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MIP705
Silicon MOS IC
■ Features
● 3-pin intelligent power device unit: mm
● Five protective functions (over-current, over-voltage, short circuit
6.5±0.1
load, over heat, ESD) are integrated 5.3±0.1
2.3±0.1
4.35±0.1
● Acceptable both AC and DC power supply 0.5±0.1
■ Applications
1.8±0.1
7.3±0.1
● For automotive electric equipment
1.0±0.2
1.0±0.1
2.5±0.1
0.1±0.05
0.93±0.1
0.8max
Parameter Symbol Ratings Unit 0.5±0.1
0.75±0.1
Drain to Source voltage VDS 60 V
2.3±0.1
4.6±0.1
Output peak current IOP ±5 A
Output current IO −1 to 2*1 A
Input voltage VIN − 0.5 to 6 V
1: IN
Input current IIN ±10 mA 1 2 3 2: Drain
3: Source
Drain clamp energy EAS 55*2 mJ
U Type Package
1
Allowable power dissipation PD W
10*3
Operating ambient temperature Topr −40 to +85 °C
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
*1 Maximum load current, not the average current.
*2 L = 10mH, IL = 3.32A, VDD = 30V, 1pulse, TC = 25°C
*3 TC = 25°C
■ Block Diagram
1
Intelligent Power Devices (IPDs) MIP705
■ Operating condition
Parameter Symbol min typ max Unit
Operating supply voltage VDD 40 V