistor Arrays

PUA3127 (PU3127)
Silicon NPN triple diffusion planar type

For power amplification/switching Unit: mm

20.2±0.3 4.0±0.2

■ Features
• High forward current transfer ratio hFE which has satisfactory linearity

1.65±0.2

8.0±0.2
9.5±0.2
• NPN 3 elements
0.8±0.25

■ Absolute Maximum Ratings TC = 25°C

Solder Dip
0.5±0.15

4.4±0.5
5.3±0.5
1.0±0.25
Parameter Symbol Rating Unit 2.54±0.2 0.5±0.15

Collector-base voltage (Emitter open) VCBO 35±5 V

7 × 2.57 = 17.78±0.25
Collector-emitter voltage (Base open) VCEO 35±5 V
C 1.5±0.5 1: Emitter
Emitter-base voltage (Collector open) VEBO 6 V 2: Base
3: Collector
Collector current IC 3 A 1 2 3 4 5 6 7 8 4: Base
Peak collector current ICP 6 A 5: Collector
6: Base
Base current IB 1 A 7: Collector
8: Emitter
Collector power dissipation PC 15 W SIP8-A1 Package
Ta = 25°C 2.4
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0 30 40 V
Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0 100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 30 V, IB = 0 100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 100 µA
Forward current transfer ratio hFE VCE = 4 V, IC = 0.5 A 500 2 500 
Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.05 A 1.0 V
Transition frequency fT VCE = 12 V, IC = 0.2 A, f = 10 MHz 50 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

■ Internal Connection
3 5 7

2 4 6

1 8

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2004 SJK00015AED 1

 PUA3127

PC  Ta IC  VCE IC  VBE
20 1.0 5
T C = Ta VCE = 4 V
IB = 1.2 mA TC = 25°C
(1)
(2) With a 50 × 50 × 2 mm
Al heat sink
Collector power dissipation PC (W)

(3) With a 50 × 25 × 2 mm 1 mA
16 Al heat sink 0.8 4 25°C
(1)
(4) Without heat sink TC = 100°C

Collector current IC (A)

Collector current IC (A)
0.7 mA

0.6 mA −25°C
12 0.6 3
0.5 mA

0.4 mA
8 0.4 2
0.3 mA
(2)
(3) 0.2 mA
4 0.2 1
(4) 0.1 mA

0 0 0
0 40 80 120 160 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

VCE(sat)  IC hFE  IC f T  IC
100 104 1 000
IC / IB = 40 VCE = 4 V
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 12 V
TC = 25°C
TC = 100°C
Forward current transfer ratio hFE

Transition frequency fT (MHz)

10 103
−25°C
25°C 100
TC = 100°C

25°C
1 102

10
−25°C
0.1 10

0.01 1 1
0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Cob  VCB Safe operation area

1 000 100
C (pF)

IE = 0 Non repetitve pulse

f = 1 MHz TC = 25°C (per circuit)
TC = 25°C
(Common base, input open circuited) ob

10
Collector current IC (A)

ICP
100 t = 1 ms
t = 10 ms
Collector output capacitance

10

0.1

1 0.01
1 10 100 1 10 100 1 000
Collector-base voltage VCB (V) Collector-emitter voltage VCE (V)

2 SJK00015AED
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2003 SEP