Power Transistors

2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type

For low-frequency power amplification Unit: mm

For TV vertical deflection output 10.0±0.2 4.2±0.2

0.7±0.1
5.5±0.2 2.7±0.2
Complementary to 2SB0940, 2S0940A

4.2±0.2
7.5±0.2
φ 3.1±0.1
■ Features

16.7±0.3
• High collector-emitter voltage (Base open) VCEO
• Large collector power dissipation PC
• Full-pack package which can be installed to the heat sink with one screw 1.4±0.1
1.3±0.2

Solder Dip
14.0±0.5

(4.0)
0.5+0.2
■ Absolute Maximum Ratings Ta = 25°C
–0.1
0.8±0.1

Parameter Symbol Rating Unit 2.54±0.3

Collector-base voltage (Emitter open) VCBO 200 V 5.08±0.5
1: Base
Collector-emitter voltage 2SD1264 VCEO 150 V 2: Collector
(Base open) 2SD1264A 180 1 2 3 3: Emitter
EIAJ: SC-67
Emitter-base voltage (Collector open) VEBO 6 V TO-220F-A1 Package
Collector current IC 2 A
Peak collector current ICP 3 A
Collector power TC = 25°C PC 30 W
dissipation 2.0
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 50 µA, IE = 0 200 V
Collector-emitter voltage 2SD1264 VCEO IC = 5 mA, IB = 0 150 V
(Base open) 2SD1264A 180
Emitter-base voltage (Collector open) VEBO IE = 500 µA, IC = 0 6 V
Base-emitter voltage VBE VCE = 10 V, IC = 400 mA 1.0 V
Collector-base cutoff current (Emitter open) ICBO VCB = 200 V, IE = 0 50 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 50 µA
Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 60 240 
hFE2 VCE = 10 V, IC = 400 mA 50
Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 1.0 V
Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q P
hFE1 60 to 140 100 to 240

Publication date: April 2003 SJD00180BED 1

2SD1264, 2SD1264A

PC  Ta IC  VCE IC  VBE
50 1.2 1.2
(1)TC=Ta TC=25˚C
(2)With a 100×100×2mm
Collector power dissipation PC (W)

Al heat sink IB=7mA 25˚C

(3)With a 50×50×2mm 1.0 1.0
40
6mA TC=100˚C –25˚C
Al heat sink

Collector current IC (A)

Collector current IC (A)

(4)Without heat sink
(PC=2W) 0.8 5mA 0.8
(1)
30
4mA
0.6 0.6

20 3mA

0.4 0.4
2mA
(2)
10
0.2 1mA 0.2
(3)
(4)
0 0 0
0 40 80 120 160 0 4 8 12 16 20 24 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I C
10 104 1 000
Collector-emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=10V VCE=5V

f=1MHz
TC=25˚C
Forward current transfer ratio hFE

Transition frequency fT (MHz)

103 100
1
TC=100˚C TC=100˚C
25˚C
2
10 10
25˚C
–25˚C

–25˚C
0.1
10 1

0.01 1 0.1
0.01 0.1 1 0.01 0.1 1 10 0.01 0.1 1 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Safe operation area Rth  t

10 103 (1)Without heat sink
Non repetitive pulse
TC=25˚C (2)With a 100×100×2mm Al heat sink
ICP
Thermal resistance Rth (°C/W)

IC t=0.5ms
102 (1)
1
Collector current IC (A)

t=5ms
t=1ms (2)
10
DC
0.1

0.01
10−1
2SD1264A
2SD1264

0.001 10−2
1 10 100 1 000 10−4 10−3 10−2 10−1 1 10 102 103 104
Collector-emitter voltage VCE (V) Time t (s)

2 SJD00180BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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2002 JUL